{"id":"https://openalex.org/W1997688593","doi":"https://doi.org/10.1016/j.spmi.2011.07.013","title":"A novel partial SOI LDMOSFET with a trench and buried P layer for breakdown voltage improvement","display_name":"A novel partial SOI LDMOSFET with a trench and buried P layer for breakdown voltage improvement","publication_year":2011,"publication_date":"2011-08-08","ids":{"openalex":"https://openalex.org/W1997688593","doi":"https://doi.org/10.1016/j.spmi.2011.07.013","mag":"1997688593"},"language":"en","primary_location":{"id":"doi:10.1016/j.spmi.2011.07.013","doi":"https://doi.org/10.1016/j.spmi.2011.07.013","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.spmi.2011.07.013","pdf_url":null,"source":{"id":"https://openalex.org/S107898947","display_name":"Superlattices and Microstructures","issn_l":"0749-6036","issn":["0749-6036","1096-3677"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Superlattices and Microstructures","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040729601","display_name":"Ali A. Orouji","orcid":"https://orcid.org/0000-0002-8664-6069","observed_orcids":["https://orcid.org/0000-0002-8664-6069"]},"institutions":[{"id":"https://openalex.org/I928334797","display_name":"Semnan University","ror":"https://ror.org/029gksw03","country_code":"IR","type":"education","lineage":["https://openalex.org/I928334797"]}],"countries":["IR"],"is_corresponding":true,"raw_author_name":"Ali A. Orouji","raw_affiliation_strings":["Electrical Engineering Department, Semnan University, Semnan, Iran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, Semnan University, Semnan, Iran","institution_ids":["https://openalex.org/I928334797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003552730","display_name":"Seyed Ehsan Jamali Mahabadi","orcid":"https://orcid.org/0000-0003-4718-6976","observed_orcids":["https://orcid.org/0000-0003-4718-6976"]},"institutions":[{"id":"https://openalex.org/I928334797","display_name":"Semnan University","ror":"https://ror.org/029gksw03","country_code":"IR","type":"education","lineage":["https://openalex.org/I928334797"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"S.E. Jamali Mahabadi","raw_affiliation_strings":["Electrical Engineering Department, Semnan University, Semnan, Iran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, Semnan University, Semnan, Iran","institution_ids":["https://openalex.org/I928334797"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5046499166","display_name":"Parviz Keshavarzi","orcid":"https://orcid.org/0000-0002-3223-742X","observed_orcids":["https://orcid.org/0000-0002-3223-742X"]},"institutions":[{"id":"https://openalex.org/I928334797","display_name":"Semnan University","ror":"https://ror.org/029gksw03","country_code":"IR","type":"education","lineage":["https://openalex.org/I928334797"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"P. Keshavarzi","raw_affiliation_strings":["Electrical Engineering Department, Semnan University, Semnan, Iran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, Semnan University, Semnan, Iran","institution_ids":["https://openalex.org/I928334797"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5040729601"],"corresponding_institution_ids":["https://openalex.org/I928334797"],"apc_list":{"value":2550,"currency":"USD","value_usd":2550},"apc_paid":null,"fwci":0.6352,"has_fulltext":false,"cited_by_count":34,"citation_normalized_percentile":{"value":0.70822037,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":99},"biblio":{"volume":"50","issue":"5","first_page":"449","last_page":"460"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8438000082969666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8438000082969666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.13040000200271606,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.009999999776482582,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ldmosfet","display_name":"LDMOSFET","score":0.9750000238418579},{"id":"https://openalex.org/keywords/trench-structure","display_name":"trench structure","score":0.9229999780654907},{"id":"https://openalex.org/keywords/buried-p-layer","display_name":"buried p-layer","score":0.8650000095367432},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.843999981880188},{"id":"https://openalex.org/keywords/electric-field-distribution","display_name":"electric field distribution","score":0.8759999871253967},{"id":"https://openalex.org/keywords/self-heating-effect","display_name":"self-heating","score":0.7609999775886536},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"power MOSFET","score":0.7580000162124634},{"id":"https://openalex.org/keywords/drift-region","display_name":"drift region","score":0.5690000057220459},{"id":"https://openalex.org/keywords/two-dimensional-device-simulation","display_name":"two-dimensional device simulation","score":0.5680000185966492}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.9054141044616699},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7561569809913635},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.7392316460609436},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.7067141532897949},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6340466737747192},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.5336920022964478},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.5193325281143188},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.46048814058303833},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4582172930240631},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4325593411922455},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3789500594139099},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.32115721702575684},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16836470365524292},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1028839647769928},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10164183378219604},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.spmi.2011.07.013","doi":"https://doi.org/10.1016/j.spmi.2011.07.013","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.spmi.2011.07.013","pdf_url":null,"source":{"id":"https://openalex.org/S107898947","display_name":"Superlattices and Microstructures","issn_l":"0749-6036","issn":["0749-6036","1096-3677"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Superlattices and Microstructures","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W64461516","https://openalex.org/W1672498908","https://openalex.org/W1971446791","https://openalex.org/W2039988729","https://openalex.org/W2041590290","https://openalex.org/W2059318935","https://openalex.org/W2104330623","https://openalex.org/W2110440774","https://openalex.org/W2128854911","https://openalex.org/W2135343620","https://openalex.org/W2147267157","https://openalex.org/W2151771954","https://openalex.org/W2162994368","https://openalex.org/W2487448771","https://openalex.org/W6679088572"],"related_works":["https://openalex.org/W2150810875","https://openalex.org/W2049681828","https://openalex.org/W798381901","https://openalex.org/W2019641438","https://openalex.org/W2162489767","https://openalex.org/W2130982900","https://openalex.org/W2135343620","https://openalex.org/W3172214674","https://openalex.org/W2104330623","https://openalex.org/W2037681428"],"abstract_inverted_index":null,"counts_by_year":[{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":6},{"year":2015,"cited_by_count":13},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}