{"id":"https://openalex.org/W2001237176","doi":"https://doi.org/10.1143/jjap.39.2492","title":"Passivation of SiO2/Si Interfaces Using High-Pressure-H2O-Vapor Heating","display_name":"Passivation of SiO2/Si Interfaces Using High-Pressure-H2O-Vapor Heating","publication_year":2000,"publication_date":"2000-05-01","ids":{"openalex":"https://openalex.org/W2001237176","doi":"https://doi.org/10.1143/jjap.39.2492","mag":"2001237176"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.39.2492","doi":"https://doi.org/10.1143/jjap.39.2492","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.39.2492","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.39.2492/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.39.2492/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103407315","display_name":"Keiji Sakamoto","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I92614990","display_name":"Tokyo University of Agriculture and Technology","ror":"https://ror.org/00qg0kr10","country_code":"JP","type":"education","lineage":["https://openalex.org/I92614990"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Keiji Sakamoto Keiji Sakamoto","raw_affiliation_strings":["Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan","institution_ids":["https://openalex.org/I92614990"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5004287897","display_name":"Toshiyuki Sameshima","orcid":"https://orcid.org/0000-0003-2915-2385","observed_orcids":["https://orcid.org/0000-0003-2915-2385"]},"institutions":[{"id":"https://openalex.org/I92614990","display_name":"Tokyo University of Agriculture and Technology","ror":"https://ror.org/00qg0kr10","country_code":"JP","type":"education","lineage":["https://openalex.org/I92614990"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshiyuki Sameshima Toshiyuki Sameshima","raw_affiliation_strings":["Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan","institution_ids":["https://openalex.org/I92614990"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I92614990"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":1.6904,"has_fulltext":true,"cited_by_count":35,"citation_normalized_percentile":{"value":0.83049476,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"39","issue":"5R","first_page":"2492","last_page":"2492"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.8564000129699707,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.8564000129699707,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.121799997985363,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.007899999618530273,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-surface-passivation","display_name":"silicon surface passivation","score":0.6589999794960022},{"id":"https://openalex.org/keywords/siox-films","display_name":"SiOx films","score":0.6940000057220459},{"id":"https://openalex.org/keywords/dangling-bonds","display_name":"dangling bonds","score":0.7379999756813049},{"id":"https://openalex.org/keywords/surface-recombination-velocity","display_name":"surface recombination velocity","score":0.9539999961853027},{"id":"https://openalex.org/keywords/field-effect-passivation","display_name":"field-effect passivation","score":0.8489999771118164}],"concepts":[{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.7436728477478027},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6392173767089844},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6108187437057495},{"id":"https://openalex.org/C32424582","wikidata":"https://www.wikidata.org/wiki/Q5216183","display_name":"Dangling bond","level":3,"score":0.6097862720489502},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.6067055463790894},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.4952024519443512},{"id":"https://openalex.org/C61441594","wikidata":"https://www.wikidata.org/wiki/Q132814","display_name":"Evaporation","level":2,"score":0.4582156538963318},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2443057894706726},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.17315050959587097},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.15106484293937683},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.13704222440719604},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.13164693117141724},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.39.2492","doi":"https://doi.org/10.1143/jjap.39.2492","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.39.2492","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.39.2492/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1143/jjap.39.2492","doi":"https://doi.org/10.1143/jjap.39.2492","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.39.2492","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.39.2492/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2001237176.pdf","grobid_xml":"https://content.openalex.org/works/W2001237176.grobid-xml"},"referenced_works_count":10,"referenced_works":["https://openalex.org/W1584452406","https://openalex.org/W1965945772","https://openalex.org/W2002300630","https://openalex.org/W2004289622","https://openalex.org/W2052821798","https://openalex.org/W2055309078","https://openalex.org/W2078140165","https://openalex.org/W2089451866","https://openalex.org/W2146890124","https://openalex.org/W2166068345"],"related_works":["https://openalex.org/W2037096897","https://openalex.org/W2052821798","https://openalex.org/W2162362490","https://openalex.org/W1991047259","https://openalex.org/W7095873337","https://openalex.org/W2092626631","https://openalex.org/W2089451866","https://openalex.org/W2166068345","https://openalex.org/W2302324555","https://openalex.org/W1174305621"],"abstract_inverted_index":{"High-pressure":[0],"H2O":[1,48,183],"vapor":[2,136],"heating":[3,39],"was":[4,23,88,112,118,161],"used":[5],"for":[6,139],"the":[7,20,61,67,107,145,153,173],"passivation":[8,160],"of":[9,34,60,84,106,175],"silicon":[10,21,85,109],"surface.":[11],"The":[12,50,82,101,142],"thermally":[13],"evaporated":[14],"SiO":[15,115,165],"x":[16,116,166],"films":[17,117],"formed":[18,171],"on":[19],"surface":[22,103],"oxidized":[24],"and":[25,54,78,178],"Si\u2013O":[26,62],"bonding":[27],"density":[28,83],"increased":[29],"with":[30,37,44,114,132,181],"an":[31],"activation":[32],"energy":[33],"0.035":[35],"eV":[36],"increasing":[38],"temperature":[40],"upon":[41],"heat":[42,99,130,179],"treatment":[43,131,180],"1.0":[45],"\u00d7106":[46,134],"Pa":[47],"vapor.":[49,184],"peak":[51],"wave":[52],"number":[53],"full":[55],"width":[56],"at":[57,137],"half":[58],"maximum":[59],"absorption":[63],"band":[64],"due":[65],"to":[66,75,94,126],"Si\u2013O\u2013Si":[68],"antisymmetric":[69],"stretching":[70],"vibration":[71],"mode":[72],"were":[73],"changed":[74],"1077":[76],"cm-1":[77],"72":[79],"cm-1,":[80],"respectively.":[81],"dangling":[86],"bonds":[87],"reduced":[89,120],"from":[90,121],"2.0":[91],"\u00d71017(as":[92],"deposited)":[93,125],"1.4":[95],"\u00d71015":[96],"cm-3":[97],"by":[98,129,172],"treatment.":[100],"effective":[102],"recombination":[104,147],"velocity":[105,148],"p-type":[108],"wafer":[110],"that":[111],"coated":[113],"markedly":[119],"405":[122],"cm/s":[123,128],"(as":[124],"13":[127],"2.1":[133],"Pa-H2O":[135],"260\u00b0C":[138],"3":[140],"h.":[141],"interfaces":[143],"retained":[144],"low":[146],"8000":[149],"h":[150],"after":[151],"keeping":[152],"sample":[154],"in":[155],"air.":[156],"Effective":[157],"field":[158],"effect":[159],"demonstrated":[162],"using":[163],"a":[164],"/SiO2":[167],"double":[168],"layered":[169],"structure":[170],"combination":[174],"thermal":[176],"evaporation":[177],"high-pressure":[182]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":5},{"year":2014,"cited_by_count":4},{"year":2012,"cited_by_count":3}],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2016-06-24T00:00:00"}