{"id":"https://openalex.org/W2003403953","doi":"https://doi.org/10.1063/1.1621458","title":"Electrical and optical properties of Fe-doped semi-insulating GaN templates","display_name":"Electrical and optical properties of Fe-doped semi-insulating GaN templates","publication_year":2003,"publication_date":"2003-10-16","ids":{"openalex":"https://openalex.org/W2003403953","doi":"https://doi.org/10.1063/1.1621458","mag":"2003403953"},"language":"en","primary_location":{"id":"doi:10.1063/1.1621458","doi":"https://doi.org/10.1063/1.1621458","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1621458","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016479284","display_name":"Alexander Y. Polyakov","orcid":"https://orcid.org/0000-0001-6898-6126","observed_orcids":["https://orcid.org/0000-0001-6898-6126"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. Y. Polyakov","raw_affiliation_strings":["Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5, Russia","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016164016","display_name":"N. B. Smirnov","orcid":"https://orcid.org/0000-0002-4993-0175","observed_orcids":["https://orcid.org/0000-0002-4993-0175"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"N. B. Smirnov","raw_affiliation_strings":["Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5, Russia","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015342153","display_name":"Anatoliy V. Govorkov","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. V. Govorkov","raw_affiliation_strings":["Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5, Russia","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085381025","display_name":"S. J. Pearton","orcid":"https://orcid.org/0000-0001-6498-1256","observed_orcids":["https://orcid.org/0000-0001-6498-1256"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. J. Pearton","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.3335,"has_fulltext":false,"cited_by_count":64,"citation_normalized_percentile":{"value":0.88077766,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"83","issue":"16","first_page":"3314","last_page":"3316"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/semi-insulating-gan","display_name":"semi-insulating GaN","score":0.9470000267028809},{"id":"https://openalex.org/keywords/fe-doping","display_name":"iron doping","score":0.8209999799728394},{"id":"https://openalex.org/keywords/gan-templates","display_name":"GaN templates","score":0.6620000004768372},{"id":"https://openalex.org/keywords/sheet-resistance","display_name":"sheet resistance","score":0.9520000219345093},{"id":"https://openalex.org/keywords/dark-conductivity","display_name":"dark conductivity","score":0.6589999794960022},{"id":"https://openalex.org/keywords/electron-traps","display_name":"electron traps","score":0.824999988079071},{"id":"https://openalex.org/keywords/fermi-level-pinning","display_name":"Fermi level pinning","score":0.8629999756813049},{"id":"https://openalex.org/keywords/activation-energy","display_name":"activation energy","score":0.7900000214576721},{"id":"https://openalex.org/keywords/photo-induced-current-transient-spectroscopy","display_name":"photo-induced current transient spectroscopy","score":0.8389999866485596},{"id":"https://openalex.org/keywords/hole-traps","display_name":"hole traps","score":0.9179999828338623}],"concepts":[{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.7367339134216309},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6805332899093628},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.6027392745018005},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5851407051086426},{"id":"https://openalex.org/C82714645","wikidata":"https://www.wikidata.org/wiki/Q438331","display_name":"Template","level":2,"score":0.561571478843689},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.4259701371192932},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3554304838180542},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.10341343283653259},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1621458","doi":"https://doi.org/10.1063/1.1621458","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1621458","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W650978195","https://openalex.org/W1976935661","https://openalex.org/W1980064327","https://openalex.org/W1985766796","https://openalex.org/W1990422195","https://openalex.org/W1993616006","https://openalex.org/W1994200928","https://openalex.org/W1997930219","https://openalex.org/W1999492881","https://openalex.org/W2020385585","https://openalex.org/W2028173815","https://openalex.org/W2035742998","https://openalex.org/W2042466094","https://openalex.org/W2043056115","https://openalex.org/W2047060911","https://openalex.org/W2080116304","https://openalex.org/W2094320220","https://openalex.org/W2315852480"],"related_works":["https://openalex.org/W2167327796","https://openalex.org/W2025643209","https://openalex.org/W1990840090","https://openalex.org/W2883586614","https://openalex.org/W2066637099","https://openalex.org/W2564071593","https://openalex.org/W2031217702","https://openalex.org/W2039689329","https://openalex.org/W2894790801","https://openalex.org/W1968252536"],"abstract_inverted_index":{"Electrical":[0],"and":[1,71,100],"optical":[2],"properties":[3],"of":[4,12,24,36,48,59,68,76,87,91],"semi-insulating":[5],"GaN":[6],"films":[7,26,70],"with":[8,16,95],"the":[9,13,25,37,46,49,54,65,69,74,85],"lower":[10],"part":[11],"film":[14],"doped":[15],"Fe":[17],"were":[18],"studied.":[19],"The":[20,33,57],"room-temperature":[21],"sheet":[22],"resistivity":[23],"was":[27,40,62,72],"found":[28],"to":[29,45],"be":[30],"2\u00d71010":[31],"\u03a9/square.":[32],"activation":[34],"energy":[35],"dark":[38],"conductivity":[39],"\u223c0.5":[41],"eV":[42,99],"which":[43],"corresponds":[44],"depth":[47],"dominant":[50],"electron":[51,93],"traps":[52,61,94,102],"pinning":[53],"Fermi":[55],"level.":[56],"concentration":[58,90],"these":[60],"highest":[63],"in":[64],"Fe-doped":[66],"portion":[67],"on":[73],"order":[75],"3\u00d71016":[77],"cm\u22123.":[78],"Photoinduced":[79],"current":[80],"transient":[81],"spectroscopy":[82],"also":[83],"showed":[84],"presence":[86],"a":[88],"high":[89],"deeper":[92],"level":[96],"at":[97,103],"EC\u22120.9":[98],"hole":[101],"EV+0.9":[104],"eV.":[105],"These":[106],"layers":[107],"look":[108],"very":[109],"promising":[110],"as":[111],"insulating":[112],"buffers":[113],"for":[114],"AlGaN/GaN":[115],"transistor":[116],"structures.":[117]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":6},{"year":2016,"cited_by_count":6},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":3}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}