{"id":"https://openalex.org/W1998721071","doi":"https://doi.org/10.1116/1.1723338","title":"50 nm gate electrode patterning using a neutral-beam etching system","display_name":"50 nm gate electrode patterning using a neutral-beam etching system","publication_year":2004,"publication_date":"2004-07-01","ids":{"openalex":"https://openalex.org/W1998721071","doi":"https://doi.org/10.1116/1.1723338","mag":"1998721071"},"language":"en","primary_location":{"id":"doi:10.1116/1.1723338","doi":"https://doi.org/10.1116/1.1723338","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.1723338","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010201656","display_name":"Shuichi Noda","orcid":"https://orcid.org/0000-0001-9259-3007","observed_orcids":["https://orcid.org/0000-0001-9259-3007"]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4405276234","display_name":"Semiconductor Leading Edge Technologies, Inc (Japan)","ror":"https://ror.org/0523jgb37","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405276234"]},{"id":"https://openalex.org/I4405286145","display_name":"Institute of Fluid Science, Tohoku University","ror":"https://ror.org/0188kxs81","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I4405286145"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shuichi Noda","raw_affiliation_strings":["Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi\u2009980-8557, Japan","Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki\u2009305-8569, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi\u2009980-8557, Japan","institution_ids":["https://openalex.org/I201537933","https://openalex.org/I4405286145"]},{"raw_affiliation_string":"Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki\u2009305-8569, Japan","institution_ids":["https://openalex.org/I4405276234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027955458","display_name":"Hirotomo Nishimori","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405276234","display_name":"Semiconductor Leading Edge Technologies, Inc (Japan)","ror":"https://ror.org/0523jgb37","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405276234"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hirotomo Nishimori","raw_affiliation_strings":["Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki\u2009305-8569, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki\u2009305-8569, Japan","institution_ids":["https://openalex.org/I4405276234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110335487","display_name":"Tohru Ida","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405276234","display_name":"Semiconductor Leading Edge Technologies, Inc (Japan)","ror":"https://ror.org/0523jgb37","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405276234"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tohru Ida","raw_affiliation_strings":["Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki\u2009305-8569, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki\u2009305-8569, Japan","institution_ids":["https://openalex.org/I4405276234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080533135","display_name":"Tsunetoshi ARIKADO","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405276234","display_name":"Semiconductor Leading Edge Technologies, Inc (Japan)","ror":"https://ror.org/0523jgb37","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405276234"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tsunetoshi Arikado","raw_affiliation_strings":["Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki\u2009305-8569, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki\u2009305-8569, Japan","institution_ids":["https://openalex.org/I4405276234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067507479","display_name":"Katsunori Ichiki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74894318","display_name":"Ebara (Japan)","ror":"https://ror.org/02yemx219","country_code":"JP","type":"company","lineage":["https://openalex.org/I74894318"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Katsunori Ichiki","raw_affiliation_strings":["Ebara Research Co., Ltd., 4-2-1 Honfujisawa, Fujisawa, Kanagawa\u2009251-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ebara Research Co., Ltd., 4-2-1 Honfujisawa, Fujisawa, Kanagawa\u2009251-8502, Japan","institution_ids":["https://openalex.org/I74894318"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105939544","display_name":"Takuya Ozaki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4405286145","display_name":"Institute of Fluid Science, Tohoku University","ror":"https://ror.org/0188kxs81","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I4405286145"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takuya Ozaki","raw_affiliation_strings":["Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi\u2009980-8557, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi\u2009980-8557, Japan","institution_ids":["https://openalex.org/I201537933","https://openalex.org/I4405286145"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5084880356","display_name":"Seiji Samukawa","orcid":"https://orcid.org/0000-0003-4971-3290","observed_orcids":["https://orcid.org/0000-0003-4971-3290"]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4405286145","display_name":"Institute of Fluid Science, Tohoku University","ror":"https://ror.org/0188kxs81","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I4405286145"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Seiji Samukawa","raw_affiliation_strings":["Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi\u2009980-8557, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi\u2009980-8557, Japan","institution_ids":["https://openalex.org/I201537933","https://openalex.org/I4405286145"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":6.9647,"has_fulltext":false,"cited_by_count":57,"citation_normalized_percentile":{"value":0.96922435,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"22","issue":"4","first_page":"1506","last_page":"1512"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.8574000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.8574000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.06669999659061432,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.03220000118017197,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/neutral-beam-etching","display_name":"neutral beam etching","score":0.9670000076293945},{"id":"https://openalex.org/keywords/electrode-bias","display_name":"electrode bias","score":0.7310000061988831},{"id":"https://openalex.org/keywords/anisotropy","display_name":"anisotropy","score":0.6520000100135803},{"id":"https://openalex.org/keywords/etch-rate","display_name":"etch rate","score":0.7789999842643738},{"id":"https://openalex.org/keywords/mos-capacitors","display_name":"MOS capacitors","score":0.8930000066757202}],"concepts":[{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.811431884765625},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.6714963912963867},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6515642404556274},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5799064636230469},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.573733925819397},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.569386899471283},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4800878167152405},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.44226527214050293},{"id":"https://openalex.org/C1291036","wikidata":"https://www.wikidata.org/wiki/Q1191918","display_name":"Dry etching","level":4,"score":0.43340060114860535},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.42959365248680115},{"id":"https://openalex.org/C154843443","wikidata":"https://www.wikidata.org/wiki/Q139106","display_name":"Engraving","level":2,"score":0.42246997356414795},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.41720864176750183},{"id":"https://openalex.org/C33220542","wikidata":"https://www.wikidata.org/wiki/Q6086567","display_name":"Isotropic etching","level":4,"score":0.41329771280288696},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.39355823397636414},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3330921232700348},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2640339434146881},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.23546841740608215},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.12156075239181519},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10240253806114197},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.100710928440094},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.06375187635421753},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.061105191707611084},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.1723338","doi":"https://doi.org/10.1116/1.1723338","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.1723338","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1541821939","https://openalex.org/W1982011977","https://openalex.org/W2000167222","https://openalex.org/W2004515062","https://openalex.org/W2005042798","https://openalex.org/W2012471937","https://openalex.org/W2021531827","https://openalex.org/W2046198989","https://openalex.org/W2063002615","https://openalex.org/W2078824764","https://openalex.org/W2093647584"],"related_works":["https://openalex.org/W2541720298","https://openalex.org/W2016755269","https://openalex.org/W2464993459","https://openalex.org/W3122645008","https://openalex.org/W7125950940","https://openalex.org/W2038430059","https://openalex.org/W2029469332","https://openalex.org/W2536319606","https://openalex.org/W3016426952","https://openalex.org/W2042434175"],"abstract_inverted_index":{"A":[0],"50-nm-width":[1],"metal-oxide-semiconductor":[2],"(MOS)":[3],"gate":[4,30],"etching":[5,13,31,40,67],"process":[6],"was":[7,57,75,91,127],"established":[8],"using":[9,32],"a":[10,26,52,79,119],"recently-developed":[11],"neutral-beam":[12],"system":[14],"by":[15,77,123,136],"optimizing":[16],"the":[17,21,45,49,66,72,85,96,100,103,110,124],"gas":[18,37],"chemistry":[19],"and":[20,99],"electrode":[22],"bias":[23,83,90],"condition.":[24],"In":[25],"comparison":[27],"with":[28,106],"poly-Si":[29,104],"either":[33],"SF6":[34],"or":[35],"Cl2":[36],"chemistries,":[38],"opposite":[39],"characteristics":[41],"were":[42],"observed":[43],"in":[44,59,94],"pattern":[46],"profile.":[47],"Consequently,":[48],"use":[50],"of":[51,54,65,71,102,109,130],"mixture":[53],"these":[55],"gases":[56],"proposed":[58],"order":[60,129],"to":[61,84],"achieve":[62],"fine":[63],"control":[64],"profiles.":[68],"The":[69,88,113],"energy":[70],"neutral":[73,125],"beam":[74,126],"increased":[76],"applying":[78],"600":[80],"kHz":[81],"rf":[82,89],"bottom":[86],"electrode.":[87],"very":[92],"effective":[93],"increasing":[95],"etch":[97],"rate":[98],"anisotropy":[101],"gates,":[105],"no":[107],"deterioration":[108],"neutralization":[111],"efficiency.":[112],"oxide":[114],"leakage":[115],"current":[116],"achieved":[117,135],"for":[118],"MOS":[120],"capacitor":[121],"etched":[122],"one":[128],"magnitude":[131],"lower":[132],"than":[133],"that":[134],"conventional":[137],"plasma":[138],"etching.":[139]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":5},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-24T09:50:30.924529","created_date":"2016-06-24T00:00:00"}