{"id":"https://openalex.org/W2001592020","doi":"https://doi.org/10.1116/1.1610004","title":"Damage-free extreme ultraviolet mask with TaBN absorber","display_name":"Damage-free extreme ultraviolet mask with TaBN absorber","publication_year":2003,"publication_date":"2003-11-01","ids":{"openalex":"https://openalex.org/W2001592020","doi":"https://doi.org/10.1116/1.1610004","mag":"2001592020"},"language":"en","primary_location":{"id":"doi:10.1116/1.1610004","doi":"https://doi.org/10.1116/1.1610004","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.1610004","pdf_url":null,"source":{"id":"https://openalex.org/S4210169477","display_name":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","issn_l":"1071-1023","issn":["1071-1023","1520-8567"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","poland-70"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016197670","display_name":"Tsutomu Shoki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I68926175","display_name":"Hoya (Japan)","ror":"https://ror.org/049vpfq31","country_code":"JP","type":"company","lineage":["https://openalex.org/I68926175"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tsutomu Shoki","raw_affiliation_strings":["Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan","institution_ids":["https://openalex.org/I68926175"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066383573","display_name":"Takeru Kinoshita","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I68926175","display_name":"Hoya (Japan)","ror":"https://ror.org/049vpfq31","country_code":"JP","type":"company","lineage":["https://openalex.org/I68926175"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takeru Kinoshita","raw_affiliation_strings":["Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan","institution_ids":["https://openalex.org/I68926175"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048859087","display_name":"Noriyuki Sakaya","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I68926175","display_name":"Hoya (Japan)","ror":"https://ror.org/049vpfq31","country_code":"JP","type":"company","lineage":["https://openalex.org/I68926175"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Noriyuki Sakaya","raw_affiliation_strings":["Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan","institution_ids":["https://openalex.org/I68926175"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027950115","display_name":"Morio Hosoya","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I68926175","display_name":"Hoya (Japan)","ror":"https://ror.org/049vpfq31","country_code":"JP","type":"company","lineage":["https://openalex.org/I68926175"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Morio Hosoya","raw_affiliation_strings":["Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan","institution_ids":["https://openalex.org/I68926175"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111871061","display_name":"Ryo Ohkubo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I68926175","display_name":"Hoya (Japan)","ror":"https://ror.org/049vpfq31","country_code":"JP","type":"company","lineage":["https://openalex.org/I68926175"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ryo Ohkubo","raw_affiliation_strings":["Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan","institution_ids":["https://openalex.org/I68926175"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072466409","display_name":"Yoh-ichi Usui","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I68926175","display_name":"Hoya (Japan)","ror":"https://ror.org/049vpfq31","country_code":"JP","type":"company","lineage":["https://openalex.org/I68926175"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoh-ich Usui","raw_affiliation_strings":["Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan","institution_ids":["https://openalex.org/I68926175"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102100621","display_name":"Hideo Kobayashi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I68926175","display_name":"Hoya (Japan)","ror":"https://ror.org/049vpfq31","country_code":"JP","type":"company","lineage":["https://openalex.org/I68926175"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideo Kobayashi","raw_affiliation_strings":["Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan","institution_ids":["https://openalex.org/I68926175"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006993911","display_name":"Osamu Nagarekawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I68926175","display_name":"Hoya (Japan)","ror":"https://ror.org/049vpfq31","country_code":"JP","type":"company","lineage":["https://openalex.org/I68926175"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Osamu Nagarekawa","raw_affiliation_strings":["Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Development Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo\u2009196-8510, Japan","institution_ids":["https://openalex.org/I68926175"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I68926175"],"apc_list":null,"apc_paid":null,"fwci":0.331,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.65637387,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"21","issue":"6","first_page":"3021","last_page":"3026"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11723","display_name":"Optical Coatings and Gratings","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11183","display_name":"Advanced X-ray Imaging Techniques","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3108","display_name":"Radiation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/process-induced-damage","display_name":"process-induced damage","score":0.8820000290870667},{"id":"https://openalex.org/keywords/reflectivity-loss","display_name":"reflectivity loss","score":0.5490000247955322},{"id":"https://openalex.org/keywords/long-term-storage-stability","display_name":"long-term storage stability","score":0.7239999771118164},{"id":"https://openalex.org/keywords/thin-film-stress","display_name":"film stress","score":0.7760000228881836},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.8399999737739563},{"id":"https://openalex.org/keywords/hf-treatment","display_name":"HF treatment","score":0.6779999732971191}],"concepts":[{"id":"https://openalex.org/C162996421","wikidata":"https://www.wikidata.org/wiki/Q371965","display_name":"Extreme ultraviolet lithography","level":2,"score":0.9507100582122803},{"id":"https://openalex.org/C2778089247","wikidata":"https://www.wikidata.org/wiki/Q368951","display_name":"Blank","level":2,"score":0.8828626275062561},{"id":"https://openalex.org/C146024833","wikidata":"https://www.wikidata.org/wiki/Q1385457","display_name":"Extreme ultraviolet","level":3,"score":0.8262418508529663},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7976469993591309},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6462234258651733},{"id":"https://openalex.org/C2776798109","wikidata":"https://www.wikidata.org/wiki/Q11391","display_name":"Ultraviolet","level":2,"score":0.5618182420730591},{"id":"https://openalex.org/C6260449","wikidata":"https://www.wikidata.org/wiki/Q41364","display_name":"Wavelength","level":2,"score":0.5480239391326904},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.5387969613075256},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5170336365699768},{"id":"https://openalex.org/C108597893","wikidata":"https://www.wikidata.org/wiki/Q663650","display_name":"Reflectivity","level":2,"score":0.46541428565979004},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.4505588710308075},{"id":"https://openalex.org/C145018004","wikidata":"https://www.wikidata.org/wiki/Q4985944","display_name":"Buffer (optical fiber)","level":2,"score":0.44641104340553284},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.19473350048065186},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.07069540023803711},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.1610004","doi":"https://doi.org/10.1116/1.1610004","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.1610004","pdf_url":null,"source":{"id":"https://openalex.org/S4210169477","display_name":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","issn_l":"1071-1023","issn":["1071-1023","1520-8567"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","poland-70"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1976513674","https://openalex.org/W1988480552","https://openalex.org/W2012941966","https://openalex.org/W2056289145","https://openalex.org/W2069518193","https://openalex.org/W2081941255"],"related_works":["https://openalex.org/W2056289145","https://openalex.org/W2010497159","https://openalex.org/W2006774835","https://openalex.org/W2125997150","https://openalex.org/W4388895819","https://openalex.org/W1978305836","https://openalex.org/W1978014917","https://openalex.org/W2081119616","https://openalex.org/W1969377062","https://openalex.org/W2062124270"],"abstract_inverted_index":{"This":[0],"article":[1],"presents":[2],"the":[3,50,78,92,101,107],"results":[4],"of":[5,7,13,24,87,97,138,144,153],"evaluation":[6],"process-induced":[8],"damage":[9],"and":[10,35,46,65,74,89,140,157],"improved":[11],"reflectivity":[12,95,112,137,142],"an":[14],"extreme":[15],"ultraviolet":[16],"(EUV)":[17],"mask":[18,93,133],"fabricated":[19],"using":[20,149],"a":[21,25,27,31,36,42,85,127,135,150,154,158,163],"blank":[22,54,151],"consisting":[23,152],"multilayer,":[26],"Si":[28,108,159],"capping":[29,109,160],"layer,":[30,34],"CrN":[32,79],"buffer":[33,80],"TaBN":[37],"absorber.":[38],"Long-term":[39],"storage":[40],"causes":[41],"centroid":[43,63],"wavelength":[44,64],"shift":[45],"stress":[47,67],"change":[48],"in":[49,62],"multilayer.":[51],"The":[52,111],"multilayer":[53,156],"annealed":[55],"at":[56,71],"90":[57],"\u00b0C":[58,73],"was":[59,82,114,147],"quite":[60],"stable":[61],"film":[66],"against":[68],"resist":[69],"baking":[70],"135":[72],"air":[75],"storage.":[76],"After":[77],"layer":[81,104,161],"etched":[83],"with":[84,126,134],"mixture":[86],"Cl2":[88],"O2":[90],"gases,":[91],"featured":[94],"loss":[96,113],"1.5%":[98],"due":[99],"to":[100,116,120],"additional":[102],"oxide":[103],"generated":[105],"on":[106],"layer.":[110],"able":[115],"be":[117],"completely":[118],"restored":[119],"its":[121],"original":[122],"value":[123],"by":[124],"treatment":[125],"diluted":[128],"HF":[129,170],"solution.":[130],"An":[131],"EUV":[132],"high":[136],"65%":[139],"excellent":[141],"uniformity":[143],"0.7%":[145],"3\u03c3":[146],"demonstrated":[148],"40-period":[155],"through":[162],"newly":[164],"developed":[165],"damage-free":[166],"process":[167],"that":[168],"includes":[169],"treatment.":[171]},"counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-09-25T08:18:29.962427","created_date":"2016-06-24T00:00:00"}