{"id":"https://openalex.org/W2000376439","doi":"https://doi.org/10.1063/1.326119","title":"Influence of impurities and crystalline defects on electron mobility in heavily doped silicon","display_name":"Influence of impurities and crystalline defects on electron mobility in heavily doped silicon","publication_year":1979,"publication_date":"1979-03-01","ids":{"openalex":"https://openalex.org/W2000376439","doi":"https://doi.org/10.1063/1.326119","mag":"2000376439"},"language":"en","primary_location":{"id":"doi:10.1063/1.326119","doi":"https://doi.org/10.1063/1.326119","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.326119","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5028719600","display_name":"Manuela Finetti","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210133988","display_name":"Bologna Research Area","ror":"https://ror.org/03v4rcp75","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210133988","https://openalex.org/I4210155236"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Finetti","raw_affiliation_strings":["C.N.R.\u2014LAMEL Laboratory, Via Castagnoli 1, 40126 Bologna, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"C.N.R.\u2014LAMEL Laboratory, Via Castagnoli 1, 40126 Bologna, Italy","institution_ids":["https://openalex.org/I4210133988"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060268877","display_name":"R. Galloni","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210133988","display_name":"Bologna Research Area","ror":"https://ror.org/03v4rcp75","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210133988","https://openalex.org/I4210155236"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"R. Galloni","raw_affiliation_strings":["C.N.R.\u2014LAMEL Laboratory, Via Castagnoli 1, 40126 Bologna, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"C.N.R.\u2014LAMEL Laboratory, Via Castagnoli 1, 40126 Bologna, Italy","institution_ids":["https://openalex.org/I4210133988"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5088481221","display_name":"A. M. Mazzone","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210133988","display_name":"Bologna Research Area","ror":"https://ror.org/03v4rcp75","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210133988","https://openalex.org/I4210155236"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. M. Mazzone","raw_affiliation_strings":["C.N.R.\u2014LAMEL Laboratory, Via Castagnoli 1, 40126 Bologna, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"C.N.R.\u2014LAMEL Laboratory, Via Castagnoli 1, 40126 Bologna, Italy","institution_ids":["https://openalex.org/I4210133988"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210133988"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":2.2514,"has_fulltext":false,"cited_by_count":30,"citation_normalized_percentile":{"value":0.86907449,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"50","issue":"3","first_page":"1381","last_page":"1385"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.788100004196167,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.788100004196167,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.14270000159740448,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0494999997317791,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electron-mobility","display_name":"electron mobility","score":0.9950000047683716},{"id":"https://openalex.org/keywords/heavily-doped-silicon","display_name":"heavily doped silicon","score":0.9480000138282776},{"id":"https://openalex.org/keywords/phosphorus-doping","display_name":"phosphorus doping","score":0.9729999899864197},{"id":"https://openalex.org/keywords/impurity-scattering","display_name":"impurity scattering","score":0.8220000267028809},{"id":"https://openalex.org/keywords/dislocations","display_name":"dislocations","score":0.7850000262260437},{"id":"https://openalex.org/keywords/point-defects","display_name":"point defects","score":0.9890000224113464},{"id":"https://openalex.org/keywords/ion-implantation","display_name":"ion implantation","score":0.8550000190734863},{"id":"https://openalex.org/keywords/thermal-diffusion","display_name":"thermal diffusion","score":0.7860000133514404},{"id":"https://openalex.org/keywords/crystal-growth","display_name":"crystal growth","score":0.6380000114440918},{"id":"https://openalex.org/keywords/charge-carrier-scattering","display_name":"carrier scattering","score":0.3630000054836273}],"concepts":[{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.8651398420333862},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.7527543306350708},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.744995653629303},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7424269914627075},{"id":"https://openalex.org/C164675345","wikidata":"https://www.wikidata.org/wiki/Q898226","display_name":"Crystallographic defect","level":2,"score":0.6903319954872131},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6592494249343872},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.614739179611206},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.5938250422477722},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.5336165428161621},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.5069453716278076},{"id":"https://openalex.org/C191486275","wikidata":"https://www.wikidata.org/wiki/Q210028","display_name":"Scattering","level":2,"score":0.4800789952278137},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.43030282855033875},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.35067498683929443},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.3501403331756592},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3346722722053528},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19005736708641052},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.18906459212303162},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1845010221004486},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.11662557721138},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.326119","doi":"https://doi.org/10.1063/1.326119","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.326119","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1978918623","https://openalex.org/W1989332603","https://openalex.org/W1997761079","https://openalex.org/W2014114487","https://openalex.org/W2066646688","https://openalex.org/W2084336176","https://openalex.org/W2086180473","https://openalex.org/W2102024902","https://openalex.org/W2134007403"],"related_works":["https://openalex.org/W2093861659","https://openalex.org/W2525684133","https://openalex.org/W1963479691","https://openalex.org/W2078325894","https://openalex.org/W2088002356","https://openalex.org/W4236274386","https://openalex.org/W2051088824","https://openalex.org/W1940013937","https://openalex.org/W2092317139","https://openalex.org/W2399613985"],"abstract_inverted_index":{"Mobility":[0],"measurements":[1,76],"have":[2,45],"been":[3,46,63],"carried":[4],"out":[5],"at":[6],"room":[7],"temperature":[8],"on":[9,52,86],"phosphorus-doped":[10],"silicon":[11],"samples.":[12,88],"The":[13],"desired":[14],"concentration":[15],"of":[16,33],"dopant,":[17],"varying":[18],"in":[19,26,67],"the":[20,34,71,87],"range":[21],"1019\u20131020":[22],"atoms/cm3,":[23],"was":[24],"obtained":[25,73],"three":[27],"different":[28],"ways:":[29],"homogeneously":[30],"during":[31],"growth":[32],"crystal,":[35],"by":[36,40],"ion":[37],"implantation,":[38],"and":[39,59,77,82],"thermal":[41],"diffusion.":[42],"Significant":[43],"differences":[44],"observed.":[47],"A":[48],"theoretical":[49],"analysis,":[50],"based":[51],"scattering":[53],"due":[54],"to":[55,65],"dopant":[56],"impurities,":[57],"dislocations,":[58],"point":[60],"defects,":[61],"has":[62],"found":[64],"be":[66],"reasonable":[68],"agreement":[69],"with":[70],"results":[72],"from":[74,78],"mobility":[75],"transmission":[79],"electron":[80],"microscopy":[81],"x-ray":[83],"analysis":[84],"performed":[85]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}