{"id":"https://openalex.org/W2000262427","doi":"https://doi.org/10.1117/12.843019","title":"Optical properties of metal-semiconductor-metal ZnO UV photodetectors","display_name":"Optical properties of metal-semiconductor-metal ZnO UV photodetectors","publication_year":2010,"publication_date":"2010-02-11","ids":{"openalex":"https://openalex.org/W2000262427","doi":"https://doi.org/10.1117/12.843019","mag":"2000262427"},"language":"en","primary_location":{"id":"doi:10.1117/12.843019","doi":"https://doi.org/10.1117/12.843019","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.843019","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Linghui Li","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I76835614","display_name":"University of Missouri","ror":"https://ror.org/02ymw8z06","country_code":"US","type":"education","lineage":["https://openalex.org/I76835614"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Linghui Li","raw_affiliation_strings":["Univ. of Missouri, Columbia (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. of Missouri, Columbia (United States)","institution_ids":["https://openalex.org/I76835614"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109967046","display_name":"Yungryel Ryu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yungryel Ryu","raw_affiliation_strings":["MOXtronics, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MOXtronics, Inc. (United States)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046731100","display_name":"H. W. White","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I76835614","display_name":"University of Missouri","ror":"https://ror.org/02ymw8z06","country_code":"US","type":"education","lineage":["https://openalex.org/I76835614"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Henry W. White","raw_affiliation_strings":["MOXtronics, Inc. (United States)","Univ. of Missouri, Columbia (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MOXtronics, Inc. (United States)","institution_ids":[]},{"raw_affiliation_string":"Univ. of Missouri, Columbia (United States)","institution_ids":["https://openalex.org/I76835614"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100623504","display_name":"Ping Yu","orcid":"https://orcid.org/0000-0001-7846-337X","observed_orcids":["https://orcid.org/0000-0001-7846-337X"]},"institutions":[{"id":"https://openalex.org/I76835614","display_name":"University of Missouri","ror":"https://ror.org/02ymw8z06","country_code":"US","type":"education","lineage":["https://openalex.org/I76835614"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ping Yu","raw_affiliation_strings":["Univ. of Missouri, Columbia (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. of Missouri, Columbia (United States)","institution_ids":["https://openalex.org/I76835614"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.7059,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.79324234,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"7603","issue":null,"first_page":"76031A","last_page":"76031A"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/zno-thin-films","display_name":"ZnO thin films","score":0.7820000052452087},{"id":"https://openalex.org/keywords/metal-semiconductor-metal-photodetectors","display_name":"metal-semiconductor-metal photodetectors","score":0.9549999833106995},{"id":"https://openalex.org/keywords/uv-detection","display_name":"UV detection","score":0.8679999709129333},{"id":"https://openalex.org/keywords/schottky-contacts","display_name":"Schottky contacts","score":0.8370000123977661},{"id":"https://openalex.org/keywords/interdigitated-electrodes","display_name":"interdigitated electrodes","score":0.9359999895095825},{"id":"https://openalex.org/keywords/oxygen-annealing","display_name":"oxygen annealing","score":0.9240000247955322},{"id":"https://openalex.org/keywords/contact-resistance","display_name":"contact resistance","score":0.8339999914169312},{"id":"https://openalex.org/keywords/photoresponse-time","display_name":"photoresponse time","score":0.7519999742507935},{"id":"https://openalex.org/keywords/surface-defect-removal","display_name":"surface defect removal","score":0.6150000095367432},{"id":"https://openalex.org/keywords/space-charge-region","display_name":"depletion region","score":0.8960000276565552},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductors","display_name":"wide bandgap semiconductors","score":0.847000002861023}],"concepts":[{"id":"https://openalex.org/C23125352","wikidata":"https://www.wikidata.org/wiki/Q210765","display_name":"Photodetector","level":2,"score":0.8908925652503967},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8417227268218994},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7945781946182251},{"id":"https://openalex.org/C85604662","wikidata":"https://www.wikidata.org/wiki/Q7187735","display_name":"Photodetection","level":3,"score":0.6360873579978943},{"id":"https://openalex.org/C2779845233","wikidata":"https://www.wikidata.org/wiki/Q3381567","display_name":"Photocurrent","level":2,"score":0.6165426969528198},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.5518244504928589},{"id":"https://openalex.org/C201999631","wikidata":"https://www.wikidata.org/wiki/Q2601129","display_name":"Photoconductivity","level":2,"score":0.5453221201896667},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.5427378416061401},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5043472051620483},{"id":"https://openalex.org/C178889773","wikidata":"https://www.wikidata.org/wiki/Q7316011","display_name":"Responsivity","level":3,"score":0.47194546461105347},{"id":"https://openalex.org/C2776798109","wikidata":"https://www.wikidata.org/wiki/Q11391","display_name":"Ultraviolet","level":2,"score":0.4188164472579956},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4181603789329529},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.41165173053741455},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.10410147905349731},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0732109546661377},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.843019","doi":"https://doi.org/10.1117/12.843019","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.843019","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2922022682","https://openalex.org/W2789863715","https://openalex.org/W1989954101","https://openalex.org/W2022445258","https://openalex.org/W1975007513","https://openalex.org/W2476151535","https://openalex.org/W2060839531","https://openalex.org/W2007032813","https://openalex.org/W1999872128","https://openalex.org/W2356810038"],"abstract_inverted_index":{"Among":[0],"wide":[1],"bandgap":[2],"materials":[3],"that":[4,117],"are":[5,113],"sensitive":[6],"to":[7,53],"photons":[8],"in":[9,86,140],"the":[10,28,111,118,134,141,151,161],"ultraviolet":[11],"(UV)":[12],"region,":[13],"ZnO":[14,36,68,73,91,105,162],"is":[15,133],"a":[16,54,154,171,177],"promising":[17],"photonic":[18],"material":[19],"because":[20],"of":[21,66,94,130,136,148,153],"its":[22],"unique":[23],"optoelectronic":[24],"properties.":[25],"Based":[26],"on":[27,35,102,110],"lateral":[29],"interdigitated":[30,96],"back-to-back":[31],"Schottky":[32],"contact":[33,122],"structure":[34],"film,":[37],"metal-semiconductor-metal":[38],"(MSM)":[39],"photodetectors":[40,70],"have":[41],"substantially":[42],"lower":[43],"parasitic":[44],"capacitance":[45],"compared":[46],"with":[47,99,170,182],"vertical":[48],"p-i-n":[49],"photodetectors,":[50],"which":[51,72],"leads":[52],"very":[55,172],"high":[56],"speed":[57],"photodetection.":[58],"In":[59],"this":[60],"paper,":[61],"we":[62],"report":[63],"optical":[64],"characteristics":[65],"MSM":[67,90],"UV":[69],"for":[71],"films":[74],"were":[75],"fabricated":[76],"by":[77],"hybrid":[78],"beam":[79],"deposition.":[80],"An":[81],"annealing":[82,119,131],"process":[83,120,132],"was":[84],"used":[85],"oxygen":[87],"ambient.":[88],"The":[89,108,127,164,185],"photodetector":[92,112],"consists":[93],"two":[95],"electrodes":[97,109],"both":[98],"Ti/Au":[100],"metals":[101],"an":[103,190],"n-type":[104],"thin":[106],"film.":[107,163],"finger-shaped.":[114],"We":[115],"found":[116],"decreases":[121],"resistance":[123],"and":[124,176],"photoresponse":[125],"time.":[126],"possible":[128],"mechanism":[129],"removal":[135],"surface":[137],"defects":[138],"created":[139],"fabrication":[142],"process.":[143],"A":[144],"sublinear":[145],"power":[146],"dependence":[147],"photocurrent":[149],"reveals":[150],"existence":[152],"light":[155],"induced":[156],"space":[157],"charge":[158],"region":[159],"inside":[160],"device":[165],"displays":[166],"fast":[167],"pulse":[168],"response":[169],"short":[173],"rise":[174],"time":[175,181,193],"relatively":[178],"long":[179],"relaxation":[180],"applied":[183],"bias.":[184],"exponential":[186],"decay":[187],"tail":[188],"indicates":[189],"RC":[191],"type":[192],"response.":[194]},"counts_by_year":[{"year":2013,"cited_by_count":1}],"updated_date":"2026-09-27T08:07:27.782135","created_date":"2016-06-24T00:00:00"}