{"id":"https://openalex.org/W1998279346","doi":"https://doi.org/10.1109/iedm.1977.189244","title":"Session 16 Solid state devices \u2014 Compound semiconductor FETs","display_name":"Session 16 Solid state devices \u2014 Compound semiconductor FETs","publication_year":1977,"publication_date":"1977-01-01","ids":{"openalex":"https://openalex.org/W1998279346","doi":"https://doi.org/10.1109/iedm.1977.189244","mag":"1998279346"},"language":"en","primary_location":{"id":"doi:10.1109/iedm.1977.189244","doi":"https://doi.org/10.1109/iedm.1977.189244","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.1977.189244","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"1977 International Electron Devices Meeting","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006448685","display_name":"Richard B. Fair","orcid":"https://orcid.org/0000-0002-6728-1199","observed_orcids":["https://orcid.org/0000-0002-6728-1199"]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"R.B. Fair","raw_affiliation_strings":["Bell Laboratories, Reading, Pennsylvania, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bell Laboratories, Reading, Pennsylvania, USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5006448685"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.12640449,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"325","last_page":"325"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7113999724388123,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7113999724388123,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0771000012755394,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.06120000034570694,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/compound-semiconductors","display_name":"compound semiconductors","score":0.9049999713897705},{"id":"https://openalex.org/keywords/field-effect-transistors","display_name":"field-effect transistors","score":0.984000027179718},{"id":"https://openalex.org/keywords/solid-state-devices","display_name":"solid-state devices","score":0.8450000286102295}],"concepts":[{"id":"https://openalex.org/C2779182362","wikidata":"https://www.wikidata.org/wiki/Q17126187","display_name":"Session (web analytics)","level":2,"score":0.8159500956535339},{"id":"https://openalex.org/C107814960","wikidata":"https://www.wikidata.org/wiki/Q611957","display_name":"Solid-state","level":2,"score":0.5341061353683472},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4980199337005615},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4326735734939575},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4210031032562256},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3593814969062805},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.35001686215400696},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19807887077331543},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.1459520161151886},{"id":"https://openalex.org/C136764020","wikidata":"https://www.wikidata.org/wiki/Q466","display_name":"World Wide Web","level":1,"score":0.11981475353240967}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iedm.1977.189244","doi":"https://doi.org/10.1109/iedm.1977.189244","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.1977.189244","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"1977 International Electron Devices Meeting","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2079561551","https://openalex.org/W2042028821","https://openalex.org/W1995320869","https://openalex.org/W2015932873","https://openalex.org/W2091201473","https://openalex.org/W2047428399","https://openalex.org/W2047132167","https://openalex.org/W2048753152","https://openalex.org/W3184628818","https://openalex.org/W2084273889"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-26T11:51:55.731654","created_date":"2016-06-24T00:00:00"}