{"id":"https://openalex.org/W2000794208","doi":"https://doi.org/10.1016/j.jcrysgro.2013.11.097","title":"Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs","display_name":"Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs","publication_year":2014,"publication_date":"2014-01-25","ids":{"openalex":"https://openalex.org/W2000794208","doi":"https://doi.org/10.1016/j.jcrysgro.2013.11.097","mag":"2000794208"},"language":"en","primary_location":{"id":"doi:10.1016/j.jcrysgro.2013.11.097","doi":"https://doi.org/10.1016/j.jcrysgro.2013.11.097","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.jcrysgro.2013.11.097","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5017999760","display_name":"A. E. Chernyakov","orcid":"https://orcid.org/0000-0002-8153-9512","observed_orcids":["https://orcid.org/0000-0002-8153-9512"]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I4210126858","display_name":"Submicron Heterostructures for Microelectronics Research and Engineering Center","ror":"https://ror.org/045dz4566","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210126858"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"A.E. Chernyakov","raw_affiliation_strings":["Science and Technology Center of Microelectronics and Submicrometer Heterostructures, RAS, St. Petersburg 194021, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Science and Technology Center of Microelectronics and Submicrometer Heterostructures, RAS, St. Petersburg 194021, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210126858"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017963404","display_name":"M. E. Levinshte\u012dn","orcid":"https://orcid.org/0000-0002-9712-7387","observed_orcids":["https://orcid.org/0000-0002-9712-7387"]},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"M.E. Levinshtein","raw_affiliation_strings":["Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024471616","display_name":"N A Talnishnikh","orcid":"https://orcid.org/0000-0003-1127-0973","observed_orcids":["https://orcid.org/0000-0003-1127-0973"]},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"N.A. Talnishnikh","raw_affiliation_strings":["Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030154040","display_name":"E. I. Shabunina","orcid":"https://orcid.org/0000-0003-4457-8149","observed_orcids":["https://orcid.org/0000-0003-4457-8149"]},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":true,"raw_author_name":"E.I. Shabunina","raw_affiliation_strings":["Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010163929","display_name":"Natalia M. Shmidt","orcid":"https://orcid.org/0000-0003-3585-5116","observed_orcids":["https://orcid.org/0000-0003-3585-5116"]},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"N.M. Shmidt","raw_affiliation_strings":["Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5030154040"],"corresponding_institution_ids":["https://openalex.org/I95568926"],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":0.4322,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.60043972,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"401","issue":null,"first_page":"302","last_page":"304"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10097","display_name":"Luminescence Properties of Advanced Materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/low-frequency-noise","display_name":"low-frequency noise","score":0.9879999756813049},{"id":"https://openalex.org/keywords/ingan-gan-leds","display_name":"InGaN/GaN LEDs","score":0.8799999952316284},{"id":"https://openalex.org/keywords/point-defects","display_name":"point defects","score":0.9990000128746033},{"id":"https://openalex.org/keywords/nonradiative-recombination","display_name":"nonradiative recombination","score":0.9990000128746033},{"id":"https://openalex.org/keywords/non-uniform-current-distribution","display_name":"non-uniform current distribution","score":0.949999988079071},{"id":"https://openalex.org/keywords/local-overheating","display_name":"local overheating","score":0.9649999737739563},{"id":"https://openalex.org/keywords/band-gap-narrowing","display_name":"band gap narrowing","score":0.6579999923706055}],"concepts":[{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.8946278691291809},{"id":"https://openalex.org/C2778284599","wikidata":"https://www.wikidata.org/wiki/Q25340000","display_name":"Overheating (electricity)","level":2,"score":0.7785899639129639},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7061209678649902},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6090864539146423},{"id":"https://openalex.org/C207240575","wikidata":"https://www.wikidata.org/wiki/Q212082","display_name":"Infrasound","level":2,"score":0.5352182388305664},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.48010873794555664},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.45876023173332214},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.26297640800476074},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13935166597366333},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0776490867137909},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.jcrysgro.2013.11.097","doi":"https://doi.org/10.1016/j.jcrysgro.2013.11.097","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.jcrysgro.2013.11.097","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1976068475","https://openalex.org/W1987920676","https://openalex.org/W2037719779","https://openalex.org/W2074285858","https://openalex.org/W2093178056","https://openalex.org/W2102111626","https://openalex.org/W2136970907","https://openalex.org/W3021705304","https://openalex.org/W6601647270"],"related_works":["https://openalex.org/W2156539613","https://openalex.org/W2037820657","https://openalex.org/W1994913640","https://openalex.org/W2093178056","https://openalex.org/W2050403809","https://openalex.org/W1996673419","https://openalex.org/W2588447485","https://openalex.org/W1988098144","https://openalex.org/W2243983492","https://openalex.org/W2044965685"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}