{"id":"https://openalex.org/W2003285804","doi":"https://doi.org/10.1143/jjap.38.l839","title":"Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength","display_name":"Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength","publication_year":1999,"publication_date":"1999-07-01","ids":{"openalex":"https://openalex.org/W2003285804","doi":"https://doi.org/10.1143/jjap.38.l839","mag":"2003285804"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.38.l839","doi":"https://doi.org/10.1143/jjap.38.l839","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.38.l839","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113671138","display_name":"Petr G. Eliseev","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I922474255","display_name":"Tokushima University","ror":"https://ror.org/044vy1d05","country_code":"JP","type":"education","lineage":["https://openalex.org/I922474255"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Petr G. Eliseev","raw_affiliation_strings":["Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan","institution_ids":["https://openalex.org/I922474255"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000681755","display_name":"Hong\u2010Bo Sun","orcid":"https://orcid.org/0000-0003-2127-8610","observed_orcids":["https://orcid.org/0000-0003-2127-8610"]},"institutions":[{"id":"https://openalex.org/I922474255","display_name":"Tokushima University","ror":"https://ror.org/044vy1d05","country_code":"JP","type":"education","lineage":["https://openalex.org/I922474255"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hong-Bo Sun","raw_affiliation_strings":["Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan","institution_ids":["https://openalex.org/I922474255"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036426045","display_name":"Saulius Juodkazis","orcid":"https://orcid.org/0000-0003-3542-3874","observed_orcids":["https://orcid.org/0000-0003-3542-3874","https://orcid.org/0000-0003-3897-2844"]},"institutions":[{"id":"https://openalex.org/I922474255","display_name":"Tokushima University","ror":"https://ror.org/044vy1d05","country_code":"JP","type":"education","lineage":["https://openalex.org/I922474255"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Saulius Juodkazis","raw_affiliation_strings":["Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan","institution_ids":["https://openalex.org/I922474255"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112714736","display_name":"Tomoya Sugahara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I922474255","display_name":"Tokushima University","ror":"https://ror.org/044vy1d05","country_code":"JP","type":"education","lineage":["https://openalex.org/I922474255"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomoya Sugahara","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan","institution_ids":["https://openalex.org/I922474255"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003294177","display_name":"Shiro Sakai","orcid":"https://orcid.org/0000-0001-5495-3884","observed_orcids":["https://orcid.org/0000-0001-5495-3884"]},"institutions":[{"id":"https://openalex.org/I922474255","display_name":"Tokushima University","ror":"https://ror.org/044vy1d05","country_code":"JP","type":"education","lineage":["https://openalex.org/I922474255"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shiro Sakai","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan","institution_ids":["https://openalex.org/I922474255"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5068783320","display_name":"Hiroaki Misawa","orcid":"https://orcid.org/0000-0003-1070-387X","observed_orcids":["https://orcid.org/0000-0003-1070-387X"]},"institutions":[{"id":"https://openalex.org/I922474255","display_name":"Tokushima University","ror":"https://ror.org/044vy1d05","country_code":"JP","type":"education","lineage":["https://openalex.org/I922474255"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroaki Misawa","raw_affiliation_strings":["Department of Ecosystem Engineering, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Ecosystem Engineering, The University of Tokushima, 2-1 Minamijyosanjima, Tokushima 770-8506, Japan","institution_ids":["https://openalex.org/I922474255"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I922474255"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.9512,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.71344676,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"38","issue":"7B","first_page":"L839","last_page":"L839"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10732","display_name":"Laser Material Processing Techniques","score":0.9643999934196472,"subfield":{"id":"https://openalex.org/subfields/2206","display_name":"Computational Mechanics"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10732","display_name":"Laser Material Processing Techniques","score":0.9643999934196472,"subfield":{"id":"https://openalex.org/subfields/2206","display_name":"Computational Mechanics"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.03269999846816063,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10566","display_name":"Laser-Matter Interactions and Applications","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"gallium nitride","score":0.8460000157356262},{"id":"https://openalex.org/keywords/laser-induced-damage-threshold","display_name":"laser-induced damage threshold","score":0.8859999775886536},{"id":"https://openalex.org/keywords/sub-picosecond-pulses","display_name":"sub-picosecond pulses","score":0.8040000200271606},{"id":"https://openalex.org/keywords/surface-damage","display_name":"surface damage","score":0.6309999823570251},{"id":"https://openalex.org/keywords/c-plane-gan","display_name":"c-plane GaN","score":0.6309999823570251},{"id":"https://openalex.org/keywords/laser-surface-treatment","display_name":"laser surface treatment","score":0.5180000066757202},{"id":"https://openalex.org/keywords/femtosecond-pulses","display_name":"femtosecond pulses","score":0.6240000128746033}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7914422750473022},{"id":"https://openalex.org/C22078206","wikidata":"https://www.wikidata.org/wiki/Q1418023","display_name":"Fluence","level":3,"score":0.7674095630645752},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.7518887519836426},{"id":"https://openalex.org/C6260449","wikidata":"https://www.wikidata.org/wiki/Q41364","display_name":"Wavelength","level":2,"score":0.6695853471755981},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6119195222854614},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.5751660466194153},{"id":"https://openalex.org/C55005982","wikidata":"https://www.wikidata.org/wiki/Q3902709","display_name":"Picosecond","level":3,"score":0.5693167448043823},{"id":"https://openalex.org/C2778902805","wikidata":"https://www.wikidata.org/wiki/Q322177","display_name":"Ablation","level":2,"score":0.4754756987094879},{"id":"https://openalex.org/C2779188808","wikidata":"https://www.wikidata.org/wiki/Q1806547","display_name":"Laser ablation","level":3,"score":0.44912388920783997},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.43226489424705505},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C146978453","wikidata":"https://www.wikidata.org/wiki/Q3798668","display_name":"Aerospace engineering","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.38.l839","doi":"https://doi.org/10.1143/jjap.38.l839","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.38.l839","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W152419500","https://openalex.org/W1977179971","https://openalex.org/W1983771863","https://openalex.org/W2011493114","https://openalex.org/W2012054605","https://openalex.org/W2037639094","https://openalex.org/W2043625162","https://openalex.org/W2068244588","https://openalex.org/W2083205293","https://openalex.org/W4232274858"],"related_works":["https://openalex.org/W1681082570","https://openalex.org/W6945952969","https://openalex.org/W2088089617","https://openalex.org/W2023183717","https://openalex.org/W1963900507","https://openalex.org/W2003169740","https://openalex.org/W2048752918","https://openalex.org/W2040075401","https://openalex.org/W2015255308","https://openalex.org/W2011603703"],"abstract_inverted_index":{"The":[0,30,41],"laser-induced":[1],"damage":[2,32,46],"of":[3,17,27,56,69,78],"epitaxially":[4],"grown":[5],"GaN":[6,74],"semiconductor":[7],"material":[8],"is":[9,47,61],"investigated":[10,34],"for":[11,44,53,63],"the":[12,18,25,67,73],"first":[13],"time":[14],"by":[15,20,35,66],"illumination":[16],"c-plane":[19],"sub-picosecond":[21],"laser":[22],"pulses":[23],"at":[24],"wavelength":[26],"400":[28],"nm.":[29],"surface":[31,75],"was":[33],"optical":[36],"and":[37],"atomic":[38],"force":[39],"microscopies.":[40],"threshold":[42],"fluence":[43],"ablation":[45],"determined":[48],"to":[49,76],"be":[50],"\u223c5.4":[51],"J/cm2":[52],"pulse":[54],"width":[55],"150":[57],"fs.":[58],"An":[59],"application":[60],"demonstrated":[62],"laser-beam":[64],"processing":[65],"formation":[68],"clean":[70],"dips":[71],"on":[72],"depths":[77],"240":[79],"nm":[80],"in":[81],"a":[82],"single":[83],"shot.":[84]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}