{"id":"https://openalex.org/W2003191330","doi":"https://doi.org/10.1051/epjap:2001146","title":"Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene","display_name":"Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene","publication_year":2001,"publication_date":"2001-05-01","ids":{"openalex":"https://openalex.org/W2003191330","doi":"https://doi.org/10.1051/epjap:2001146","mag":"2003191330"},"language":"en","primary_location":{"id":"doi:10.1051/epjap:2001146","doi":"https://doi.org/10.1051/epjap:2001146","is_oa":false,"landing_page_url":"https://doi.org/10.1051/epjap:2001146","pdf_url":null,"source":{"id":"https://openalex.org/S201767027","display_name":"The European Physical Journal Applied Physics","issn_l":"1286-0042","issn":["1286-0042","1286-0050"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-40","russia-white-list-3","vabb-shw"],"host_organization":"https://openalex.org/P4310319748","host_organization_name":"EDP Sciences","host_organization_lineage":["https://openalex.org/P4310319748","https://openalex.org/P4310319982"],"host_organization_lineage_names":["EDP Sciences","Science Press"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"The European Physical Journal Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5026954942","display_name":"Ramzi Bourguiga","orcid":"https://orcid.org/0009-0000-7246-8700","observed_orcids":["https://orcid.org/0009-0000-7246-8700"]},"institutions":[{"id":"https://openalex.org/I108714496","display_name":"Tunis University","ror":"https://ror.org/02q1spa57","country_code":"TN","type":"education","lineage":["https://openalex.org/I108714496"]}],"countries":["TN"],"is_corresponding":false,"raw_author_name":"R. Bourguiga","raw_affiliation_strings":["Facult\u00e9 des Sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia","Laboratoire de Physique de la Mati\u00e8re Condens\u00e9e, Groupe Mat\u00e9riaux Mol\u00e9culaires et Polym\u00e8res, Campus Universitaire, 1060 Tunis, Tunisia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Facult\u00e9 des Sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia","institution_ids":[]},{"raw_affiliation_string":"Laboratoire de Physique de la Mati\u00e8re Condens\u00e9e, Groupe Mat\u00e9riaux Mol\u00e9culaires et Polym\u00e8res, Campus Universitaire, 1060 Tunis, Tunisia","institution_ids":["https://openalex.org/I108714496"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110176262","display_name":"Fran\u00e7is Garnier","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"F. Garnier","raw_affiliation_strings":["Laboratoire des Mat\u00e9riaux Mol\u00e9culaires, CNRS, 2 rue Henry-Dunant, 94320 Thiais, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire des Mat\u00e9riaux Mol\u00e9culaires, CNRS, 2 rue Henry-Dunant, 94320 Thiais, France","institution_ids":["https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064881341","display_name":"Gilles Horowitz","orcid":"https://orcid.org/0000-0002-3222-1428","observed_orcids":["https://orcid.org/0000-0002-3222-1428"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"G. Horowitz","raw_affiliation_strings":["Laboratoire des Mat\u00e9riaux Mol\u00e9culaires, CNRS, 2 rue Henry-Dunant, 94320 Thiais, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire des Mat\u00e9riaux Mol\u00e9culaires, CNRS, 2 rue Henry-Dunant, 94320 Thiais, France","institution_ids":["https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035815724","display_name":"Riadh Hajlaoui","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"R. Hajlaoui","raw_affiliation_strings":["Laboratoire des Mat\u00e9riaux Mol\u00e9culaires, CNRS, 2 rue Henry-Dunant, 94320 Thiais, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire des Mat\u00e9riaux Mol\u00e9culaires, CNRS, 2 rue Henry-Dunant, 94320 Thiais, France","institution_ids":["https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110041972","display_name":"P Delannoy","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4387154366","display_name":"Universit\u00e9 Paris Diderot","ror":"https://ror.org/02n7qrg46","country_code":"FR","type":"education","lineage":["https://openalex.org/I204730241","https://openalex.org/I4387154366"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Delannoy","raw_affiliation_strings":["Groupe de Physique des Solides, Universit\u00e9 Paris 7, Denis Diderot, 75251 Paris Cedex 05, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Groupe de Physique des Solides, Universit\u00e9 Paris 7, Denis Diderot, 75251 Paris Cedex 05, France","institution_ids":["https://openalex.org/I4387154366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084241549","display_name":"Mohsen Elain Hajlaoui","orcid":"https://orcid.org/0000-0002-4219-6166","observed_orcids":["https://orcid.org/0000-0002-4219-6166"]},"institutions":[{"id":"https://openalex.org/I108714496","display_name":"Tunis University","ror":"https://ror.org/02q1spa57","country_code":"TN","type":"education","lineage":["https://openalex.org/I108714496"]}],"countries":["TN"],"is_corresponding":false,"raw_author_name":"M. Hajlaoui","raw_affiliation_strings":["Laboratoire de Physique de la Mati\u00e8re Condens\u00e9e, Groupe Mat\u00e9riaux Mol\u00e9culaires et Polym\u00e8res, Campus Universitaire, 1060 Tunis, Tunisia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire de Physique de la Mati\u00e8re Condens\u00e9e, Groupe Mat\u00e9riaux Mol\u00e9culaires et Polym\u00e8res, Campus Universitaire, 1060 Tunis, Tunisia","institution_ids":["https://openalex.org/I108714496"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111796899","display_name":"Habib Bouchriha","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I108714496","display_name":"Tunis University","ror":"https://ror.org/02q1spa57","country_code":"TN","type":"education","lineage":["https://openalex.org/I108714496"]}],"countries":["TN"],"is_corresponding":false,"raw_author_name":"H. Bouchriha","raw_affiliation_strings":["Laboratoire de Physique de la Mati\u00e8re Condens\u00e9e, Groupe Mat\u00e9riaux Mol\u00e9culaires et Polym\u00e8res, Campus Universitaire, 1060 Tunis, Tunisia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire de Physique de la Mati\u00e8re Condens\u00e9e, Groupe Mat\u00e9riaux Mol\u00e9culaires et Polym\u00e8res, Campus Universitaire, 1060 Tunis, Tunisia","institution_ids":["https://openalex.org/I108714496"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1650,"currency":"EUR","value_usd":1865},"apc_paid":null,"fwci":0.8366,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.75567315,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"14","issue":"2","first_page":"121","last_page":"125"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.000699999975040555,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10660","display_name":"Conducting polymers and applications","score":0.000699999975040555,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/organic-thin-film-transistors","display_name":"organic thin-film transistors","score":0.9950000047683716},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.8410000205039978},{"id":"https://openalex.org/keywords/accumulation-layer","display_name":"accumulation layer","score":0.6700000166893005},{"id":"https://openalex.org/keywords/metal-insulator-semiconductor-field-effect-transistor","display_name":"MISFET","score":0.8309999704360962},{"id":"https://openalex.org/keywords/trap-distribution","display_name":"trap distribution","score":0.7889999747276306},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.824999988079071},{"id":"https://openalex.org/keywords/trap-density","display_name":"trap density","score":0.8949999809265137},{"id":"https://openalex.org/keywords/analytical-device-model","display_name":"analytical device model","score":0.7889999747276306}],"concepts":[{"id":"https://openalex.org/C2778673556","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MISFET","level":5,"score":0.9209952354431152},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6796267628669739},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.6548789739608765},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.649969220161438},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6115944981575012},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5619288086891174},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.48061007261276245},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.47403717041015625},{"id":"https://openalex.org/C94003879","wikidata":"https://www.wikidata.org/wiki/Q1933714","display_name":"Organic semiconductor","level":2,"score":0.4657123386859894},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.46077650785446167},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.30820244550704956},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23249408602714539},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1760386824607849},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.11064961552619934},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1051/epjap:2001146","doi":"https://doi.org/10.1051/epjap:2001146","is_oa":false,"landing_page_url":"https://doi.org/10.1051/epjap:2001146","pdf_url":null,"source":{"id":"https://openalex.org/S201767027","display_name":"The European Physical Journal Applied Physics","issn_l":"1286-0042","issn":["1286-0042","1286-0050"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-40","russia-white-list-3","vabb-shw"],"host_organization":"https://openalex.org/P4310319748","host_organization_name":"EDP Sciences","host_organization_lineage":["https://openalex.org/P4310319748","https://openalex.org/P4310319982"],"host_organization_lineage_names":["EDP Sciences","Science Press"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"The European Physical Journal Applied Physics","raw_type":"journal-article"},{"id":"pmh:oai:edpsciences.org:dkey/10.1051/epjap:2001146","doi":null,"is_oa":false,"landing_page_url":"https://www.epjap.org/10.1051/epjap:2001146/pdf","pdf_url":"https://www.epjap.org/10.1051/epjap:2001146/pdf","source":{"id":"https://openalex.org/S4306400744","display_name":"Springer Link (Chiba Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I8488066","host_organization_name":"Chiba Institute of Technology","host_organization_lineage":["https://openalex.org/I8488066"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"https://doi.org/10.1051/epjap:2001146","raw_type":"Text"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1982446111","https://openalex.org/W1989941544","https://openalex.org/W2003708077","https://openalex.org/W2014267240","https://openalex.org/W2015240500","https://openalex.org/W2019391322","https://openalex.org/W2043777431","https://openalex.org/W2048394610","https://openalex.org/W2050997256","https://openalex.org/W2052005018","https://openalex.org/W2058191604","https://openalex.org/W2066145650","https://openalex.org/W2066150364","https://openalex.org/W2082417057","https://openalex.org/W2082657800","https://openalex.org/W2103628601"],"related_works":["https://openalex.org/W2003708077","https://openalex.org/W7100510134","https://openalex.org/W2077887759","https://openalex.org/W1527074785","https://openalex.org/W2007614162","https://openalex.org/W2060348631","https://openalex.org/W2122172579","https://openalex.org/W3175500052","https://openalex.org/W2044598977","https://openalex.org/W2122814884"],"abstract_inverted_index":{"Metal-Insulator-Semiconductor":[0],"Field-Effect-Transistors":[1],"based":[2,37],"on":[3,38],"Dihexyl-":[4],"quaterthiophene":[5],"(DH4T),":[6],"has":[7,58],"been":[8,59],"realized.":[9],"Unlike":[10],"conventional":[11],"MISFET,":[12],"these":[13],"devices":[14],"work":[15],"through":[16],"the":[17,24,32,51,55,68,70,75],"modulation":[18],"of":[19,34,72,78],"an":[20],"accumulation":[21],"layer":[22],"at":[23],"semiconductor-insulator":[25],"interface.":[26],"An":[27],"analytical":[28],"model":[29],"that":[30],"describes":[31],"operation":[33],"organic":[35],"thin-film-transistors":[36],"a":[39,44],"simple":[40],"trap":[41,47],"distribution,":[42],"with":[43],"single":[45],"shallow":[46],"level":[48,77],"located":[49],"between":[50],"valence-band":[52],"edge":[53],"and":[54,74],"Fermi":[56],"level,":[57],"used":[60],"to":[61],"determine":[62],"some":[63],"microscopic":[64],"parameters":[65],"such":[66],"as":[67],"mobility,":[69],"density":[71],"traps":[73],"corresponding":[76],"traps.":[79]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":3}],"updated_date":"2026-10-22T18:32:59.640997","created_date":"2016-06-24T00:00:00"}