{"id":"https://openalex.org/W2002256088","doi":"https://doi.org/10.1002/1521-396x(200212)194:2<419::aid-pssa419>3.0.co;2-b","title":"Degradation Analysis of InGaN Laser Diodes","display_name":"Degradation Analysis of InGaN Laser Diodes","publication_year":2002,"publication_date":"2002-12-01","ids":{"openalex":"https://openalex.org/W2002256088","doi":"https://doi.org/10.1002/1521-396x(200212)194:2<419::aid-pssa419>3.0.co;2-b","mag":"2002256088"},"language":"en","primary_location":{"id":"doi:10.1002/1521-396x(200212)194:2<419::aid-pssa419>3.0.co;2-b","doi":"https://doi.org/10.1002/1521-396x(200212)194:2<419::aid-pssa419>3.0.co;2-b","is_oa":false,"landing_page_url":"https://doi.org/10.1002/1521-396x(200212)194:2<419::aid-pssa419>3.0.co;2-b","pdf_url":null,"source":{"id":"https://openalex.org/S4210228582","display_name":"physica status solidi (a)","issn_l":"0031-8965","issn":["0031-8965","1521-396X","1862-6300","1862-6319"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"physica status solidi (a)","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://doi.org/10.5283/epub.11319","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5097341506","display_name":"V. K\ufffdmmler","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4387154934","display_name":"Osram Opto Semiconductors","ror":"https://ror.org/05v6nhz77","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210103613","https://openalex.org/I4387154934"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"V. K\ufffdmmler","raw_affiliation_strings":["OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany","institution_ids":["https://openalex.org/I4387154934"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5096862482","display_name":"G. Br\ufffdderl","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4387154934","display_name":"Osram Opto Semiconductors","ror":"https://ror.org/05v6nhz77","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210103613","https://openalex.org/I4387154934"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"G. Br\ufffdderl","raw_affiliation_strings":["OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany","institution_ids":["https://openalex.org/I4387154934"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111889857","display_name":"Stefan Bader","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4387154934","display_name":"Osram Opto Semiconductors","ror":"https://ror.org/05v6nhz77","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210103613","https://openalex.org/I4387154934"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"S. Bader","raw_affiliation_strings":["OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany","institution_ids":["https://openalex.org/I4387154934"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040352019","display_name":"Stephan Miller","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4387154934","display_name":"Osram Opto Semiconductors","ror":"https://ror.org/05v6nhz77","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210103613","https://openalex.org/I4387154934"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"S. Miller","raw_affiliation_strings":["OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany","institution_ids":["https://openalex.org/I4387154934"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046405240","display_name":"Andreas Weimar","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4387154934","display_name":"Osram Opto Semiconductors","ror":"https://ror.org/05v6nhz77","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210103613","https://openalex.org/I4387154934"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"A. Weimar","raw_affiliation_strings":["OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany","institution_ids":["https://openalex.org/I4387154934"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026547786","display_name":"A. Lell","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4387154934","display_name":"Osram Opto Semiconductors","ror":"https://ror.org/05v6nhz77","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210103613","https://openalex.org/I4387154934"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"A. Lell","raw_affiliation_strings":["OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany","institution_ids":["https://openalex.org/I4387154934"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5096835399","display_name":"V. H\ufffdrle","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4387154934","display_name":"Osram Opto Semiconductors","ror":"https://ror.org/05v6nhz77","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210103613","https://openalex.org/I4387154934"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"V. H\ufffdrle","raw_affiliation_strings":["OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany","institution_ids":["https://openalex.org/I4387154934"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088177776","display_name":"Ulrich Theodor Schwarz","orcid":"https://orcid.org/0000-0002-1889-2188","observed_orcids":["https://orcid.org/0000-0002-1889-2188"]},"institutions":[{"id":"https://openalex.org/I60668342","display_name":"University of Regensburg","ror":"https://ror.org/01eezs655","country_code":"DE","type":"education","lineage":["https://openalex.org/I60668342"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"U.T. Schwarz","raw_affiliation_strings":["Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany","#N#Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany","institution_ids":["https://openalex.org/I60668342"]},{"raw_affiliation_string":"#N#Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany","institution_ids":["https://openalex.org/I60668342"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014690669","display_name":"Nikolaus Gmeinwieser","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I60668342","display_name":"University of Regensburg","ror":"https://ror.org/01eezs655","country_code":"DE","type":"education","lineage":["https://openalex.org/I60668342"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"N. Gmeinwieser","raw_affiliation_strings":["Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany","#N#Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany","institution_ids":["https://openalex.org/I60668342"]},{"raw_affiliation_string":"#N#Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany","institution_ids":["https://openalex.org/I60668342"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032749984","display_name":"W. Wegscheider","orcid":"https://orcid.org/0000-0002-2138-5558","observed_orcids":["https://orcid.org/0000-0002-2138-5558"]},"institutions":[{"id":"https://openalex.org/I60668342","display_name":"University of Regensburg","ror":"https://ror.org/01eezs655","country_code":"DE","type":"education","lineage":["https://openalex.org/I60668342"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"W. Wegscheider","raw_affiliation_strings":["Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany","#N#Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany","institution_ids":["https://openalex.org/I60668342"]},{"raw_affiliation_string":"#N#Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany","institution_ids":["https://openalex.org/I60668342"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3780,"currency":"USD","value_usd":3780},"apc_paid":null,"fwci":2.1199,"has_fulltext":false,"cited_by_count":27,"citation_normalized_percentile":{"value":0.86751152,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":96},"biblio":{"volume":"194","issue":"2","first_page":"419","last_page":"422"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ingan-laser-diodes","display_name":"InGaN laser diodes","score":0.9980000257492065},{"id":"https://openalex.org/keywords/multiple-quantum-wells","display_name":"multiple quantum wells","score":0.7310000061988831},{"id":"https://openalex.org/keywords/silicon-carbide-substrate","display_name":"SiC substrate","score":0.7179999947547913},{"id":"https://openalex.org/keywords/thermal-degradation","display_name":"thermal degradation","score":0.6700000166893005},{"id":"https://openalex.org/keywords/thermal-resistance","display_name":"thermal resistance","score":0.8820000290870667},{"id":"https://openalex.org/keywords/current-induced-degradation","display_name":"current-induced degradation","score":0.6880000233650208},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":0.7889999747276306},{"id":"https://openalex.org/keywords/aging-materials","display_name":"aging materials","score":0.4320000112056732},{"id":"https://openalex.org/keywords/heat-spreading","display_name":"heat spreading","score":0.5059999823570251},{"id":"https://openalex.org/keywords/cleaved-facets","display_name":"cleaved facets","score":0.8610000014305115}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8097133636474609},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7789609432220459},{"id":"https://openalex.org/C40637687","wikidata":"https://www.wikidata.org/wiki/Q676237","display_name":"Lasing threshold","level":3,"score":0.7350661158561707},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.7270702719688416},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.71006178855896},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6518791913986206},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.5680720806121826},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.49502962827682495},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.49433135986328125},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.49146902561187744},{"id":"https://openalex.org/C2777048131","wikidata":"https://www.wikidata.org/wiki/Q321098","display_name":"Laser diode","level":3,"score":0.42369669675827026},{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.4205259382724762},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3330516815185547},{"id":"https://openalex.org/C6260449","wikidata":"https://www.wikidata.org/wiki/Q41364","display_name":"Wavelength","level":2,"score":0.1574312448501587},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.09531983733177185},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":4,"locations":[{"id":"doi:10.1002/1521-396x(200212)194:2<419::aid-pssa419>3.0.co;2-b","doi":"https://doi.org/10.1002/1521-396x(200212)194:2<419::aid-pssa419>3.0.co;2-b","is_oa":false,"landing_page_url":"https://doi.org/10.1002/1521-396x(200212)194:2<419::aid-pssa419>3.0.co;2-b","pdf_url":null,"source":{"id":"https://openalex.org/S4210228582","display_name":"physica status solidi (a)","issn_l":"0031-8965","issn":["0031-8965","1521-396X","1862-6300","1862-6319"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"physica status solidi (a)","raw_type":"journal-article"},{"id":"pmh:oai:epub.uni-regensburg.de:11319","doi":null,"is_oa":false,"landing_page_url":"https://epub.uni-regensburg.de/11319/1/Wegscheider.pdf","pdf_url":"https://epub.uni-regensburg.de/11319/1/Wegscheider.pdf","source":{"id":"https://openalex.org/S4306401229","display_name":"University of Regensburg Publication Server (University of Regensburg)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I60668342","host_organization_name":"University of Regensburg","host_organization_lineage":["https://openalex.org/I60668342"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:epub.uni-regensburg.de:2610","doi":null,"is_oa":false,"landing_page_url":"https://epub.uni-regensburg.de/2610/","pdf_url":null,"source":{"id":"https://openalex.org/S4306401229","display_name":"University of Regensburg Publication Server (University of Regensburg)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I60668342","host_organization_name":"University of Regensburg","host_organization_lineage":["https://openalex.org/I60668342"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/article"},{"id":"doi:10.5283/epub.11319","doi":"https://doi.org/10.5283/epub.11319","is_oa":true,"landing_page_url":"https://doi.org/10.5283/epub.11319","pdf_url":null,"source":{"id":"https://openalex.org/S4306401229","display_name":"University of Regensburg Publication Server (University of Regensburg)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I60668342","host_organization_name":"University of Regensburg","host_organization_lineage":["https://openalex.org/I60668342"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"article-journal"}],"best_oa_location":{"id":"doi:10.5283/epub.11319","doi":"https://doi.org/10.5283/epub.11319","is_oa":true,"landing_page_url":"https://doi.org/10.5283/epub.11319","pdf_url":null,"source":{"id":"https://openalex.org/S4306401229","display_name":"University of Regensburg Publication Server (University of Regensburg)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I60668342","host_organization_name":"University of Regensburg","host_organization_lineage":["https://openalex.org/I60668342"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"article-journal"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1980735545","https://openalex.org/W1992907901","https://openalex.org/W2000063798","https://openalex.org/W2034432975","https://openalex.org/W2042916342","https://openalex.org/W2045139612","https://openalex.org/W2060132413","https://openalex.org/W2066801783"],"related_works":["https://openalex.org/W2018956840","https://openalex.org/W2023990308","https://openalex.org/W2000063798","https://openalex.org/W2124539209","https://openalex.org/W2022846766","https://openalex.org/W2003918290","https://openalex.org/W2101155453","https://openalex.org/W2416885650","https://openalex.org/W2072962673","https://openalex.org/W2077185764"],"abstract_inverted_index":{"The":[0,30],"current":[1,22,72],"status":[2],"of":[3,49,55,84],"InGaN-MQW-laser":[4],"diodes":[5],"developed":[6],"at":[7,58],"Osram":[8],"OS":[9],"is":[10,36],"presented.":[11],"These":[12],"lasers":[13],"are":[14,88],"grown":[15],"on":[16],"n-conducting":[17],"SiC,":[18],"enabling":[19],"a":[20],"vertical":[21],"path,":[23],"cleaved":[24],"facets":[25],"and":[26,68,92],"excellent":[27],"heat":[28,79],"spreading.":[29],"temperature":[31],"rise":[32],"during":[33],"cw":[34,56],"operation":[35],"measured":[37],"for":[38,80],"different":[39],"mountings.":[40],"A":[41],"p-side":[42],"up":[43],"mounted":[44],"diode":[45],"with":[46],"thermal":[47],"resistance":[48],"18":[50],"K/W":[51],"showed":[52],"143":[53],"h":[54],"lasing":[57],"1":[59],"mW":[60],"optical":[61],"power":[62],"(T":[63],"=":[64],"25":[65],"\u00b0C).":[66],"DC":[67],"pulsed":[69],"aging":[70],"shows":[71],"as":[73],"main":[74],"degradation":[75,94],"reason":[76],"compared":[77,90],"to":[78],"InGaN-LDs.":[81],"Photoluminescence":[82],"spectra":[83],"the":[85],"quantum":[86],"wells":[87],"being":[89],"before":[91],"after":[93],"caused":[95],"by":[96],"current.":[97]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}