{"id":"https://openalex.org/W2000602127","doi":"https://doi.org/10.1007/s00339-010-5991-7","title":"Deposition and properties of highly C-oriented GaN films on diamond substrates","display_name":"Deposition and properties of highly C-oriented GaN films on diamond substrates","publication_year":2010,"publication_date":"2010-08-25","ids":{"openalex":"https://openalex.org/W2000602127","doi":"https://doi.org/10.1007/s00339-010-5991-7","mag":"2000602127"},"language":"en","primary_location":{"id":"doi:10.1007/s00339-010-5991-7","doi":"https://doi.org/10.1007/s00339-010-5991-7","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s00339-010-5991-7","pdf_url":null,"source":{"id":"https://openalex.org/S52123058","display_name":"Applied Physics A","issn_l":"0947-8396","issn":["0947-8396","1432-0630"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-class-a","anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics A","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W2000602127"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101914206","display_name":"Dong Zhang","orcid":"https://orcid.org/0000-0002-0993-207X","observed_orcids":["https://orcid.org/0000-0002-0993-207X"]},"institutions":[{"id":"https://openalex.org/I27357992","display_name":"Dalian University of Technology","ror":"https://ror.org/023hj5876","country_code":"CN","type":"education","lineage":["https://openalex.org/I27357992"]},{"id":"https://openalex.org/I4405271909","display_name":"Key Laboratory of Materials Modification by Laser, Ion and Electron Beams","ror":"https://ror.org/038beqt86","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4405271909"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dong Zhang","raw_affiliation_strings":["Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, 116024, China","School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, 116024, China","institution_ids":["https://openalex.org/I27357992","https://openalex.org/I4405271909"]},{"raw_affiliation_string":"School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China","institution_ids":["https://openalex.org/I27357992"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102092828","display_name":"Yizhen Bai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I27357992","display_name":"Dalian University of Technology","ror":"https://ror.org/023hj5876","country_code":"CN","type":"education","lineage":["https://openalex.org/I27357992"]},{"id":"https://openalex.org/I4405271909","display_name":"Key Laboratory of Materials Modification by Laser, Ion and Electron Beams","ror":"https://ror.org/038beqt86","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4405271909"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Yizhen Bai","raw_affiliation_strings":["Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, 116024, China","School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, 116024, China","institution_ids":["https://openalex.org/I27357992","https://openalex.org/I4405271909"]},{"raw_affiliation_string":"School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China","institution_ids":["https://openalex.org/I27357992"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008652602","display_name":"Fuwen Qin","orcid":"https://orcid.org/0009-0008-0451-6641","observed_orcids":["https://orcid.org/0009-0008-0451-6641"]},"institutions":[{"id":"https://openalex.org/I27357992","display_name":"Dalian University of Technology","ror":"https://ror.org/023hj5876","country_code":"CN","type":"education","lineage":["https://openalex.org/I27357992"]},{"id":"https://openalex.org/I4405271909","display_name":"Key Laboratory of Materials Modification by Laser, Ion and Electron Beams","ror":"https://ror.org/038beqt86","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4405271909"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fuwen Qin","raw_affiliation_strings":["Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, 116024, China","School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, 116024, China","institution_ids":["https://openalex.org/I27357992","https://openalex.org/I4405271909"]},{"raw_affiliation_string":"School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China","institution_ids":["https://openalex.org/I27357992"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101161546","display_name":"Fuchao Jia","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I27357992","display_name":"Dalian University of Technology","ror":"https://ror.org/023hj5876","country_code":"CN","type":"education","lineage":["https://openalex.org/I27357992"]},{"id":"https://openalex.org/I4405271909","display_name":"Key Laboratory of Materials Modification by Laser, Ion and Electron Beams","ror":"https://ror.org/038beqt86","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4405271909"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fuchao Jia","raw_affiliation_strings":["Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, 116024, China","School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, 116024, China","institution_ids":["https://openalex.org/I27357992","https://openalex.org/I4405271909"]},{"raw_affiliation_string":"School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China","institution_ids":["https://openalex.org/I27357992"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100370371","display_name":"Jian Wang","orcid":"https://orcid.org/0000-0001-9005-4077","observed_orcids":["https://orcid.org/0000-0001-9005-4077"]},"institutions":[{"id":"https://openalex.org/I27357992","display_name":"Dalian University of Technology","ror":"https://ror.org/023hj5876","country_code":"CN","type":"education","lineage":["https://openalex.org/I27357992"]},{"id":"https://openalex.org/I4405271909","display_name":"Key Laboratory of Materials Modification by Laser, Ion and Electron Beams","ror":"https://ror.org/038beqt86","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4405271909"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jian Wang","raw_affiliation_strings":["Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, 116024, China","School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, 116024, China","institution_ids":["https://openalex.org/I27357992","https://openalex.org/I4405271909"]},{"raw_affiliation_string":"School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China","institution_ids":["https://openalex.org/I27357992"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5082196739","display_name":"Jiming Bian","orcid":"https://orcid.org/0000-0002-4912-7606","observed_orcids":["https://orcid.org/0000-0002-4912-7606"]},"institutions":[{"id":"https://openalex.org/I27357992","display_name":"Dalian University of Technology","ror":"https://ror.org/023hj5876","country_code":"CN","type":"education","lineage":["https://openalex.org/I27357992"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiming Bian","raw_affiliation_strings":["School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China","institution_ids":["https://openalex.org/I27357992"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5102092828"],"corresponding_institution_ids":["https://openalex.org/I27357992","https://openalex.org/I4405271909"],"apc_list":{"value":3790,"currency":"USD","value_usd":3790},"apc_paid":null,"fwci":0.5315,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.60893745,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":95},"biblio":{"volume":"102","issue":"2","first_page":"353","last_page":"358"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.8974999785423279,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.8974999785423279,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.0803999975323677,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","score":0.017799999564886093,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gan-thin-films","display_name":"GaN thin films","score":0.8920000195503235},{"id":"https://openalex.org/keywords/diamond-substrates","display_name":"diamond substrates","score":0.8930000066757202},{"id":"https://openalex.org/keywords/free-standing-diamond-films","display_name":"free-standing diamond films","score":0.8640000224113464},{"id":"https://openalex.org/keywords/c-axis-orientation","display_name":"c-axis orientation","score":0.8349999785423279},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"surface roughness","score":0.8330000042915344},{"id":"https://openalex.org/keywords/surface-acoustic-wave-devices","display_name":"surface acoustic wave devices","score":0.9369999766349792}],"concepts":[{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.7883671522140503},{"id":"https://openalex.org/C2776921476","wikidata":"https://www.wikidata.org/wiki/Q5283","display_name":"Diamond","level":2,"score":0.7402735352516174},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7354238033294678},{"id":"https://openalex.org/C200096950","wikidata":"https://www.wikidata.org/wiki/Q455003","display_name":"Reflection high-energy electron diffraction","level":4,"score":0.7196471095085144},{"id":"https://openalex.org/C175361016","wikidata":"https://www.wikidata.org/wiki/Q245591","display_name":"Electron cyclotron resonance","level":3,"score":0.649479866027832},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.5000772476196289},{"id":"https://openalex.org/C77557913","wikidata":"https://www.wikidata.org/wiki/Q864822","display_name":"Electron diffraction","level":3,"score":0.49387484788894653},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.47332462668418884},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4646790325641632},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.4334483742713928},{"id":"https://openalex.org/C71039073","wikidata":"https://www.wikidata.org/wiki/Q3439090","display_name":"Surface finish","level":2,"score":0.4293840527534485},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.360478937625885},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.31410151720046997},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.24890130758285522},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.2318536341190338},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.18773820996284485},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.17064741253852844},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.13606667518615723},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.059828490018844604},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/s00339-010-5991-7","doi":"https://doi.org/10.1007/s00339-010-5991-7","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s00339-010-5991-7","pdf_url":null,"source":{"id":"https://openalex.org/S52123058","display_name":"Applied Physics A","issn_l":"0947-8396","issn":["0947-8396","1432-0630"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-class-a","anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics A","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W2000915507","https://openalex.org/W2011036425","https://openalex.org/W2013268869","https://openalex.org/W2031920770","https://openalex.org/W2032233506","https://openalex.org/W2050345644","https://openalex.org/W2058110193","https://openalex.org/W2077841048","https://openalex.org/W2080317605","https://openalex.org/W2085654342","https://openalex.org/W2112867409","https://openalex.org/W2132426285","https://openalex.org/W2139866045","https://openalex.org/W2159383808","https://openalex.org/W6726381313","https://openalex.org/W6837145454"],"related_works":["https://openalex.org/W2009140000","https://openalex.org/W1969898806","https://openalex.org/W4238889201","https://openalex.org/W2014018475","https://openalex.org/W1971594758","https://openalex.org/W2003277454","https://openalex.org/W2031920770","https://openalex.org/W2001575705","https://openalex.org/W2006023360","https://openalex.org/W2066977958"],"abstract_inverted_index":null,"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":2}],"updated_date":"2026-09-22T17:25:34.749102","created_date":"2016-06-24T00:00:00"}