{"id":"https://openalex.org/W1998175963","doi":"https://doi.org/10.1117/12.876492","title":"Experimental studies of the Franz-Keldysh effect in CVD grown GeSi epi on SOI","display_name":"Experimental studies of the Franz-Keldysh effect in CVD grown GeSi epi on SOI","publication_year":2011,"publication_date":"2011-01-14","ids":{"openalex":"https://openalex.org/W1998175963","doi":"https://doi.org/10.1117/12.876492","mag":"1998175963"},"language":"en","primary_location":{"id":"doi:10.1117/12.876492","doi":"https://doi.org/10.1117/12.876492","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.876492","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100762947","display_name":"Ying Luo","orcid":"https://orcid.org/0000-0002-2530-0507","observed_orcids":["https://orcid.org/0000-0002-2530-0507"]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ying Luo","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"middle","author":{"id":null,"display_name":"John Simons","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John Simons","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011458525","display_name":"Joannes M. Costa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joannes Costa","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010760157","display_name":"Ivan N. Shubin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ivan Shubin","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102091452","display_name":"Winnie Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Winnie Chen","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002324595","display_name":"Bill Frans","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210139064","display_name":"Lawrence Semiconductor Research Laboratory","ror":"https://ror.org/03jm9y996","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210139064"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bill Frans","raw_affiliation_strings":["Lawrence Semiconductor Research Lab., Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Lawrence Semiconductor Research Lab., Inc. (United States)","institution_ids":["https://openalex.org/I4210139064"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Mac Robinson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210139064","display_name":"Lawrence Semiconductor Research Laboratory","ror":"https://ror.org/03jm9y996","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210139064"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mac Robinson","raw_affiliation_strings":["Lawrence Semiconductor Research Lab., Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Lawrence Semiconductor Research Lab., Inc. (United States)","institution_ids":["https://openalex.org/I4210139064"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038119038","display_name":"Roshanak Shafiiha","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Roshanak Shafiiha","raw_affiliation_strings":["Kotura, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kotura, Inc. (United States)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109090038","display_name":"Shirong Liao","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shirong Liao","raw_affiliation_strings":["Kotura, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kotura, Inc. (United States)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101776686","display_name":"Ning-Ning Feng","orcid":"https://orcid.org/0000-0003-0358-1659","observed_orcids":["https://orcid.org/0000-0003-0358-1659"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ning-Ning Feng","raw_affiliation_strings":["Kotura, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kotura, Inc. (United States)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113646483","display_name":"Xuezhe Zheng","orcid":"https://orcid.org/0000-0001-6962-6202","observed_orcids":["https://orcid.org/0000-0001-6962-6202"]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xuezhe Zheng","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100451589","display_name":"Guoliang Li","orcid":"https://orcid.org/0000-0003-3798-8422","observed_orcids":["https://orcid.org/0000-0003-3798-8422"]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Guoliang Li","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111500746","display_name":"Jin Yao","orcid":"https://orcid.org/0000-0003-4630-5910","observed_orcids":["https://orcid.org/0000-0003-4630-5910"]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jin Yao","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035912859","display_name":"Hiren D. Thacker","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hiren Thacker","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5107869608","display_name":"Mehdi Asghari","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Mehdi Asghari","raw_affiliation_strings":["Kotura, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kotura, Inc. (United States)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020647978","display_name":"Keith W. Goossen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Keith Goossen","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111013579","display_name":"Kannan Raj","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kannan Raj","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008485416","display_name":"Ashok V. Krishnamoorthy","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ashok V. Krishnamoorthy","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5008420001","display_name":"J. E. Cunningham","orcid":"https://orcid.org/0000-0002-1805-9743","observed_orcids":["https://orcid.org/0000-0002-1805-9743"]},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John E. Cunningham","raw_affiliation_strings":["Oracle (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oracle (United States)","institution_ids":["https://openalex.org/I1342911587"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.1221,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.85664189,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"7944","issue":null,"first_page":"79440P","last_page":"79440P"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9740999937057495,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9740999937057495,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.011300000362098217,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0031999999191612005,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/franz-keldysh-effect","display_name":"Franz-Keldysh effect","score":0.9940000176429749},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.878000020980835},{"id":"https://openalex.org/keywords/electroabsorption","display_name":"electroabsorption","score":0.9430000185966492},{"id":"https://openalex.org/keywords/optical-modulation","display_name":"optical modulation","score":0.6890000104904175},{"id":"https://openalex.org/keywords/wavelength-division-multiplexing","display_name":"wavelength division multiplexing","score":0.8529999852180481},{"id":"https://openalex.org/keywords/c-band","display_name":"C-band","score":0.5440000295639038},{"id":"https://openalex.org/keywords/selective-epitaxial-growth","display_name":"selective epitaxial growth","score":0.75},{"id":"https://openalex.org/keywords/pin-diodes","display_name":"PIN diodes","score":0.7129999995231628},{"id":"https://openalex.org/keywords/dark-current","display_name":"dark current","score":0.6610000133514404},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.8539999723434448},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"surface roughness","score":0.7590000033378601},{"id":"https://openalex.org/keywords/defect-density","display_name":"defect density","score":0.7319999933242798}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7837562561035156},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.562074601650238},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5224546194076538},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.4903860092163086},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.43904542922973633},{"id":"https://openalex.org/C50792271","wikidata":"https://www.wikidata.org/wiki/Q332846","display_name":"Absorption edge","level":3,"score":0.4152679443359375},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.34965720772743225},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3269789218902588},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08743897080421448},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.876492","doi":"https://doi.org/10.1117/12.876492","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.876492","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1981862566","https://openalex.org/W1996863014","https://openalex.org/W7037326667","https://openalex.org/W2071761013","https://openalex.org/W4252263179","https://openalex.org/W2388024216","https://openalex.org/W2587973479","https://openalex.org/W4232382080","https://openalex.org/W2524855454","https://openalex.org/W1965235245"],"abstract_inverted_index":{"Electroabsorption":[0],"from":[1],"GeSi":[2,94,138,175,222],"on":[3],"silicon-on-insulator":[4],"(SOI)":[5],"is":[6,84],"expected":[7,85],"to":[8,16,55,72,86,128,167],"have":[9],"promising":[10],"potential":[11],"for":[12,29,70,93,116,170],"optical":[13,165],"modulation":[14],"due":[15],"its":[17],"low":[18,178,182,199],"power":[19],"consumption,":[20],"small":[21],"footprint,":[22],"and":[23,119,164,181,191],"more":[24],"importantly,":[25],"wide":[26],"spectral":[27],"bandwidth":[28],"wavelength":[30],"division":[31],"multiplexing":[32],"(WDM)":[33],"applications.":[34],"Germanium,":[35],"as":[36,104],"a":[37,41,46,99,194],"bulk":[38,82,130],"crystal,":[39],"has":[40],"sharp":[42],"absorption":[43,230],"edge":[44],"with":[45,67,140,177,210,224],"strong":[47,77],"coefficient":[48],"at":[49,206,235,238],"the":[50,56,73,124,129],"direct":[51],"band":[52],"gap":[53],"close":[54],"C-band":[57,74],"wavelength.":[58],"Unfortunately,":[59],"when":[60,65,96],"integrated":[61],"onto":[62],"Silicon,":[63],"or":[64],"alloyed":[66],"dilute":[68],"Si":[69,106,142,226],"blueshifting":[71],"operation,":[75],"this":[76],"Franz-Keldysh":[78],"(FK)":[79],"effect":[80,127],"in":[81,193,220],"Ge":[83,131],"degrade.":[87],"Here,":[88],"we":[89],"report":[90],"experimental":[91],"results":[92],"epi":[95,176],"grown":[97],"under":[98,109],"variety":[100],"of":[101,137,203,213,232],"conditions":[102],"such":[103],"different":[105,147],"alloy":[107,223],"content,":[108],"selective":[110,113],"versus":[111],"non":[112],"growth":[114,136],"modes":[115],"both":[117],"Silicon":[118],"SOI":[120],"substrates.":[121],"We":[122],"compare":[123],"measured":[125],"FK":[126],"material.":[132],"Reduced":[133],"pressure":[134],"CVD":[135],"heteroepitaxy":[139],"various":[141],"content":[143,227],"was":[144,218],"studied":[145],"by":[146],"characterization":[148],"tools:":[149],"X-ray":[150],"diffraction":[151],"(XRD),":[152],"atomic":[153],"force":[154],"microscopy":[155],"(AFM),":[156],"secondary":[157],"ion":[158],"mass":[159],"spectrometry":[160],"(SIMS),":[161],"Hall":[162],"measurement":[163],"transmission/absorption":[166],"analyze":[168],"performance":[169],"1550":[171],"nm":[172,237],"operation.":[173],"State-of-the-art":[174],"defect":[179],"density":[180,202],"root-mean-square":[183],"(RMS)":[184],"roughness":[185],"were":[186],"fabricated":[187],"into":[188],"pin":[189],"diodes":[190],"tested":[192],"surface-normal":[195],"geometry.":[196],"They":[197],"exhibit":[198],"dark":[200],"current":[201],"5":[204],"mA/cm2":[205],"1V":[207],"reverse":[208],"bias":[209],"breakdown":[211],"voltages":[212],"45":[214],"Volts.":[215],"Strong":[216],"electroabsorption":[217],"observed":[219],"our":[221],"0.6%":[225],"having":[228],"maximum":[229],"contrast":[231],"\u0394\u03b1/\u03b1":[233],"~5":[234],"1580":[236],"75":[239],"kV/cm.":[240]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}