{"id":"https://openalex.org/W2000445137","doi":"https://doi.org/10.1063/1.343113","title":"Residual strains in heteroepitaxial III-V semiconductor films on Si(100) substrates","display_name":"Residual strains in heteroepitaxial III-V semiconductor films on Si(100) substrates","publication_year":1989,"publication_date":"1989-01-15","ids":{"openalex":"https://openalex.org/W2000445137","doi":"https://doi.org/10.1063/1.343113","mag":"2000445137"},"language":"en","primary_location":{"id":"doi:10.1063/1.343113","doi":"https://doi.org/10.1063/1.343113","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.343113","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111738576","display_name":"Mitsuru Sugo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Mitsuru Sugo","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1, Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1, Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111836176","display_name":"Naoto Uchida","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Naoto Uchida","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1, Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1, Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088549337","display_name":"Akio Yamamoto","orcid":"https://orcid.org/0000-0002-7409-3938","observed_orcids":["https://orcid.org/0000-0002-7409-3938"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akio Yamamoto","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1, Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1, Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064094598","display_name":"Takashi Nishioka","orcid":"https://orcid.org/0000-0002-1144-3881","observed_orcids":["https://orcid.org/0000-0002-1144-3881"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takashi Nishioka","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1, Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1, Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5039544331","display_name":"Masafumi Yamaguchi","orcid":"https://orcid.org/0000-0002-2825-7217","observed_orcids":["https://orcid.org/0000-0002-2825-7217","https://orcid.org/0000-0002-5601-4749"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masafumi Yamaguchi","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1, Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1, Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2251713219"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":5.3965,"has_fulltext":false,"cited_by_count":64,"citation_normalized_percentile":{"value":0.9669981,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"65","issue":"2","first_page":"591","last_page":"595"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.701200008392334,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.701200008392334,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.11500000208616257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.09849999845027924,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/residual-strain","display_name":"residual strain","score":0.9929999709129333},{"id":"https://openalex.org/keywords/heteroepitaxy","display_name":"heteroepitaxy","score":0.9470000267028809},{"id":"https://openalex.org/keywords/iii-v-on-silicon","display_name":"III-V on silicon","score":0.890999972820282},{"id":"https://openalex.org/keywords/si-100-substrate","display_name":"Si(100) substrate","score":0.902999997138977},{"id":"https://openalex.org/keywords/gap","display_name":"GaP","score":0.7860000133514404},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"GaAs","score":1.0},{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"indium phosphide","score":0.996999979019165},{"id":"https://openalex.org/keywords/lattice-mismatch","display_name":"lattice mismatch","score":0.8550000190734863},{"id":"https://openalex.org/keywords/thermal-expansion","display_name":"thermal expansion","score":0.7239999771118164},{"id":"https://openalex.org/keywords/misfit-dislocations","display_name":"misfit dislocations","score":0.8920000195503235},{"id":"https://openalex.org/keywords/strain-relaxation","display_name":"strain relaxation","score":0.4909999966621399},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.7699999809265137},{"id":"https://openalex.org/keywords/film-thickness-dependence","display_name":"film thickness dependence","score":0.5950000286102295}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8047734498977661},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6025780439376831},{"id":"https://openalex.org/C112950240","wikidata":"https://www.wikidata.org/wiki/Q76005","display_name":"Ultimate tensile strength","level":2,"score":0.5727498531341553},{"id":"https://openalex.org/C47463417","wikidata":"https://www.wikidata.org/wiki/Q6583695","display_name":"Thermal expansion","level":2,"score":0.5441268086433411},{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.5297749042510986},{"id":"https://openalex.org/C37292000","wikidata":"https://www.wikidata.org/wiki/Q1257918","display_name":"Residual stress","level":2,"score":0.46764135360717773},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4663761258125305},{"id":"https://openalex.org/C2778288408","wikidata":"https://www.wikidata.org/wiki/Q421416","display_name":"Gallium phosphide","level":2,"score":0.4447176158428192},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.43762916326522827},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.43598172068595886},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.41070687770843506},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.22100093960762024},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1146140992641449},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.06854945421218872},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.343113","doi":"https://doi.org/10.1063/1.343113","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.343113","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1971733317","https://openalex.org/W1978198289","https://openalex.org/W1998366817","https://openalex.org/W2002458078","https://openalex.org/W2002608776","https://openalex.org/W2020629176","https://openalex.org/W2030341786","https://openalex.org/W2036819898","https://openalex.org/W2046164621","https://openalex.org/W2049911602","https://openalex.org/W2050155828","https://openalex.org/W2055562003","https://openalex.org/W2061064061","https://openalex.org/W2067601925","https://openalex.org/W2074347612"],"related_works":["https://openalex.org/W2013311737","https://openalex.org/W2033848413","https://openalex.org/W1997334511","https://openalex.org/W2075380055","https://openalex.org/W4386483546","https://openalex.org/W1586264193","https://openalex.org/W2326636275","https://openalex.org/W2079519035","https://openalex.org/W1977752046","https://openalex.org/W1997851160"],"abstract_inverted_index":{"A":[0],"systematic":[1],"study":[2],"has":[3],"been":[4],"made":[5],"of":[6,61,85,90,110,125,143,158,166],"residual":[7,92,167],"strains":[8,52,93],"in":[9,95,102,169,196],"heteroepitaxial":[10],"GaP,":[11],"GaAs,":[12],"and":[13,43,68,72,134,206,215],"InP":[14,73,135,170,214],"layers":[15],"on":[16],"Si(100)":[17],"grown":[18],"by":[19,115,155],"organometallic":[20],"vapor":[21],"phase":[22],"epitaxy.":[23],"For":[24,132],"GaP":[25,67,103],"films,":[26,136,171],"the":[27,31,48,62,86,91,96,108,123,129,144,152,162,174,182,202,207],"strain":[28,82,101,114,148,168],"parallel":[29],"to":[30,36,58,107,178,181],"interface":[32],"changes":[33,53],"from":[34,54],"compressive":[35,117],"tensile":[37,81,113,147],"for":[38,51],"film":[39],"thicknesses":[40],"between":[41,66,213],"0.7":[42],"\u223c1.5":[44],"\u03bcm,":[45],"showing":[46],"that":[47,140],"dominant":[49],"force":[50],"a":[55,59,80,116,141,156,190],"lattice":[56,126],"mismatch":[57,127],"discrepancy":[60],"thermal":[63,209],"expansion":[64,210],"coefficient":[65,211],"Si.":[69],"All":[70],"GaAs":[71,133],"films":[74,104],"examined":[75],"(1\u20135":[76],"\u03bcm":[77],"thick)":[78],"have":[79],"almost":[83],"independent":[84],"thickness.":[87],"The":[88,99,164],"magnitudes":[89],"are":[94],"order":[97],"\u03b5GaAS>\u03b5GaP>\u03b5InP.":[98],"low":[100,192,203],"is":[105,120,138,149,173,176],"due":[106,180],"compensation":[109],"thermally":[111,145],"induced":[112,121,146],"strain,":[118],"which":[119,172,186],"during":[122,151],"accommodation":[124],"at":[128,161,189],"growth":[130,204],"temperature.":[131],"it":[137],"concluded":[139],"fraction":[142],"accommodated":[150],"cooling":[153],"process":[154],"reconfiguration":[157],"misfit":[159,183],"dislocations":[160],"interface.":[163],"level":[165],"lowest,":[175],"suggested":[177],"be":[179],"dislocation":[184],"rearrangement":[185],"can":[187],"occur":[188],"relatively":[191],"temperature":[193,205],"(\u223c250":[194],"\u00b0C)":[195],"this":[197],"material,":[198],"as":[199,201],"well":[200],"small":[208],"difference":[212],"Si(100).":[216]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}