{"id":"https://openalex.org/W2002147104","doi":"https://doi.org/10.1016/s0038-1101(99)00327-5","title":"Electrical characterization of Si/Si1\u2212xGex/Si quantum well heterostructures using a MOS capacitor","display_name":"Electrical characterization of Si/Si1\u2212xGex/Si quantum well heterostructures using a MOS capacitor","publication_year":2000,"publication_date":"2000-06-01","ids":{"openalex":"https://openalex.org/W2002147104","doi":"https://doi.org/10.1016/s0038-1101(99)00327-5","mag":"2002147104"},"language":"en","primary_location":{"id":"doi:10.1016/s0038-1101(99)00327-5","doi":"https://doi.org/10.1016/s0038-1101(99)00327-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0038-1101(99)00327-5","pdf_url":null,"source":{"id":"https://openalex.org/S77418581","display_name":"Solid-State Electronics","issn_l":"0038-1101","issn":["0038-1101","1879-2405"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Solid-State Electronics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006442778","display_name":"Siddheswar Maikap","orcid":"https://orcid.org/0000-0002-7825-5586","observed_orcids":["https://orcid.org/0000-0002-7825-5586"]},"institutions":[{"id":"https://openalex.org/I145894827","display_name":"Indian Institute of Technology Kharagpur","ror":"https://ror.org/03w5sq511","country_code":"IN","type":"education","lineage":["https://openalex.org/I145894827"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"S. Maikap","raw_affiliation_strings":["[Indian Inst. of Technol., Kharagpur]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"[Indian Inst. of Technol., Kharagpur]","institution_ids":["https://openalex.org/I145894827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018981088","display_name":"Lakshmi Kanta Bera","orcid":"https://orcid.org/0000-0003-3171-4463","observed_orcids":["https://orcid.org/0000-0003-3171-4463"]},"institutions":[{"id":"https://openalex.org/I145894827","display_name":"Indian Institute of Technology Kharagpur","ror":"https://ror.org/03w5sq511","country_code":"IN","type":"education","lineage":["https://openalex.org/I145894827"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"L.K. Bera","raw_affiliation_strings":["[Indian Inst. of Technol., Kharagpur]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"[Indian Inst. of Technol., Kharagpur]","institution_ids":["https://openalex.org/I145894827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032590306","display_name":"Samit Kumar Ray","orcid":"https://orcid.org/0000-0002-8099-6690","observed_orcids":["https://orcid.org/0000-0002-8099-6690"]},"institutions":[{"id":"https://openalex.org/I145894827","display_name":"Indian Institute of Technology Kharagpur","ror":"https://ror.org/03w5sq511","country_code":"IN","type":"education","lineage":["https://openalex.org/I145894827"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"S.K. Ray","raw_affiliation_strings":["[Indian Inst. of Technol., Kharagpur]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"[Indian Inst. of Technol., Kharagpur]","institution_ids":["https://openalex.org/I145894827"]}]},{"author_position":"middle","author":{"id":null,"display_name":"S. John","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. John","raw_affiliation_strings":["Texas Instruments"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111972078","display_name":"S. Banerjee","orcid":"https://orcid.org/0009-0002-5559-4806","observed_orcids":["https://orcid.org/0009-0002-5559-4806"]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S.K. Banerjee","raw_affiliation_strings":["MERB, University of Texas at Austin, TX 78758, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MERB, University of Texas at Austin, TX 78758, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036261096","display_name":"Chinmay Kumar Maiti","orcid":"https://orcid.org/0000-0003-2854-6606","observed_orcids":["https://orcid.org/0000-0003-2854-6606"]},"institutions":[{"id":"https://openalex.org/I145894827","display_name":"Indian Institute of Technology Kharagpur","ror":"https://ror.org/03w5sq511","country_code":"IN","type":"education","lineage":["https://openalex.org/I145894827"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"C.K. Maiti","raw_affiliation_strings":["[Indian Inst. of Technol., Kharagpur]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"[Indian Inst. of Technol., Kharagpur]","institution_ids":["https://openalex.org/I145894827"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2410,"currency":"USD","value_usd":2410},"apc_paid":null,"fwci":1.2678,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.79152298,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":93},"biblio":{"volume":"44","issue":"6","first_page":"1029","last_page":"1034"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9657999873161316,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9657999873161316,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.018400000408291817,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0071000000461936,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mos-capacitors","display_name":"MOS capacitors","score":0.8209999799728394},{"id":"https://openalex.org/keywords/ultrathin-oxide","display_name":"ultrathin oxide","score":0.6869999766349792},{"id":"https://openalex.org/keywords/hole-concentration","display_name":"hole concentration","score":0.746999979019165},{"id":"https://openalex.org/keywords/valence-band-discontinuity","display_name":"valence band discontinuity","score":0.9860000014305115},{"id":"https://openalex.org/keywords/heterointerface","display_name":"heterointerface","score":0.8529999852180481},{"id":"https://openalex.org/keywords/capacitance-voltage-profiling","display_name":"capacitance-voltage profiling","score":0.8069999814033508},{"id":"https://openalex.org/keywords/charge-trapping","display_name":"charge trapping","score":0.9700000286102295},{"id":"https://openalex.org/keywords/low-temperature-oxide-growth","display_name":"low-temperature oxide growth","score":0.6470000147819519}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7731556296348572},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6461696028709412},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.5802584290504456},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.48612499237060547},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46202123165130615},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.43691202998161316},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.41209131479263306},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3807733654975891},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2763310968875885},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.13714942336082458},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.12725669145584106},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.09080830216407776},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.08715498447418213},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0038-1101(99)00327-5","doi":"https://doi.org/10.1016/s0038-1101(99)00327-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0038-1101(99)00327-5","pdf_url":null,"source":{"id":"https://openalex.org/S77418581","display_name":"Solid-State Electronics","issn_l":"0038-1101","issn":["0038-1101","1879-2405"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Solid-State Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":39,"referenced_works":["https://openalex.org/W285749399","https://openalex.org/W1969581251","https://openalex.org/W1981248344","https://openalex.org/W1981532104","https://openalex.org/W1981549648","https://openalex.org/W1983155250","https://openalex.org/W1985739784","https://openalex.org/W1992352882","https://openalex.org/W1993337970","https://openalex.org/W1994569108","https://openalex.org/W1995072510","https://openalex.org/W1998109892","https://openalex.org/W1999473397","https://openalex.org/W2003156506","https://openalex.org/W2004806004","https://openalex.org/W2014072268","https://openalex.org/W2018577436","https://openalex.org/W2023789056","https://openalex.org/W2028489850","https://openalex.org/W2033064728","https://openalex.org/W2038250532","https://openalex.org/W2040200521","https://openalex.org/W2045604461","https://openalex.org/W2045763055","https://openalex.org/W2046202984","https://openalex.org/W2057497792","https://openalex.org/W2064037762","https://openalex.org/W2072623154","https://openalex.org/W2075433731","https://openalex.org/W2076343339","https://openalex.org/W2076508304","https://openalex.org/W2084843635","https://openalex.org/W2100954911","https://openalex.org/W2104557512","https://openalex.org/W2130643085","https://openalex.org/W2138643547","https://openalex.org/W2161314819","https://openalex.org/W2169800615","https://openalex.org/W2536954777"],"related_works":["https://openalex.org/W2059135052","https://openalex.org/W2076508304","https://openalex.org/W2009436943","https://openalex.org/W2051724439","https://openalex.org/W2072570956","https://openalex.org/W2072369854","https://openalex.org/W2039471727","https://openalex.org/W150029303","https://openalex.org/W3151777920","https://openalex.org/W2033997739"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}