{"id":"https://openalex.org/W2002408488","doi":"https://doi.org/10.1063/1.366756","title":"Wafer fused p-InP/p-GaAs heterojunctions","display_name":"Wafer fused p-InP/p-GaAs heterojunctions","publication_year":1998,"publication_date":"1998-01-15","ids":{"openalex":"https://openalex.org/W2002408488","doi":"https://doi.org/10.1063/1.366756","mag":"2002408488"},"language":"en","primary_location":{"id":"doi:10.1063/1.366756","doi":"https://doi.org/10.1063/1.366756","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.366756","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5037307665","display_name":"Fredrik Salomonsson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"F. Salomonsson","raw_affiliation_strings":["Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079320828","display_name":"Klaus P. Streubel","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"K. Streubel","raw_affiliation_strings":["Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016107395","display_name":"Jonas L. Bentell","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"J. Bentell","raw_affiliation_strings":["Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090832599","display_name":"Mattias Hammar","orcid":"https://orcid.org/0000-0002-9040-4740","observed_orcids":["https://orcid.org/0000-0002-9040-4740"]},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"M. Hammar","raw_affiliation_strings":["Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064881889","display_name":"Dietmar Keiper","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"D. Keiper","raw_affiliation_strings":["Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008382880","display_name":"R. Westphalen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"R. Westphalen","raw_affiliation_strings":["Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, The Royal Institute of Technology, Electrum 229, S-164, 40 Kista, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033427254","display_name":"Joachim Piprek","orcid":"https://orcid.org/0000-0002-4002-1629","observed_orcids":["https://orcid.org/0000-0002-4002-1629"]},"institutions":[{"id":"https://openalex.org/I86501945","display_name":"University of Delaware","ror":"https://ror.org/01sbq1a82","country_code":"US","type":"education","lineage":["https://openalex.org/I86501945"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Piprek","raw_affiliation_strings":["University of Delaware, Materials Science Program, 201A Spencer Laboratory, Newark, Delaware 19716-3106"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Delaware, Materials Science Program, 201A Spencer Laboratory, Newark, Delaware 19716-3106","institution_ids":["https://openalex.org/I86501945"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020416035","display_name":"Laurent Sagalowicz","orcid":"https://orcid.org/0000-0001-9460-4953","observed_orcids":["https://orcid.org/0000-0001-9460-4953"]},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"L. Sagalowicz","raw_affiliation_strings":["Institut de Micro et Opto\u00e9lectronique, D\u00e9partement de Physique, Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne, 1015 Lausanne, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut de Micro et Opto\u00e9lectronique, D\u00e9partement de Physique, Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne, 1015 Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007562996","display_name":"Alok P. Rudra","orcid":"https://orcid.org/0000-0002-4731-3704","observed_orcids":["https://orcid.org/0000-0002-4731-3704"]},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"A. Rudra","raw_affiliation_strings":["Institut de Micro et Opto\u00e9lectronique, D\u00e9partement de Physique, Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne, 1015 Lausanne, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut de Micro et Opto\u00e9lectronique, D\u00e9partement de Physique, Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne, 1015 Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5022609306","display_name":"J. Behrend","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"J. Behrend","raw_affiliation_strings":["Institut de Micro et Opto\u00e9lectronique, D\u00e9partement de Physique, Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne, 1015 Lausanne, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut de Micro et Opto\u00e9lectronique, D\u00e9partement de Physique, Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne, 1015 Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":3.0501,"has_fulltext":false,"cited_by_count":31,"citation_normalized_percentile":{"value":0.91601591,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"83","issue":"2","first_page":"768","last_page":"774"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9574999809265137,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9574999809265137,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.021900000050663948,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.0038999998942017555,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/wafer-bonding","display_name":"wafer bonding","score":0.9539999961853027},{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"indium phosphide","score":0.765999972820282},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"GaAs","score":0.9990000128746033},{"id":"https://openalex.org/keywords/interface-contamination","display_name":"interface contamination","score":0.5630000233650208},{"id":"https://openalex.org/keywords/dopant-distribution","display_name":"dopant distribution","score":0.8270000219345093},{"id":"https://openalex.org/keywords/beryllium-doping","display_name":"beryllium doping","score":0.7950000166893005},{"id":"https://openalex.org/keywords/zinc-doping","display_name":"zinc doping","score":0.9810000061988831},{"id":"https://openalex.org/keywords/carbon-doping","display_name":"carbon doping","score":0.8420000076293945},{"id":"https://openalex.org/keywords/acceptor-concentration","display_name":"acceptor concentration","score":0.9769999980926514},{"id":"https://openalex.org/keywords/thermionic-emission","display_name":"thermionic emission","score":0.8489999771118164},{"id":"https://openalex.org/keywords/tunneling","display_name":"tunneling","score":0.7580000162124634},{"id":"https://openalex.org/keywords/numerical-modeling","display_name":"numerical modeling","score":0.4909999966621399}],"concepts":[{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.8042558431625366},{"id":"https://openalex.org/C143979616","wikidata":"https://www.wikidata.org/wiki/Q215259","display_name":"Thermionic emission","level":3,"score":0.7612441778182983},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.6329612731933594},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6273389458656311},{"id":"https://openalex.org/C77671233","wikidata":"https://www.wikidata.org/wiki/Q556046","display_name":"Secondary ion mass spectrometry","level":3,"score":0.5859338641166687},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5675939917564392},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5433720946311951},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.5113994479179382},{"id":"https://openalex.org/C2779892579","wikidata":"https://www.wikidata.org/wiki/Q912138","display_name":"Acceptor","level":2,"score":0.4327208697795868},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.21115568280220032},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.20430517196655273},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.12041658163070679},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.1074722409248352},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.366756","doi":"https://doi.org/10.1063/1.366756","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.366756","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W1964878572","https://openalex.org/W1966881234","https://openalex.org/W1973473696","https://openalex.org/W1978520376","https://openalex.org/W1980937491","https://openalex.org/W1999231808","https://openalex.org/W2007589653","https://openalex.org/W2013596755","https://openalex.org/W2021966505","https://openalex.org/W2024085518","https://openalex.org/W2029308890","https://openalex.org/W2034901789","https://openalex.org/W2036539604","https://openalex.org/W2043437204","https://openalex.org/W2044201336","https://openalex.org/W2051050084","https://openalex.org/W2056117888","https://openalex.org/W2062689323","https://openalex.org/W2064050256","https://openalex.org/W2071285887","https://openalex.org/W2076161275","https://openalex.org/W2079138283","https://openalex.org/W2086684458","https://openalex.org/W2091552317","https://openalex.org/W2138605137","https://openalex.org/W2145860427","https://openalex.org/W2150082996","https://openalex.org/W2170056580","https://openalex.org/W2219757434"],"related_works":["https://openalex.org/W2101932496","https://openalex.org/W2140823978","https://openalex.org/W2589076309","https://openalex.org/W1998907706","https://openalex.org/W1964878572","https://openalex.org/W1974298051","https://openalex.org/W1985853426","https://openalex.org/W1596137849","https://openalex.org/W2057425561","https://openalex.org/W7006746248"],"abstract_inverted_index":{"This":[0],"article":[1],"reports":[2],"on":[3],"the":[4,27,32,43,60,95,111],"fabrication":[5],"and":[6,14,51,75,81,108],"characterization":[7],"of":[8,42,59,68],"wafer":[9],"fused":[10,44,61],"heterojunctions":[11],"between":[12],"p-InP":[13],"p-GaAs.":[15],"Secondary":[16],"ion":[17],"mass":[18],"spectroscopy":[19],"was":[20,46],"used":[21],"to":[22],"characterize":[23],"doping":[24,70],"profiles":[25],"across":[26,110],"interface":[28,33,62],"as":[29,31,65,73,85,87],"well":[30,86],"contamination":[34],"with":[35],"oxygen":[36],"or":[37,79],"carbon.":[38],"The":[39,56],"crystalline":[40],"quality":[41],"material":[45],"characterized":[47],"using":[48,100],"cross":[49],"section":[50],"plan-view":[52],"transmission":[53],"electron":[54],"microscopy.":[55],"electrical":[57,96],"properties":[58],"were":[63,98],"studied":[64],"a":[66,101],"function":[67],"various":[69],"elements":[71],"such":[72],"Be":[74],"Zn":[76,80],"in":[77,83,92],"InP":[78],"C":[82],"GaAs":[84],"for":[88],"different":[89],"acceptor":[90],"concentrations":[91],"GaAs.":[93],"Finally,":[94],"characteristics":[97],"analyzed":[99],"numerical":[102],"model":[103],"that":[104],"includes":[105],"thermionic":[106],"emission":[107],"tunneling":[109],"heterobarrier.":[112]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}