{"id":"https://openalex.org/W2000238101","doi":"https://doi.org/10.1063/1.2212069","title":"Silicon carbide metal-semiconductor field-effect transistor with and without a low-doped buffer: Influence of substrate traps","display_name":"Silicon carbide metal-semiconductor field-effect transistor with and without a low-doped buffer: Influence of substrate traps","publication_year":2006,"publication_date":"2006-07-01","ids":{"openalex":"https://openalex.org/W2000238101","doi":"https://doi.org/10.1063/1.2212069","mag":"2000238101"},"language":"en","primary_location":{"id":"doi:10.1063/1.2212069","doi":"https://doi.org/10.1063/1.2212069","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2212069","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109939089","display_name":"Andrei V. Los","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Andrei V. Los","raw_affiliation_strings":["Freescale Semiconductor, Inc. , 15 Bozhenko Street, Kiev 03680, Ukraine"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Freescale Semiconductor, Inc. , 15 Bozhenko Street, Kiev 03680, Ukraine","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5109939089"],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":1.0118,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.78028265,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"100","issue":"1","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/4h-sic","display_name":"4H-SiC","score":0.8679999709129333},{"id":"https://openalex.org/keywords/semi-insulating-substrates","display_name":"semi-insulating substrates","score":0.8679999709129333},{"id":"https://openalex.org/keywords/charge-trapping","display_name":"charge trapping","score":0.8970000147819519},{"id":"https://openalex.org/keywords/deep-level-transient-spectroscopy","display_name":"deep level transient spectroscopy","score":0.8650000095367432},{"id":"https://openalex.org/keywords/admittance-spectroscopy","display_name":"admittance spectroscopy","score":0.9169999957084656},{"id":"https://openalex.org/keywords/power-transistors","display_name":"power transistors","score":0.6759999990463257}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.9012938737869263},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7487866282463074},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.733386218547821},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.6037185192108154},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5987659096717834},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.5336018204689026},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5271285176277161},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4914025068283081},{"id":"https://openalex.org/C504678139","wikidata":"https://www.wikidata.org/wiki/Q722","display_name":"Vanadium","level":2,"score":0.48124977946281433},{"id":"https://openalex.org/C2780080961","wikidata":"https://www.wikidata.org/wiki/Q176282","display_name":"Deep-level transient spectroscopy","level":3,"score":0.46503207087516785},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.46148553490638733},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4591722786426544},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.42648231983184814},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2632972300052643},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.26022642850875854},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.15685057640075684},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14148294925689697},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.2212069","doi":"https://doi.org/10.1063/1.2212069","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2212069","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1970251435","https://openalex.org/W1976611375","https://openalex.org/W1977228303","https://openalex.org/W1986512755","https://openalex.org/W1997021940","https://openalex.org/W1997559427","https://openalex.org/W2041692303","https://openalex.org/W2050996835","https://openalex.org/W2056970670","https://openalex.org/W2085073581","https://openalex.org/W2094315807","https://openalex.org/W2104535007","https://openalex.org/W2129220875","https://openalex.org/W2152654501"],"related_works":["https://openalex.org/W2100550216","https://openalex.org/W2063226086","https://openalex.org/W2060326159","https://openalex.org/W2089562367","https://openalex.org/W2332320958","https://openalex.org/W73354445","https://openalex.org/W2014640493","https://openalex.org/W2065517124","https://openalex.org/W7064195625","https://openalex.org/W2061239241"],"abstract_inverted_index":{"Experimental":[0],"dc":[1],"and":[2,25,41,61,90,94],"small-signal":[3],"ac":[4],"drain-source":[5,91],"characteristics":[6,55,124],"are":[7,45,56],"compared":[8],"for":[9,36],"power":[10],"4H":[11],"silicon":[12],"carbide":[13],"(SiC)":[14],"metal-semiconductor":[15],"field-effect":[16],"transistors":[17],"(MESFETs)":[18],"fabricated":[19],"on":[20],"vanadium-compensated":[21],"semi-insulating":[22,68],"substrates,":[23],"with":[24,48,84,117,141],"without":[26,103,147],"a":[27],"low-doped":[28],"p-type":[29],"buffer":[30,143],"layer.":[31],"Device":[32],"simulation":[33],"is":[34],"performed":[35],"the":[37,49,67,74,101,104,115,118,136,142,148,158,166],"same":[38],"device":[39,122],"structures":[40],"simulated":[42],"current":[43,156],"distributions":[44],"analyzed":[46],"together":[47],"experimental":[50],"data.":[51],"MESFET":[52],"transient":[53,98],"output":[54,123],"found":[57],"to":[58,145],"be":[59],"similar":[60],"controlled":[62],"by":[63,88],"carrier":[64],"trapping":[65,81,132],"in":[66,70,100,114,139,162],"substrate":[69,159],"both":[71,163],"types":[72,164],"of":[73,121,154,165],"devices":[75,102,116,140,146],"at":[76,125,135,168],"large":[77,169],"gate":[78,170],"voltages.":[79,171],"The":[80],"was":[82],"correlated":[83],"deep":[85,96],"vanadium":[86,137],"acceptors":[87,138],"gate-source":[89,95],"admittance":[92],"spectroscopies,":[93],"level":[97],"spectroscopy":[99],"buffer,":[105],"however,":[106],"neither":[107],"spectroscopic":[108],"technique":[109],"revealed":[110],"any":[111],"trap":[112],"signatures":[113],"buffer.":[119,149],"Measurements":[120],"different":[126],"temperatures":[127],"allowed":[128],"confirming":[129],"indirectly":[130],"that":[131,152],"takes":[133,160],"place":[134,161],"similarly":[144],"Simulations":[150],"confirm":[151],"injection":[153],"channel":[155],"into":[157],"MESFETs":[167]},"counts_by_year":[{"year":2019,"cited_by_count":2},{"year":2017,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2016-06-24T00:00:00"}