{"id":"https://openalex.org/W2000473894","doi":"https://doi.org/10.1002/pssb.200880508","title":"Application of piezoresistance effect in highly uniaxially strained p\u2010Si and n\u2010Si for current\u2010carrier mobility increase","display_name":"Application of piezoresistance effect in highly uniaxially strained p\u2010Si and n\u2010Si for current\u2010carrier mobility increase","publication_year":2008,"publication_date":"2008-12-19","ids":{"openalex":"https://openalex.org/W2000473894","doi":"https://doi.org/10.1002/pssb.200880508","mag":"2000473894"},"language":"en","primary_location":{"id":"doi:10.1002/pssb.200880508","doi":"https://doi.org/10.1002/pssb.200880508","is_oa":false,"landing_page_url":"https://doi.org/10.1002/pssb.200880508","pdf_url":null,"source":{"id":"https://openalex.org/S71689831","display_name":"physica status solidi (b)","issn_l":"0370-1972","issn":["0370-1972","1521-3951"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"physica status solidi (b)","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://doi.org/10.1002/pssb.200880508","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051069429","display_name":"V. V. Kolomoets","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210107754","display_name":"V.E. Lashkaryov Institute of Semiconductor Physics","ror":"https://ror.org/01qfgm256","country_code":"UA","type":"facility","lineage":["https://openalex.org/I149851306","https://openalex.org/I4210107754"]}],"countries":["UA"],"is_corresponding":true,"raw_author_name":"Volodymyr Kolomoets","raw_affiliation_strings":["V. Lashkaryov Institute of Semiconductor Physics, pr. Nauky 41, Kyiv 03028, Ukraine"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"V. Lashkaryov Institute of Semiconductor Physics, pr. Nauky 41, Kyiv 03028, Ukraine","institution_ids":["https://openalex.org/I4210107754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018946705","display_name":"V. V. Baidakov","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210107754","display_name":"V.E. Lashkaryov Institute of Semiconductor Physics","ror":"https://ror.org/01qfgm256","country_code":"UA","type":"facility","lineage":["https://openalex.org/I149851306","https://openalex.org/I4210107754"]}],"countries":["UA"],"is_corresponding":false,"raw_author_name":"Valentyn Baidakov","raw_affiliation_strings":["V. Lashkaryov Institute of Semiconductor Physics, pr. Nauky 41, Kyiv 03028, Ukraine"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"V. Lashkaryov Institute of Semiconductor Physics, pr. Nauky 41, Kyiv 03028, Ukraine","institution_ids":["https://openalex.org/I4210107754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026168016","display_name":"\u0410. \u0412. \u0424\u0435\u0434\u043e\u0441\u043e\u0432","orcid":"https://orcid.org/0000-0002-8813-696X","observed_orcids":["https://orcid.org/0000-0002-8813-696X"]},"institutions":[{"id":"https://openalex.org/I4210107754","display_name":"V.E. Lashkaryov Institute of Semiconductor Physics","ror":"https://ror.org/01qfgm256","country_code":"UA","type":"facility","lineage":["https://openalex.org/I149851306","https://openalex.org/I4210107754"]}],"countries":["UA"],"is_corresponding":false,"raw_author_name":"Anatolii Fedosov","raw_affiliation_strings":["V. Lashkaryov Institute of Semiconductor Physics, pr. Nauky 41, Kyiv 03028, Ukraine"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"V. Lashkaryov Institute of Semiconductor Physics, pr. Nauky 41, Kyiv 03028, Ukraine","institution_ids":["https://openalex.org/I4210107754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017897359","display_name":"Andrii Gorin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210107754","display_name":"V.E. Lashkaryov Institute of Semiconductor Physics","ror":"https://ror.org/01qfgm256","country_code":"UA","type":"facility","lineage":["https://openalex.org/I149851306","https://openalex.org/I4210107754"]}],"countries":["UA"],"is_corresponding":false,"raw_author_name":"Andrii Gorin","raw_affiliation_strings":["V. Lashkaryov Institute of Semiconductor Physics, pr. Nauky 41, Kyiv 03028, Ukraine"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"V. Lashkaryov Institute of Semiconductor Physics, pr. Nauky 41, Kyiv 03028, Ukraine","institution_ids":["https://openalex.org/I4210107754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102090603","display_name":"V. M. Ermakov","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210107754","display_name":"V.E. Lashkaryov Institute of Semiconductor Physics","ror":"https://ror.org/01qfgm256","country_code":"UA","type":"facility","lineage":["https://openalex.org/I149851306","https://openalex.org/I4210107754"]}],"countries":["UA"],"is_corresponding":false,"raw_author_name":"Valerii Ermakov","raw_affiliation_strings":["V. Lashkaryov Institute of Semiconductor Physics, pr. Nauky 41, Kyiv 03028, Ukraine"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"V. Lashkaryov Institute of Semiconductor Physics, pr. Nauky 41, Kyiv 03028, Ukraine","institution_ids":["https://openalex.org/I4210107754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011922289","display_name":"E. Liarokapis","orcid":"https://orcid.org/0000-0001-8061-4819","observed_orcids":["https://orcid.org/0000-0001-8061-4819"]},"institutions":[{"id":"https://openalex.org/I174458059","display_name":"National Technical University of Athens","ror":"https://ror.org/03cx6bg69","country_code":"GR","type":"education","lineage":["https://openalex.org/I174458059"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"Efthymios Liarokapis","raw_affiliation_strings":["National Technical University of Athens, Department of Physics, Zografou Campus, 15773 Athens, Greece"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Technical University of Athens, Department of Physics, Zografou Campus, 15773 Athens, Greece","institution_ids":["https://openalex.org/I174458059"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014169184","display_name":"Galina Gromova","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Galina Gromova","raw_affiliation_strings":["Ak-Tau State University, Kasakhstan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ak-Tau State University, Kasakhstan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021343770","display_name":"B.K. Kazbekova","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"B. Kazbekova","raw_affiliation_strings":["Ak-Tau State University, Kasakhstan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ak-Tau State University, Kasakhstan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074957491","display_name":"L. U. Taimuratova","orcid":"https://orcid.org/0000-0002-1692-4350","observed_orcids":["https://orcid.org/0000-0002-1692-4350"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"L. Taimuratova","raw_affiliation_strings":["Ak-Tau State University, Kasakhstan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ak-Tau State University, Kasakhstan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075921160","display_name":"B. Orasgulyev","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"B. Orasgulyev","raw_affiliation_strings":["Ak-Tau State University, Kasakhstan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ak-Tau State University, Kasakhstan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5051069429"],"corresponding_institution_ids":["https://openalex.org/I4210107754"],"apc_list":{"value":3650,"currency":"USD","value_usd":3650},"apc_paid":null,"fwci":0.2736,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.60551692,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"246","issue":"3","first_page":"652","last_page":"654"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8393999934196472,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8393999934196472,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.11699999868869781,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.01510000042617321,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/piezoresistive-effect","display_name":"piezoresistivity","score":0.9599999785423279},{"id":"https://openalex.org/keywords/uniaxial-strain","display_name":"uniaxial strain","score":0.9559999704360962},{"id":"https://openalex.org/keywords/silicon","display_name":"silicon","score":0.746999979019165},{"id":"https://openalex.org/keywords/p-type-silicon","display_name":"p-type silicon","score":0.671999990940094},{"id":"https://openalex.org/keywords/n-type-silicon","display_name":"n-type silicon","score":1.0},{"id":"https://openalex.org/keywords/heavy-hole-effective-mass","display_name":"heavy hole effective mass","score":0.8349999785423279}],"concepts":[{"id":"https://openalex.org/C85725439","wikidata":"https://www.wikidata.org/wiki/Q466686","display_name":"Anisotropy","level":2,"score":0.7532199621200562},{"id":"https://openalex.org/C154954056","wikidata":"https://www.wikidata.org/wiki/Q1604164","display_name":"Transverse plane","level":2,"score":0.7409293055534363},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7128088474273682},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.6120957136154175},{"id":"https://openalex.org/C179764930","wikidata":"https://www.wikidata.org/wiki/Q3509437","display_name":"Effective mass (spring\u2013mass system)","level":2,"score":0.5664141774177551},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5354699492454529},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.5036141276359558},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.46627452969551086},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.41826456785202026},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.20860794186592102},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.15584802627563477},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13411745429039001},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.12859201431274414},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.06250515580177307},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1002/pssb.200880508","doi":"https://doi.org/10.1002/pssb.200880508","is_oa":false,"landing_page_url":"https://doi.org/10.1002/pssb.200880508","pdf_url":null,"source":{"id":"https://openalex.org/S71689831","display_name":"physica status solidi (b)","issn_l":"0370-1972","issn":["0370-1972","1521-3951"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"physica status solidi (b)","raw_type":"journal-article"},{"id":"pmh:oai:dspace.lib.ntua.gr:123456789/19385","doi":null,"is_oa":true,"landing_page_url":"http://doi.org/10.1002/pssb.200880508","pdf_url":null,"source":{"id":"https://openalex.org/S4377196837","display_name":"DSpace - NTUA (National Technical University of Athens)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I174458059","host_organization_name":"National Technical University of Athens","host_organization_lineage":["https://openalex.org/I174458059"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Physica Status Solidi (B) Basic Research","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":{"id":"pmh:oai:dspace.lib.ntua.gr:123456789/19385","doi":null,"is_oa":true,"landing_page_url":"http://doi.org/10.1002/pssb.200880508","pdf_url":null,"source":{"id":"https://openalex.org/S4377196837","display_name":"DSpace - NTUA (National Technical University of Athens)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I174458059","host_organization_name":"National Technical University of Athens","host_organization_lineage":["https://openalex.org/I174458059"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Physica Status Solidi (B) Basic Research","raw_type":"info:eu-repo/semantics/article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W183462295"],"related_works":["https://openalex.org/W2086864551","https://openalex.org/W2895607463","https://openalex.org/W2115603652","https://openalex.org/W2118294059","https://openalex.org/W4237827199","https://openalex.org/W4232309876","https://openalex.org/W4403359696","https://openalex.org/W2059400675","https://openalex.org/W1989103472","https://openalex.org/W2072986678"],"abstract_inverted_index":{"Abstract":[0],"Uniaxially":[1],"strained":[2,35],"channels":[3],"occur":[4],"in":[5,32],"silicon":[6],"p\u2010MOS":[7],"transistors":[8,11],"and":[9,18,28,37,51,72,83,103,118],"n\u2010MOS":[10],"(IEDM":[12],"Tech.":[13],"Dig.,":[14],"pp.":[15,19],"61\u201364":[16],"(2002)":[17],"978\u2013980":[20],"(2003)":[21],"[1,":[22],"2]).":[23],"Both":[24],"longitudinal":[25,49,81],"piezoresistance":[26],"(PR)":[27],"transverse":[29,52,84],"PR":[30,50,53,82,85],"investigation":[31],"highly":[33],"uniaxially":[34],"p\u2010Si(B)":[36],"n\u2010Si(P)":[38],"are":[39,54],"presented.":[40],"It":[41],"is":[42,90],"shown":[43],"that":[44],"the":[45,57,66,77,80,94,97,104,109,112],"strong":[46],"anisotropy":[47],"of":[48,60,68,79,96,106],"caused":[55],"by":[56,65,92],"pressure\u2010induced":[58],"change":[59,67,78,95],"isoenergetic":[61],"surface":[62],"shape,":[63],"i.e.":[64],"heavy\u2010hole":[69],"effective":[70,113],"mass":[71,114],"its":[73],"anisotropy.":[74],"In":[75],"n\u2010Si":[76],"at":[86],"X":[87],"\u2225":[88],"[100]":[89],"determined":[91],"both":[93],"f\u2010transition":[98],"probability":[99],"with":[100,111],"increasing":[101],"pressure":[102],"redistribution":[105],"electrons":[107],"between":[108],"valleys":[110],"m\u2225":[115],"(longitudinal":[116],"PR)":[117],"m\u22a5":[119],"(transverse":[120],"PR).":[121],"(\u00a9":[122],"2009":[123],"WILEY\u2010VCH":[124],"Verlag":[125],"GmbH":[126],"&":[127],"Co.":[128],"KGaA,":[129],"Weinheim)":[130]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-06T12:05:46.655746","created_date":"2016-06-24T00:00:00"}