{"id":"https://openalex.org/W1998458053","doi":"https://doi.org/10.1063/1.95860","title":"Effects of Be and Si on disordering of the AlAs/GaAs superlattice","display_name":"Effects of Be and Si on disordering of the AlAs/GaAs superlattice","publication_year":1985,"publication_date":"1985-05-01","ids":{"openalex":"https://openalex.org/W1998458053","doi":"https://doi.org/10.1063/1.95860","mag":"1998458053"},"language":"en","primary_location":{"id":"doi:10.1063/1.95860","doi":"https://doi.org/10.1063/1.95860","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.95860","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113589343","display_name":"Mitsuo Kawabe","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I146399215","display_name":"University of Tsukuba","ror":"https://ror.org/02956yf07","country_code":"JP","type":"education","lineage":["https://openalex.org/I146399215"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Mitsuo Kawabe","raw_affiliation_strings":["Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan","institution_ids":["https://openalex.org/I146399215"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109133660","display_name":"Norisato Shimizu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I146399215","display_name":"University of Tsukuba","ror":"https://ror.org/02956yf07","country_code":"JP","type":"education","lineage":["https://openalex.org/I146399215"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Norisato Shimizu","raw_affiliation_strings":["Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan","institution_ids":["https://openalex.org/I146399215"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002164306","display_name":"Fumio Hasegawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I146399215","display_name":"University of Tsukuba","ror":"https://ror.org/02956yf07","country_code":"JP","type":"education","lineage":["https://openalex.org/I146399215"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Fumio Hasegawa","raw_affiliation_strings":["Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan","institution_ids":["https://openalex.org/I146399215"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113946979","display_name":"Yasuo Nannichi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I146399215","display_name":"University of Tsukuba","ror":"https://ror.org/02956yf07","country_code":"JP","type":"education","lineage":["https://openalex.org/I146399215"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yasuo Nannichi","raw_affiliation_strings":["Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan","institution_ids":["https://openalex.org/I146399215"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I146399215"],"apc_list":null,"apc_paid":null,"fwci":7.2355,"has_fulltext":false,"cited_by_count":87,"citation_normalized_percentile":{"value":0.98082285,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"46","issue":"9","first_page":"849","last_page":"850"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.8291000127792358,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.8291000127792358,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.12120000272989273,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.015599999576807022,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gaas-alas-superlattices","display_name":"GaAs/AlAs superlattices","score":0.9879999756813049},{"id":"https://openalex.org/keywords/beryllium-doping","display_name":"beryllium doping","score":0.9769999980926514},{"id":"https://openalex.org/keywords/silicon-doping","display_name":"silicon doping","score":0.949999988079071},{"id":"https://openalex.org/keywords/intermixing","display_name":"intermixing","score":0.7279999852180481},{"id":"https://openalex.org/keywords/surface-accumulation","display_name":"surface accumulation","score":0.4560000002384186},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.7639999985694885},{"id":"https://openalex.org/keywords/epitaxial-growth","display_name":"epitaxial growth","score":0.777999997138977},{"id":"https://openalex.org/keywords/iii-v-semiconductors","display_name":"III-V semiconductors","score":0.6869999766349792}],"concepts":[{"id":"https://openalex.org/C105382558","wikidata":"https://www.wikidata.org/wiki/Q332431","display_name":"Superlattice","level":2,"score":0.9786432981491089},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.7588547468185425},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.7201009392738342},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6959298849105835},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.6473574638366699},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6360851526260376},{"id":"https://openalex.org/C26456737","wikidata":"https://www.wikidata.org/wiki/Q185154","display_name":"Crystal growth","level":2,"score":0.44986864924430847},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.33353036642074585},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.28029847145080566},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.16311049461364746},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14599564671516418},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0694473385810852},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06071653962135315},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.95860","doi":"https://doi.org/10.1063/1.95860","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.95860","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2022018454","https://openalex.org/W2038435201","https://openalex.org/W2064751003","https://openalex.org/W2069057514","https://openalex.org/W2085190768"],"related_works":["https://openalex.org/W2022018454","https://openalex.org/W2061422775","https://openalex.org/W2033073109","https://openalex.org/W2052856765","https://openalex.org/W2065748430","https://openalex.org/W1967545762","https://openalex.org/W2114809561","https://openalex.org/W2335694378","https://openalex.org/W2038435201","https://openalex.org/W2055848868"],"abstract_inverted_index":{"Effects":[0],"of":[1,7,14,23,31,41,51,57,64,88,91,100],"Be":[2,8,21,42,58,79,95],"doping":[3,22,80,96],"and":[4,9,33,38],"the":[5,12,29,39,48,60,62,76,82,89,94],"interaction":[6],"Si":[10],"on":[11],"disordering":[13,90],"15-nm":[15],"AlAs/15-nm":[16],"GaAs":[17],"superlattices":[18],"were":[19],"studied.":[20],"more":[24],"than":[25],"4\u00d71019":[26],"cm\u22123":[27],"causes":[28],"intermixing":[30],"Al":[32],"Ga":[34],"during":[35],"epitaxial":[36],"growth":[37,49],"effect":[40],"surface":[43],"accumulation":[44],"is":[45],"observed":[46],"at":[47],"temperature":[50],"540":[52],"\u00b0C,":[53,66],"while":[54],"after":[55],"incorporation":[56],"in":[59,75,81],"crystal":[61],"annealing":[63],"750":[65],"2":[67],"h":[68],"does":[69],"not":[70],"cause":[71],"any":[72],"remarkable":[73,86],"change":[74],"superlattice":[77,84,92],"structure.":[78],"Si-doped":[83],"shows":[85],"suppression":[87],"when":[93],"level":[97],"exceeds":[98],"that":[99],"Si.":[101]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2013,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}