{"id":"https://openalex.org/W2003275680","doi":"https://doi.org/10.1109/drc.2006.305109","title":"FinFET Performance Enhancement with Tensile Metal Gates and Strained Silicon on Insulator (sSOI) Substrate","display_name":"FinFET Performance Enhancement with Tensile Metal Gates and Strained Silicon on Insulator (sSOI) Substrate","publication_year":2006,"publication_date":"2006-06-01","ids":{"openalex":"https://openalex.org/W2003275680","doi":"https://doi.org/10.1109/drc.2006.305109","mag":"2003275680"},"language":"en","primary_location":{"id":"doi:10.1109/drc.2006.305109","doi":"https://doi.org/10.1109/drc.2006.305109","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2006.305109","pdf_url":null,"source":{"id":"https://openalex.org/S4210174617","display_name":"Conference digest","issn_l":"1548-3770","issn":["1548-3770","2640-6853"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2006 64th Device Research Conference","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5112776036","display_name":"Weize W. Xiong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Weize Xiong","raw_affiliation_strings":["Texas Instruments, Inc., Dallas, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments, Inc., Dallas, TX, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111896916","display_name":"Kyoungsub Shin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kyoungsub Shin","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004008673","display_name":"C. Rinn Cleavelin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. Cleavelin","raw_affiliation_strings":["Texas Instruments, Inc., Dallas, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments, Inc., Dallas, TX, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042204844","display_name":"T. Schulz","orcid":"https://orcid.org/0000-0002-0298-976X","observed_orcids":["https://orcid.org/0000-0002-0298-976X"]},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Thomas Schulz","raw_affiliation_strings":["Infineon Technologies, Neubiberg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030802294","display_name":"Klaus Schruefer","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Klaus Schruefer","raw_affiliation_strings":["Infineon Technologies, Neubiberg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056863354","display_name":"Ian Cayrefourcq","orcid":"https://orcid.org/0000-0002-4040-6019","observed_orcids":["https://orcid.org/0000-0002-4040-6019"]},"institutions":[{"id":"https://openalex.org/I108523894","display_name":"Soitec (France)","ror":"https://ror.org/00s730510","country_code":"FR","type":"company","lineage":["https://openalex.org/I108523894"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"I. Cayrefourcq","raw_affiliation_strings":["Parc Technologique des Fontaines, SOITEC S.A., Bernin, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Parc Technologique des Fontaines, SOITEC S.A., Bernin, France","institution_ids":["https://openalex.org/I108523894"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006795398","display_name":"Mark A. Kennard","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I108523894","display_name":"Soitec (France)","ror":"https://ror.org/00s730510","country_code":"FR","type":"company","lineage":["https://openalex.org/I108523894"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"M. Kennard","raw_affiliation_strings":["Parc Technologique des Fontaines, SOITEC S.A., Bernin, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Parc Technologique des Fontaines, SOITEC S.A., Bernin, France","institution_ids":["https://openalex.org/I108523894"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031918909","display_name":"C. Mazur\u00e9-Espejo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I108523894","display_name":"Soitec (France)","ror":"https://ror.org/00s730510","country_code":"FR","type":"company","lineage":["https://openalex.org/I108523894"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Mazure","raw_affiliation_strings":["Parc Technologique des Fontaines, SOITEC S.A., Bernin, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Parc Technologique des Fontaines, SOITEC S.A., Bernin, France","institution_ids":["https://openalex.org/I108523894"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006074447","display_name":"Paul Patruno","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I108523894","display_name":"Soitec (France)","ror":"https://ror.org/00s730510","country_code":"FR","type":"company","lineage":["https://openalex.org/I108523894"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Paul Patruno","raw_affiliation_strings":["Parc Technologique des Fontaines, SOITEC S.A., Bernin, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Parc Technologique des Fontaines, SOITEC S.A., Bernin, France","institution_ids":["https://openalex.org/I108523894"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5039334041","display_name":"Tsu\u2010Jae King Liu","orcid":"https://orcid.org/0000-0002-1221-2540","observed_orcids":["https://orcid.org/0000-0002-1221-2540"]},"institutions":[{"id":"https://openalex.org/I4210088951","display_name":"Synopsys (United States)","ror":"https://ror.org/013by2m91","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088951"]},{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Tsu-jae Liu","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","Synopsys, Inc., Mountain View, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]},{"raw_affiliation_string":"Synopsys, Inc., Mountain View, CA, USA","institution_ids":["https://openalex.org/I4210088951"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":4.2202,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.94543273,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"61","issue":null,"first_page":"39","last_page":"40"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.986299991607666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.986299991607666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.009999999776482582,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/finfet","display_name":"FinFET","score":0.9950000047683716},{"id":"https://openalex.org/keywords/tensile-strain","display_name":"tensile strain","score":0.8040000200271606},{"id":"https://openalex.org/keywords/metal-gate","display_name":"metal gate","score":0.6919999718666077},{"id":"https://openalex.org/keywords/strained-silicon-on-insulator","display_name":"strained silicon-on-insulator","score":0.9139999747276306},{"id":"https://openalex.org/keywords/device-performance-improvement","display_name":"device performance enhancement","score":0.7260000109672546},{"id":"https://openalex.org/keywords/strain-engineering","display_name":"strain engineering","score":0.5590000152587891}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7645118832588196},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6794886589050293},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6073113679885864},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5809147357940674},{"id":"https://openalex.org/C192245399","wikidata":"https://www.wikidata.org/wiki/Q772250","display_name":"Strained silicon","level":5,"score":0.5597131252288818},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5557693839073181},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.4961772859096527},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.4685227572917938},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24633270502090454},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.18176886439323425},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.16240081191062927},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10088717937469482},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.0725877583026886},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06777864694595337},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc.2006.305109","doi":"https://doi.org/10.1109/drc.2006.305109","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2006.305109","pdf_url":null,"source":{"id":"https://openalex.org/S4210174617","display_name":"Conference digest","issn_l":"1548-3770","issn":["1548-3770","2640-6853"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2006 64th Device Research Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W2139424966"],"related_works":["https://openalex.org/W2788359876","https://openalex.org/W2784624957","https://openalex.org/W2617048030","https://openalex.org/W2519585120","https://openalex.org/W2597676495","https://openalex.org/W2531480637","https://openalex.org/W651999577","https://openalex.org/W2467418422","https://openalex.org/W2414310282","https://openalex.org/W3065449127"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2016-06-24T00:00:00"}