{"id":"https://openalex.org/W2003673696","doi":"https://doi.org/10.1016/s0168-583x(00)00547-4","title":"Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system","display_name":"Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system","publication_year":2001,"publication_date":"2001-04-01","ids":{"openalex":"https://openalex.org/W2003673696","doi":"https://doi.org/10.1016/s0168-583x(00)00547-4","mag":"2003673696"},"language":"en","primary_location":{"id":"doi:10.1016/s0168-583x(00)00547-4","doi":"https://doi.org/10.1016/s0168-583x(00)00547-4","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0168-583x(00)00547-4","pdf_url":null,"source":{"id":"https://openalex.org/S113542562","display_name":"Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms","issn_l":"0168-583X","issn":["0168-583X","1872-9584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111569927","display_name":"Takuo Hada","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takuo Hada","raw_affiliation_strings":["Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho,Toyonaka, Osaka 560-8531, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho,Toyonaka, Osaka 560-8531, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Hirotaka Miyamoto","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hirotaka Miyamoto","raw_affiliation_strings":["Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho,Toyonaka, Osaka 560-8531, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho,Toyonaka, Osaka 560-8531, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088217399","display_name":"Junichi Yanagisawa","orcid":"https://orcid.org/0000-0003-1279-0276","observed_orcids":["https://orcid.org/0000-0003-1279-0276"]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Junichi Yanagisawa","raw_affiliation_strings":["Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055940475","display_name":"Fujio Wakaya","orcid":"https://orcid.org/0000-0002-8778-2118","observed_orcids":["https://orcid.org/0000-0002-8778-2118"]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Fujio Wakaya","raw_affiliation_strings":["Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110170676","display_name":"Yoshihiko Yuba","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshihiko Yuba","raw_affiliation_strings":["Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5049910773","display_name":"Kenji Gamo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenji Gamo","raw_affiliation_strings":["Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan","institution_ids":["https://openalex.org/I98285908"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I98285908"],"apc_list":{"value":2810,"currency":"USD","value_usd":2810},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.1517934,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"175-177","issue":null,"first_page":"751","last_page":"755"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.9336000084877014,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.9336000084877014,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0364999994635582,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.013500000350177288,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-ion-implantation","display_name":"silicon ion implantation","score":0.7720000147819519},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"GaAs","score":0.6919999718666077},{"id":"https://openalex.org/keywords/carrier-activation","display_name":"carrier activation","score":0.7149999737739563},{"id":"https://openalex.org/keywords/post-annealing","display_name":"post-annealing","score":0.6140000224113464},{"id":"https://openalex.org/keywords/ion-implantation-damage","display_name":"ion implantation damage","score":0.8059999942779541},{"id":"https://openalex.org/keywords/doping-efficiency","display_name":"doping efficiency","score":0.5879999995231628}],"concepts":[{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.8150334358215332},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7003136873245239},{"id":"https://openalex.org/C2777822432","wikidata":"https://www.wikidata.org/wiki/Q216681","display_name":"In situ","level":2,"score":0.6464381814002991},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6250036954879761},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.591365396976471},{"id":"https://openalex.org/C50774322","wikidata":"https://www.wikidata.org/wiki/Q644248","display_name":"Ion beam","level":3,"score":0.5136703848838806},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.4643225073814392},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.46001243591308594},{"id":"https://openalex.org/C168834538","wikidata":"https://www.wikidata.org/wiki/Q3705329","display_name":"Beam (structure)","level":2,"score":0.4248931407928467},{"id":"https://openalex.org/C161866238","wikidata":"https://www.wikidata.org/wiki/Q258563","display_name":"Focused ion beam","level":3,"score":0.41811418533325195},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.4151044487953186},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.28266140818595886},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.23814991116523743},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.17822912335395813},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.13961389660835266},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07569774985313416},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0168-583x(00)00547-4","doi":"https://doi.org/10.1016/s0168-583x(00)00547-4","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0168-583x(00)00547-4","pdf_url":null,"source":{"id":"https://openalex.org/S113542562","display_name":"Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms","issn_l":"0168-583X","issn":["0168-583X","1872-9584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320912","display_name":"Ministry of Education, Culture, Sports, Science and Technology","ror":"https://ror.org/048rj2z13"},{"id":"https://openalex.org/F4320325282","display_name":"Murata Science Foundation","ror":"https://ror.org/04hd8bd67"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1983325386","https://openalex.org/W2008751366","https://openalex.org/W2055881008","https://openalex.org/W2063751593","https://openalex.org/W2065191013","https://openalex.org/W2069871003","https://openalex.org/W2169254316","https://openalex.org/W2987637782"],"related_works":["https://openalex.org/W2069871003","https://openalex.org/W2169254316","https://openalex.org/W1628490536","https://openalex.org/W1983325386","https://openalex.org/W2095648446","https://openalex.org/W2065065969","https://openalex.org/W2076457693","https://openalex.org/W2008751366","https://openalex.org/W2041011293","https://openalex.org/W2050707067"],"abstract_inverted_index":null,"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":2}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}