{"id":"https://openalex.org/W2000595918","doi":"https://doi.org/10.1116/1.4896593","title":"Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area","display_name":"Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area","publication_year":2014,"publication_date":"2014-10-03","ids":{"openalex":"https://openalex.org/W2000595918","doi":"https://doi.org/10.1116/1.4896593","mag":"2000595918"},"language":"en","primary_location":{"id":"doi:10.1116/1.4896593","doi":"https://doi.org/10.1116/1.4896593","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.4896593","pdf_url":null,"source":{"id":"https://openalex.org/S4210235835","display_name":"Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena","issn_l":"2166-2746","issn":["2166-2746","2166-2754"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5001602795","display_name":"Ya-Hsi Hwang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ya-Hsi Hwang","raw_affiliation_strings":["University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111632995","display_name":"Tsung-Sheng Kang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Tsung-Sheng Kang","raw_affiliation_strings":["University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100641969","display_name":"Fan Ren","orcid":"https://orcid.org/0000-0001-9234-019X","observed_orcids":["https://orcid.org/0000-0001-9234-019X"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Fan Ren","raw_affiliation_strings":["University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085381025","display_name":"S. J. Pearton","orcid":"https://orcid.org/0000-0001-6498-1256","observed_orcids":["https://orcid.org/0000-0001-6498-1256"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Stephen J. Pearton","raw_affiliation_strings":["University of Florida Materials Science and Engineering, , Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Florida Materials Science and Engineering, , Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I33213144"],"apc_list":null,"apc_paid":null,"fwci":0.6422,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.64556051,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"32","issue":"6","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9940999746322632,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9940999746322632,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.006000000052154064,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/algan-gan-high-electron-mobility-transistors","display_name":"AlGaN/GaN HEMT","score":0.9430000185966492},{"id":"https://openalex.org/keywords/heat-dissipation","display_name":"heat dissipation","score":0.9139999747276306},{"id":"https://openalex.org/keywords/copper-plating","display_name":"copper plating","score":0.6370000243186951},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"junction temperature","score":0.6069999933242798},{"id":"https://openalex.org/keywords/aln-nucleation-layer","display_name":"AlN nucleation layer","score":0.9169999957084656},{"id":"https://openalex.org/keywords/lattice-mismatch","display_name":"lattice mismatch","score":0.7250000238418579},{"id":"https://openalex.org/keywords/drain-breakdown-voltage","display_name":"drain breakdown voltage","score":0.9129999876022339},{"id":"https://openalex.org/keywords/back-gate","display_name":"back gate","score":0.765999972820282},{"id":"https://openalex.org/keywords/gan-on-si","display_name":"GaN-on-Si","score":0.5199999809265137}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8435298204421997},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.729651689529419},{"id":"https://openalex.org/C61048295","wikidata":"https://www.wikidata.org/wiki/Q909022","display_name":"Nucleation","level":2,"score":0.6855614185333252},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5843244194984436},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5533643364906311},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.5284257531166077},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5262921452522278},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.49187707901000977},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.4174855351448059},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2118854522705078},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16755184531211853},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1511918008327484},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.4896593","doi":"https://doi.org/10.1116/1.4896593","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.4896593","pdf_url":null,"source":{"id":"https://openalex.org/S4210235835","display_name":"Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena","issn_l":"2166-2746","issn":["2166-2746","2166-2754"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320306078","display_name":"U.S. Department of Defense","ror":"https://ror.org/0447fe631"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1985616117","https://openalex.org/W2044485189","https://openalex.org/W2067407700","https://openalex.org/W2070890031","https://openalex.org/W2096074167","https://openalex.org/W2106703283","https://openalex.org/W2111429915","https://openalex.org/W2129795587","https://openalex.org/W2135780270"],"related_works":["https://openalex.org/W2176301387","https://openalex.org/W2970826769","https://openalex.org/W2943914256","https://openalex.org/W3011385351","https://openalex.org/W2614768675","https://openalex.org/W2997557234","https://openalex.org/W1991580832","https://openalex.org/W4360832145","https://openalex.org/W2342339541","https://openalex.org/W4281709984"],"abstract_inverted_index":{"A":[0],"through":[1,63,123,161],"Si-substrate":[2,64,124,162],"via-hole":[3,65,125,163],"under":[4],"the":[5,19,25,74,78,89,94,115,120,131,144,149,155,167],"active":[6],"area":[7],"of":[8,77,110,119],"GaN-based":[9],"HEMTs":[10],"grown":[11],"on":[12,48],"Si":[13,30,49],"substrates":[14],"is":[15,55,164],"proposed":[16,62],"to":[17,24,44,68,103,130,142,166,179],"reduce":[18,143],"maximum":[20,95,116,145],"junction":[21,96,117],"temperature.":[22],"Due":[23],"large":[26],"lattice":[27],"mismatch":[28],"between":[29],"and":[31,37,58,87,134,152],"GaN,":[32],"an":[33,38],"AlN":[34,52,70],"nucleation":[35,53,71],"layer":[36,41,54,72,86],"AlGaN":[39],"transition":[40],"are":[42],"required":[43],"grow":[45],"GaN":[46],"layers":[47],"substrates.":[50],"This":[51],"very":[56],"defective":[57],"thermally":[59,84],"resistive.":[60],"The":[61],"offers":[66],"access":[67],"this":[69,82,122,160],"from":[73,101],"back":[75,177],"side":[76],"wafer.":[79],"By":[80],"removing":[81],"highly":[83],"resistive":[85],"plating":[88],"via":[90],"hole":[91],"with":[92],"copper,":[93],"temperature":[97,118],"can":[98,126,172],"be":[99,127],"reduced":[100],"146":[102],"120":[104],"\u00b0C":[105],"at":[106],"a":[107,137,176],"power":[108],"density":[109],"5":[111],"W/mm.":[112],"Besides":[113],"reducing":[114],"HEMT,":[121],"electrically":[128],"connected":[129,165],"source":[132,139],"contact":[133],"act":[135],"as":[136,175],"backside":[138],"field":[140,147],"plate":[141],"electric":[146],"around":[148],"gate":[150,169,178,182],"edges":[151],"thereby":[153],"increase":[154],"drain":[156],"breakdown":[157],"voltage.":[158],"If":[159],"front":[168,181],"pad,":[170],"it":[171],"also":[173],"behave":[174],"improve":[180],"modulation.":[183]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}