{"id":"https://openalex.org/W2000690109","doi":"https://doi.org/10.1063/1.94671","title":"Metal-amorphous silicon-silicon tunnel rectifier","display_name":"Metal-amorphous silicon-silicon tunnel rectifier","publication_year":1984,"publication_date":"1984-06-15","ids":{"openalex":"https://openalex.org/W2000690109","doi":"https://doi.org/10.1063/1.94671","mag":"2000690109"},"language":"en","primary_location":{"id":"doi:10.1063/1.94671","doi":"https://doi.org/10.1063/1.94671","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.94671","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101678356","display_name":"Edward S. Yang","orcid":"https://orcid.org/0000-0002-4545-0422","observed_orcids":["https://orcid.org/0000-0002-4545-0422"]},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E. S. Yang","raw_affiliation_strings":["Department of Electrical Engineering, Columbia University, New York, New York 10027"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Columbia University, New York, New York 10027","institution_ids":["https://openalex.org/I78577930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111529370","display_name":"Q.H. Hua","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Q. H. Hua","raw_affiliation_strings":["Department of Electrical Engineering, Columbia University, New York, New York 10027"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Columbia University, New York, New York 10027","institution_ids":["https://openalex.org/I78577930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101698860","display_name":"Di Yang","orcid":"https://orcid.org/0000-0002-0388-1734","observed_orcids":["https://orcid.org/0000-0002-0388-1734"]},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. K. Yang","raw_affiliation_strings":["Department of Electrical Engineering, Columbia University, New York, New York 10027"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Columbia University, New York, New York 10027","institution_ids":["https://openalex.org/I78577930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028241268","display_name":"Gailiang Yang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. S. Yang","raw_affiliation_strings":["Department of Electrical Engineering, Columbia University, New York, New York 10027"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Columbia University, New York, New York 10027","institution_ids":["https://openalex.org/I78577930"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5069937373","display_name":"Pui Shing Ho","orcid":"https://orcid.org/0000-0002-8082-4311","observed_orcids":["https://orcid.org/0000-0002-8082-4311"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. S. Ho","raw_affiliation_strings":["IBM T. J. Watson Research Center, Yorktown Heights, New York 10598"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights, New York 10598","institution_ids":["https://openalex.org/I4210114115"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.7904,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.66873545,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"44","issue":"12","first_page":"1144","last_page":"1146"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8579000234603882,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8579000234603882,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.048900000751018524,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.026900000870227814,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amorphous-silicon","display_name":"amorphous silicon","score":0.8259999752044678},{"id":"https://openalex.org/keywords/metal-semiconductor-junction","display_name":"metal-semiconductor contacts","score":0.7950000166893005},{"id":"https://openalex.org/keywords/thin-film-diodes","display_name":"thin film diodes","score":0.9660000205039978},{"id":"https://openalex.org/keywords/reverse-breakdown-voltage","display_name":"reverse breakdown voltage","score":0.9139999747276306},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.7419999837875366},{"id":"https://openalex.org/keywords/auger-depth-profiles","display_name":"Auger depth profiles","score":0.8069999814033508},{"id":"https://openalex.org/keywords/interfacial-layer","display_name":"interfacial layer","score":0.8429999947547913},{"id":"https://openalex.org/keywords/p-n-junction","display_name":"p-n junction","score":0.6949999928474426}],"concepts":[{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7745805382728577},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.7099367380142212},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6967098712921143},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.6902317404747009},{"id":"https://openalex.org/C2780646311","wikidata":"https://www.wikidata.org/wiki/Q1142501","display_name":"Auger","level":2,"score":0.6189210414886475},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6161141991615295},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5517157316207886},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.5402175784111023},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.5219337940216064},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.511840283870697},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.46160924434661865},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.22149717807769775},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20330053567886353},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.08922508358955383},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1063/1.94671","doi":"https://doi.org/10.1063/1.94671","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.94671","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},{"id":"pmh:oai:hub.hku.hk:10722/154830","doi":null,"is_oa":false,"landing_page_url":"http://hdl.handle.net/10722/154830","pdf_url":null,"source":{"id":"https://openalex.org/S4377196271","display_name":"The HKU Scholars Hub (University of Hong Kong)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I889458895","host_organization_name":"University of Hong Kong","host_organization_lineage":["https://openalex.org/I889458895"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1968666095","https://openalex.org/W1980690515","https://openalex.org/W2039529604","https://openalex.org/W2074821454"],"related_works":["https://openalex.org/W1968795808","https://openalex.org/W2130451625","https://openalex.org/W2025852899","https://openalex.org/W2048821914","https://openalex.org/W2059987298","https://openalex.org/W2013994623","https://openalex.org/W4410044047","https://openalex.org/W1994715877","https://openalex.org/W2171341264","https://openalex.org/W2008020105"],"abstract_inverted_index":{"We":[0],"report":[1],"a":[2,15],"new":[3],"metal-semiconductor":[4],"thin-film":[5],"diode":[6],"with":[7],"an":[8],"I-V":[9,40],"characteristic":[10],"similar":[11],"to":[12],"that":[13],"of":[14,47],"p-n":[16],"junction.":[17],"Its":[18],"forward":[19],"bias":[20],"current":[21],"is":[22,32],"dominated":[23],"by":[24],"majority-carrier":[25],"tunneling,":[26],"and":[27,42],"its":[28],"reverse":[29],"breakdown":[30],"voltage":[31],"over":[33],"50":[34],"V.":[35],"The":[36],"fabrication":[37],"process,":[38],"the":[39,43,48],"curves,":[41],"Auger":[44],"depth":[45],"profile":[46],"interfacial":[49],"layer":[50],"are":[51],"presented.":[52]},"counts_by_year":[],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}