{"id":"https://openalex.org/W2003273069","doi":"https://doi.org/10.1016/j.apsusc.2008.02.184","title":"Atomically controlled surfaces with step and terrace of \u03b2-Ga2O3 single crystal substrates for thin film growth","display_name":"Atomically controlled surfaces with step and terrace of \u03b2-Ga2O3 single crystal substrates for thin film growth","publication_year":2008,"publication_date":"2008-03-19","ids":{"openalex":"https://openalex.org/W2003273069","doi":"https://doi.org/10.1016/j.apsusc.2008.02.184","mag":"2003273069"},"language":"en","primary_location":{"id":"doi:10.1016/j.apsusc.2008.02.184","doi":"https://doi.org/10.1016/j.apsusc.2008.02.184","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.apsusc.2008.02.184","pdf_url":null,"source":{"id":"https://openalex.org/S42323631","display_name":"Applied Surface Science","issn_l":"0169-4332","issn":["0169-4332","1873-5584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109280563","display_name":"Shigeo Ohira","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405274867","display_name":"Nippon Light Metal Co., Ltd. (Japan)","ror":"https://ror.org/02h7b0x59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405274867"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Shigeo Ohira","raw_affiliation_strings":["Nippon Light Metal Co. Ltd., 1-34-1 Kambara, Shimuzu-ku, Shizuoka 421-3291, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nippon Light Metal Co. Ltd., 1-34-1 Kambara, Shimuzu-ku, Shizuoka 421-3291, Japan","institution_ids":["https://openalex.org/I4405274867"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041609033","display_name":"Naoki Arai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405274867","display_name":"Nippon Light Metal Co., Ltd. (Japan)","ror":"https://ror.org/02h7b0x59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405274867"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Naoki Arai","raw_affiliation_strings":["Nippon Light Metal Co. Ltd., 1-34-1 Kambara, Shimuzu-ku, Shizuoka 421-3291, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nippon Light Metal Co. Ltd., 1-34-1 Kambara, Shimuzu-ku, Shizuoka 421-3291, Japan","institution_ids":["https://openalex.org/I4405274867"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058984609","display_name":"Takayoshi Oshima","orcid":"https://orcid.org/0000-0001-8550-9735","observed_orcids":["https://orcid.org/0000-0001-8550-9735"]},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takayoshi Oshima","raw_affiliation_strings":["Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062647657","display_name":"Shiz\u03c5o Fujita","orcid":"https://orcid.org/0000-0001-6384-6693","observed_orcids":["https://orcid.org/0000-0001-6384-6693","https://orcid.org/0000-0001-6962-8777"]},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shizuo Fujita","raw_affiliation_strings":["International Innovation Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"International Innovation Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan","institution_ids":["https://openalex.org/I22299242"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5109280563"],"corresponding_institution_ids":["https://openalex.org/I4405274867"],"apc_list":{"value":3930,"currency":"USD","value_usd":3930},"apc_paid":null,"fwci":0.7413,"has_fulltext":false,"cited_by_count":50,"citation_normalized_percentile":{"value":0.68689784,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"254","issue":"23","first_page":"7838","last_page":"7842"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11301","display_name":"Advanced Surface Polishing Techniques","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2209","display_name":"Industrial and Manufacturing Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/beta-ga2o3","display_name":"\u03b2-Ga2O3","score":0.984000027179718},{"id":"https://openalex.org/keywords/gallium-oxide-single-crystals","display_name":"gallium oxide single crystals","score":0.9110000133514404},{"id":"https://openalex.org/keywords/chemical-mechanical-polishing","display_name":"chemical mechanical polishing","score":0.8270000219345093},{"id":"https://openalex.org/keywords/oxygen-annealing","display_name":"oxygen annealing","score":0.7919999957084656},{"id":"https://openalex.org/keywords/atomically-flat-surfaces","display_name":"atomically flat surfaces","score":0.7139999866485596},{"id":"https://openalex.org/keywords/epitaxial-thin-film-growth","display_name":"epitaxial thin film growth","score":0.8579999804496765},{"id":"https://openalex.org/keywords/floating-zone-growth","display_name":"floating zone crystal growth","score":0.6959999799728394},{"id":"https://openalex.org/keywords/surface-misorientation","display_name":"surface misorientation","score":0.4699999988079071},{"id":"https://openalex.org/keywords/reflection-high-energy-electron-diffraction","display_name":"reflection high-energy electron diffraction","score":0.7570000290870667}],"concepts":[{"id":"https://openalex.org/C2778117898","wikidata":"https://www.wikidata.org/wiki/Q4388710","display_name":"Misorientation","level":4,"score":0.7636574506759644},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.727041482925415},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.684307873249054},{"id":"https://openalex.org/C138113353","wikidata":"https://www.wikidata.org/wiki/Q611639","display_name":"Polishing","level":2,"score":0.6262989640235901},{"id":"https://openalex.org/C2776638177","wikidata":"https://www.wikidata.org/wiki/Q838625","display_name":"Terrace (agriculture)","level":2,"score":0.6025508642196655},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.5632212162017822},{"id":"https://openalex.org/C77557913","wikidata":"https://www.wikidata.org/wiki/Q864822","display_name":"Electron diffraction","level":3,"score":0.5351650714874268},{"id":"https://openalex.org/C73922627","wikidata":"https://www.wikidata.org/wiki/Q754943","display_name":"Single crystal","level":2,"score":0.5227727293968201},{"id":"https://openalex.org/C102951782","wikidata":"https://www.wikidata.org/wiki/Q49295","display_name":"Atomic force microscopy","level":2,"score":0.4712503254413605},{"id":"https://openalex.org/C2778978812","wikidata":"https://www.wikidata.org/wiki/Q908748","display_name":"Low-energy electron microscopy","level":3,"score":0.4502699077129364},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.44957223534584045},{"id":"https://openalex.org/C200096950","wikidata":"https://www.wikidata.org/wiki/Q455003","display_name":"Reflection high-energy electron diffraction","level":4,"score":0.4460771083831787},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.4425254464149475},{"id":"https://openalex.org/C180088628","wikidata":"https://www.wikidata.org/wiki/Q1069404","display_name":"Chemical-mechanical planarization","level":3,"score":0.4265438914299011},{"id":"https://openalex.org/C100083437","wikidata":"https://www.wikidata.org/wiki/Q905977","display_name":"Low-energy electron diffraction","level":4,"score":0.4146444499492645},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3575778305530548},{"id":"https://openalex.org/C93877712","wikidata":"https://www.wikidata.org/wiki/Q132560","display_name":"Electron microscope","level":2,"score":0.2836618423461914},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.27499282360076904},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.20563563704490662},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.16121932864189148},{"id":"https://openalex.org/C87976508","wikidata":"https://www.wikidata.org/wiki/Q1498213","display_name":"Microstructure","level":2,"score":0.10076749324798584},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.07790663838386536},{"id":"https://openalex.org/C47908070","wikidata":"https://www.wikidata.org/wiki/Q900515","display_name":"Grain boundary","level":3,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C95457728","wikidata":"https://www.wikidata.org/wiki/Q309","display_name":"History","level":0,"score":0.0},{"id":"https://openalex.org/C166957645","wikidata":"https://www.wikidata.org/wiki/Q23498","display_name":"Archaeology","level":1,"score":0.0}],"mesh":[],"locations_count":5,"locations":[{"id":"doi:10.1016/j.apsusc.2008.02.184","doi":"https://doi.org/10.1016/j.apsusc.2008.02.184","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.apsusc.2008.02.184","pdf_url":null,"source":{"id":"https://openalex.org/S42323631","display_name":"Applied Surface Science","issn_l":"0169-4332","issn":["0169-4332","1873-5584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science","raw_type":"journal-article"},{"id":"pmh:oai:irdb.nii.ac.jp:00897:0004021444","doi":null,"is_oa":false,"landing_page_url":"http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100604158","pdf_url":null,"source":{"id":"https://openalex.org/S7407056385","display_name":"Institutional Repositories DataBase (IRDB)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I184597095","host_organization_name":"National Institute of Informatics","host_organization_lineage":["https://openalex.org/I184597095"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Appl. Surf. Sci.","raw_type":"journal article"},{"id":"pmh:oai:irdb.nii.ac.jp:01221:0000046287","doi":null,"is_oa":false,"landing_page_url":"http://hdl.handle.net/2433/78677","pdf_url":null,"source":{"id":"https://openalex.org/S7407056385","display_name":"Institutional Repositories DataBase (IRDB)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I184597095","host_organization_name":"National Institute of Informatics","host_organization_lineage":["https://openalex.org/I184597095"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"APPLIED SURFACE SCIENCE","raw_type":"journal article"},{"id":"pmh:oai:repository.kulib.kyoto-u.ac.jp:2433/78677","doi":null,"is_oa":false,"landing_page_url":"http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000259172600071&DestApp=WOS","pdf_url":null,"source":{"id":"https://openalex.org/S4306401454","display_name":"Kyoto University Research Information Repository (Kyoto University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I22299242","host_organization_name":"Kyoto University","host_organization_lineage":["https://openalex.org/I22299242"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Journal Article"},{"id":"pmh:oai:t2r2.star.titech.ac.jp:50103268","doi":null,"is_oa":false,"landing_page_url":"http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100604158","pdf_url":null,"source":{"id":"https://openalex.org/S4377196385","display_name":"Tokyo Tech Research Repository (Tokyo Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I114531698","host_organization_name":"Tokyo Institute of Technology","host_organization_lineage":["https://openalex.org/I114531698"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1674257804","https://openalex.org/W1992631092","https://openalex.org/W2005210574","https://openalex.org/W2009776525","https://openalex.org/W2067656873","https://openalex.org/W2070204344","https://openalex.org/W2070946896","https://openalex.org/W2083679784","https://openalex.org/W2086882703","https://openalex.org/W2109732024"],"related_works":["https://openalex.org/W2177770936","https://openalex.org/W7212234647","https://openalex.org/W7170162336","https://openalex.org/W3154623064","https://openalex.org/W7165465412","https://openalex.org/W3093416118","https://openalex.org/W2032582883","https://openalex.org/W2064812855","https://openalex.org/W2904983254","https://openalex.org/W3116898399"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":6},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":8},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}