{"id":"https://openalex.org/W2003015355","doi":"https://doi.org/10.1063/1.2204649","title":"Electrical observations of filamentary conductions for the resistive memory switching in NiO films","display_name":"Electrical observations of filamentary conductions for the resistive memory switching in NiO films","publication_year":2006,"publication_date":"2006-05-12","ids":{"openalex":"https://openalex.org/W2003015355","doi":"https://doi.org/10.1063/1.2204649","mag":"2003015355"},"language":"en","primary_location":{"id":"doi:10.1063/1.2204649","doi":"https://doi.org/10.1063/1.2204649","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2204649","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072740246","display_name":"Dongso Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4399598381","display_name":"Samsung Advanced Institute of Technology (South Korea)","ror":"https://ror.org/04axnyp10","country_code":null,"type":"company","lineage":["https://openalex.org/I4399598381"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"D. C. Kim","raw_affiliation_strings":["Samsung Advanced Institute of Technology , Suwon 440-600, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Advanced Institute of Technology , Suwon 440-600, Korea","institution_ids":["https://openalex.org/I4399598381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077992055","display_name":"Sunae Seo","orcid":"https://orcid.org/0000-0003-2717-4767","observed_orcids":["https://orcid.org/0000-0003-2717-4767"]},"institutions":[{"id":"https://openalex.org/I4399598381","display_name":"Samsung Advanced Institute of Technology (South Korea)","ror":"https://ror.org/04axnyp10","country_code":null,"type":"company","lineage":["https://openalex.org/I4399598381"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. Seo","raw_affiliation_strings":["Samsung Advanced Institute of Technology , Suwon 440-600, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Advanced Institute of Technology , Suwon 440-600, Korea","institution_ids":["https://openalex.org/I4399598381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074573707","display_name":"Seung\u2010Eon Ahn","orcid":"https://orcid.org/0000-0001-7434-5579","observed_orcids":["https://orcid.org/0000-0001-7434-5579"]},"institutions":[{"id":"https://openalex.org/I4399598381","display_name":"Samsung Advanced Institute of Technology (South Korea)","ror":"https://ror.org/04axnyp10","country_code":null,"type":"company","lineage":["https://openalex.org/I4399598381"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. E. Ahn","raw_affiliation_strings":["Samsung Advanced Institute of Technology , Suwon 440-600, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Advanced Institute of Technology , Suwon 440-600, Korea","institution_ids":["https://openalex.org/I4399598381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068838007","display_name":"Dongseok Suh","orcid":"https://orcid.org/0000-0002-0392-3391","observed_orcids":["https://orcid.org/0000-0002-0392-3391"]},"institutions":[{"id":"https://openalex.org/I4399598381","display_name":"Samsung Advanced Institute of Technology (South Korea)","ror":"https://ror.org/04axnyp10","country_code":null,"type":"company","lineage":["https://openalex.org/I4399598381"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"D.-S. Suh","raw_affiliation_strings":["Samsung Advanced Institute of Technology , Suwon 440-600, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Advanced Institute of Technology , Suwon 440-600, Korea","institution_ids":["https://openalex.org/I4399598381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101871629","display_name":"Myoung\u2010Jae Lee","orcid":"https://orcid.org/0000-0003-2626-0460","observed_orcids":["https://orcid.org/0000-0003-2626-0460"]},"institutions":[{"id":"https://openalex.org/I4399598381","display_name":"Samsung Advanced Institute of Technology (South Korea)","ror":"https://ror.org/04axnyp10","country_code":null,"type":"company","lineage":["https://openalex.org/I4399598381"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"M. J. Lee","raw_affiliation_strings":["Samsung Advanced Institute of Technology , Suwon 440-600, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Advanced Institute of Technology , Suwon 440-600, Korea","institution_ids":["https://openalex.org/I4399598381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038967792","display_name":"Bae Ho Park","orcid":"https://orcid.org/0000-0003-0928-329X","observed_orcids":["https://orcid.org/0000-0003-0928-329X"]},"institutions":[{"id":"https://openalex.org/I4399598381","display_name":"Samsung Advanced Institute of Technology (South Korea)","ror":"https://ror.org/04axnyp10","country_code":null,"type":"company","lineage":["https://openalex.org/I4399598381"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"B.-H. Park","raw_affiliation_strings":["Samsung Advanced Institute of Technology , Suwon 440-600, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Advanced Institute of Technology , Suwon 440-600, Korea","institution_ids":["https://openalex.org/I4399598381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102757641","display_name":"In Kyeong Yoo","orcid":"https://orcid.org/0000-0001-9011-0200","observed_orcids":["https://orcid.org/0000-0001-9011-0200"]},"institutions":[{"id":"https://openalex.org/I4399598381","display_name":"Samsung Advanced Institute of Technology (South Korea)","ror":"https://ror.org/04axnyp10","country_code":null,"type":"company","lineage":["https://openalex.org/I4399598381"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"I. K. Yoo","raw_affiliation_strings":["Samsung Advanced Institute of Technology , Suwon 440-600, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Advanced Institute of Technology , Suwon 440-600, Korea","institution_ids":["https://openalex.org/I4399598381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103138808","display_name":"In-Hwan Baek","orcid":"https://orcid.org/0000-0002-7201-3914","observed_orcids":["https://orcid.org/0000-0002-7201-3914"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"I. G. Baek","raw_affiliation_strings":["Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019034637","display_name":"H.-J. Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"H.-J. Kim","raw_affiliation_strings":["Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":null,"display_name":"E. K. Yim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"E. K. Yim","raw_affiliation_strings":["Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065144399","display_name":"J. E. Lee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. E. Lee","raw_affiliation_strings":["Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032519899","display_name":"S. O. Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. O. Park","raw_affiliation_strings":["Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073205844","display_name":"H. S. Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"H. S. Kim","raw_affiliation_strings":["Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026468337","display_name":"U\u2010In Chung","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"U-In Chung","raw_affiliation_strings":["Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113102334","display_name":"J.T. Moon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. T. Moon","raw_affiliation_strings":["Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109194130","display_name":"B.-I. Ryu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"B. I. Ryu","raw_affiliation_strings":["Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Co. Ltd. Process Development Team, Semiconductor R & D Center, , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyeonggi-Do 449-711, Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":39.1058,"has_fulltext":false,"cited_by_count":525,"citation_normalized_percentile":{"value":0.99920627,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":93,"max":100},"biblio":{"volume":"88","issue":"20","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-switching","display_name":"resistive switching","score":0.7269999980926514},{"id":"https://openalex.org/keywords/nio-thin-films","display_name":"NiO thin films","score":0.8080000281333923},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"resistive random access memory","score":0.6779999732971191},{"id":"https://openalex.org/keywords/filamentary-conduction","display_name":"filamentary conduction","score":0.9629999995231628},{"id":"https://openalex.org/keywords/resistance-fluctuations","display_name":"resistance fluctuations","score":0.953000009059906},{"id":"https://openalex.org/keywords/joule-heating","display_name":"Joule heating","score":0.9629999995231628}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.8162788152694702},{"id":"https://openalex.org/C97292510","wikidata":"https://www.wikidata.org/wiki/Q2304620","display_name":"Bistability","level":2,"score":0.8111648559570312},{"id":"https://openalex.org/C74575197","wikidata":"https://www.wikidata.org/wiki/Q9941","display_name":"Non-blocking I/O","level":3,"score":0.8033169507980347},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7261533737182617},{"id":"https://openalex.org/C117926987","wikidata":"https://www.wikidata.org/wiki/Q210009","display_name":"Joule heating","level":2,"score":0.6939160823822021},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.6907365322113037},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.6028573513031006},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.5413044095039368},{"id":"https://openalex.org/C94857076","wikidata":"https://www.wikidata.org/wiki/Q106603432","display_name":"Electrical resistance and conductance","level":2,"score":0.4447520077228546},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4116796553134918},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.3168001174926758},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23334550857543945},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.20739620923995972},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19002729654312134},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1393161118030548},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.2204649","doi":"https://doi.org/10.1063/1.2204649","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2204649","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W2021942642","https://openalex.org/W2024255336","https://openalex.org/W2028461509","https://openalex.org/W2032520491","https://openalex.org/W2038941015","https://openalex.org/W2053948149","https://openalex.org/W2059384115","https://openalex.org/W2122193720","https://openalex.org/W2147382675"],"related_works":["https://openalex.org/W4224217224","https://openalex.org/W3118640947","https://openalex.org/W4388308731","https://openalex.org/W2042003698","https://openalex.org/W1964519618","https://openalex.org/W1969697984","https://openalex.org/W3143498405","https://openalex.org/W2054635671","https://openalex.org/W3048730783","https://openalex.org/W4319989691"],"abstract_inverted_index":{"Experimental":[0],"results":[1,69],"on":[2,72],"the":[3,34,61,73],"bistable":[4],"resistive":[5,35],"memory":[6,12,62],"switching":[7,63],"in":[8,65,78],"submicron":[9],"sized":[10],"NiO":[11],"cells":[13],"are":[14,31,46,70],"presented.":[15],"By":[16],"using":[17],"a":[18],"current-bias":[19],"method,":[20],"intermediate":[21],"resistance":[22,26,29,39,43],"states":[23,30],"and":[24,58],"anomalous":[25],"fluctuations":[27],"between":[28],"observed":[32],"during":[33],"transition":[36],"from":[37],"high":[38],"state":[40],"to":[41,48],"low":[42],"state.":[44],"They":[45],"interpreted":[47],"be":[49],"associated":[50],"with":[51,55],"filamentary":[52,76],"conducting":[53],"paths":[54],"their":[56],"formation":[57],"rupture":[59],"for":[60],"origin":[64],"NiO.":[66],"The":[67],"experimental":[68],"discussed":[71],"basis":[74],"of":[75,80],"conductions":[77],"consideration":[79],"local":[81],"Joule":[82],"heating":[83],"effect.":[84]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":9},{"year":2023,"cited_by_count":15},{"year":2022,"cited_by_count":11},{"year":2021,"cited_by_count":11},{"year":2020,"cited_by_count":6},{"year":2019,"cited_by_count":15},{"year":2018,"cited_by_count":20},{"year":2017,"cited_by_count":19},{"year":2016,"cited_by_count":30},{"year":2015,"cited_by_count":28},{"year":2014,"cited_by_count":45},{"year":2013,"cited_by_count":41},{"year":2012,"cited_by_count":54}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2025-10-10T00:00:00"}