{"id":"https://openalex.org/W2000839558","doi":"https://doi.org/10.1063/1.345340","title":"Effect of p/i interface layer on dark J-V characteristics and Voc in p-i-n a-Si solar cells","display_name":"Effect of p/i interface layer on dark J-V characteristics and Voc in p-i-n a-Si solar cells","publication_year":1990,"publication_date":"1990-04-01","ids":{"openalex":"https://openalex.org/W2000839558","doi":"https://doi.org/10.1063/1.345340","mag":"2000839558"},"language":"en","primary_location":{"id":"doi:10.1063/1.345340","doi":"https://doi.org/10.1063/1.345340","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.345340","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051247319","display_name":"Hiroshi Sakai","orcid":"https://orcid.org/0000-0002-5382-9379","observed_orcids":["https://orcid.org/0000-0002-5382-9379"]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Sakai","raw_affiliation_strings":["Fuji Electric Corporate Research and Development, Ltd., 2-2-1, Nagasaka, Yokosuka, Kanagawa 240-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fuji Electric Corporate Research and Development, Ltd., 2-2-1, Nagasaka, Yokosuka, Kanagawa 240-01, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078168903","display_name":"Tomoya Yoshida","orcid":"https://orcid.org/0000-0002-6239-3888","observed_orcids":["https://orcid.org/0000-0002-6239-3888"]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Yoshida","raw_affiliation_strings":["Fuji Electric Corporate Research and Development, Ltd., 2-2-1, Nagasaka, Yokosuka, Kanagawa 240-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fuji Electric Corporate Research and Development, Ltd., 2-2-1, Nagasaka, Yokosuka, Kanagawa 240-01, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016060813","display_name":"Shinji Fujikake","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Fujikake","raw_affiliation_strings":["Fuji Electric Corporate Research and Development, Ltd., 2-2-1, Nagasaka, Yokosuka, Kanagawa 240-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fuji Electric Corporate Research and Development, Ltd., 2-2-1, Nagasaka, Yokosuka, Kanagawa 240-01, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109063917","display_name":"T. Hama","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Hama","raw_affiliation_strings":["Fuji Electric Corporate Research and Development, Ltd., 2-2-1, Nagasaka, Yokosuka, Kanagawa 240-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fuji Electric Corporate Research and Development, Ltd., 2-2-1, Nagasaka, Yokosuka, Kanagawa 240-01, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103046737","display_name":"Yukimi Ichikawa","orcid":"https://orcid.org/0000-0002-3011-7977","observed_orcids":["https://orcid.org/0000-0002-3011-7977"]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Ichikawa","raw_affiliation_strings":["Fuji Electric Corporate Research and Development, Ltd., 2-2-1, Nagasaka, Yokosuka, Kanagawa 240-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fuji Electric Corporate Research and Development, Ltd., 2-2-1, Nagasaka, Yokosuka, Kanagawa 240-01, Japan","institution_ids":["https://openalex.org/I2799635668"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2799635668"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":1.9135,"has_fulltext":false,"cited_by_count":63,"citation_normalized_percentile":{"value":0.83470345,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"67","issue":"7","first_page":"3494","last_page":"3499"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9951000213623047,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9951000213623047,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.004100000020116568,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/open-circuit-voltage-degradation","display_name":"open-circuit voltage degradation","score":0.8379999995231628},{"id":"https://openalex.org/keywords/dark-current-voltage-characteristics","display_name":"dark current-voltage characteristics","score":0.9810000061988831},{"id":"https://openalex.org/keywords/recombination-current","display_name":"recombination current","score":0.8180000185966492},{"id":"https://openalex.org/keywords/interface-defects","display_name":"interface defects","score":0.5370000004768372},{"id":"https://openalex.org/keywords/i-layer-thickness","display_name":"i-layer thickness","score":0.6480000019073486},{"id":"https://openalex.org/keywords/band-gap","display_name":"band gap","score":0.5730000138282776},{"id":"https://openalex.org/keywords/bulk-recombination","display_name":"bulk recombination","score":0.5139999985694885}],"concepts":[{"id":"https://openalex.org/C180651308","wikidata":"https://www.wikidata.org/wiki/Q1265973","display_name":"Dark current","level":3,"score":0.7891554832458496},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6667765378952026},{"id":"https://openalex.org/C156695909","wikidata":"https://www.wikidata.org/wiki/Q3373825","display_name":"Recombination","level":3,"score":0.595657229423523},{"id":"https://openalex.org/C2780824857","wikidata":"https://www.wikidata.org/wiki/Q58803","display_name":"Solar cell","level":2,"score":0.5633678436279297},{"id":"https://openalex.org/C57631264","wikidata":"https://www.wikidata.org/wiki/Q1812203","display_name":"Open-circuit voltage","level":3,"score":0.5402820110321045},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.49508658051490784},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.44076472520828247},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4381329119205475},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4210788905620575},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3840472996234894},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3711335062980652},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.35999608039855957},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3526298999786377},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3461447060108185},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.33233964443206787},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1677331030368805},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.13768059015274048},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.07766568660736084},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C23125352","wikidata":"https://www.wikidata.org/wiki/Q210765","display_name":"Photodetector","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.345340","doi":"https://doi.org/10.1063/1.345340","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.345340","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.75,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1539358007","https://openalex.org/W1550542324","https://openalex.org/W2003915179","https://openalex.org/W2114181565"],"related_works":["https://openalex.org/W2081900248","https://openalex.org/W2104002698","https://openalex.org/W2062158910","https://openalex.org/W1883567893","https://openalex.org/W2328591540","https://openalex.org/W2054364525","https://openalex.org/W2062185737","https://openalex.org/W4300751577","https://openalex.org/W2316108966","https://openalex.org/W2146419711"],"abstract_inverted_index":{"Dark":[0],"current-voltage":[1],"(J-V)":[2],"characteristics":[3],"of":[4,15,48,74,82,86,89,100,108,117,128,132,148],"p-i-n":[5],"a-Si":[6,41,162],"solar":[7,42,64,163],"cells":[8,43,76,164],"are":[9],"studied":[10],"to":[11,115,172,175],"clarify":[12],"the":[13,16,21,29,33,40,59,63,71,75,78,96,105,109,118,125,129,133,137,141,145,149,157,161,166,176,180],"effect":[14,57],"p/i":[17,34,79,138,167],"interface":[18,35,80,119,139,168],"layer":[19,81,112,151,169],"on":[20,58],"open-circuit":[22],"voltage":[23],"(Voc).":[24],"It":[25,66],"is":[26,37,67,94,113,152,170],"shown":[27,69,171],"that":[28,70,99,116],"recombination":[30,134,142],"current":[31,72,127,135,143],"in":[32,39,62,103,123,144,179],"region":[36,147],"predominant":[38],"with":[44,77,165],"an":[45],"i-layer":[46],"thickness":[47,88],"less":[49],"than":[50,91],"200":[51],"nm":[52,93],"and":[53,140],"has":[54],"a":[55,87,101],"great":[56],"dark-current":[60],"transport":[61,73],"cells.":[65],"also":[68],"constant":[83],"band":[84,106],"gap":[85,107],"more":[90],"14":[92],"effectively":[95],"same":[97],"as":[98],"cell":[102,130],"which":[104,124],"whole":[110],"i":[111,150,181],"equal":[114],"layer.":[120,182],"A":[121],"model":[122],"dark":[126],"consists":[131],"at":[136],"bulk":[146],"proposed.":[153],"Using":[154],"this":[155],"model,":[156],"Voc":[158],"degradation":[159],"for":[160],"be":[173],"due":[174],"defects":[177],"generated":[178]},"counts_by_year":[{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":6},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}