{"id":"https://openalex.org/W1997645663","doi":"https://doi.org/10.1088/0268-1242/4/4/029","title":"Characterisation of Si III and Si IV, metastable forms of silicon at ambient pressure","display_name":"Characterisation of Si III and Si IV, metastable forms of silicon at ambient pressure","publication_year":1989,"publication_date":"1989-04-01","ids":{"openalex":"https://openalex.org/W1997645663","doi":"https://doi.org/10.1088/0268-1242/4/4/029","mag":"1997645663"},"language":"en","primary_location":{"id":"doi:10.1088/0268-1242/4/4/029","doi":"https://doi.org/10.1088/0268-1242/4/4/029","is_oa":false,"landing_page_url":"https://doi.org/10.1088/0268-1242/4/4/029","pdf_url":null,"source":{"id":"https://openalex.org/S106302738","display_name":"Semiconductor Science and Technology","issn_l":"0268-1242","issn":["0268-1242","1361-6641"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductor Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"G Weill","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405264447","display_name":"Universit\u00e9 Pierre-et-Marie-Curie","ror":"https://ror.org/01yvrd251","country_code":"FR","type":"education","lineage":["https://openalex.org/I39804081","https://openalex.org/I4405264447"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"G Weill","raw_affiliation_strings":["Univ. Pierre et Marie Curie, Paris, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. Pierre et Marie Curie, Paris, France","institution_ids":["https://openalex.org/I4405264447"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112530057","display_name":"J.L. Mansot","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405264447","display_name":"Universit\u00e9 Pierre-et-Marie-Curie","ror":"https://ror.org/01yvrd251","country_code":"FR","type":"education","lineage":["https://openalex.org/I39804081","https://openalex.org/I4405264447"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J L Mansot","raw_affiliation_strings":["Univ. Pierre et Marie Curie, Paris, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. Pierre et Marie Curie, Paris, France","institution_ids":["https://openalex.org/I4405264447"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030897819","display_name":"G\u00e9rard Sagon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405264447","display_name":"Universit\u00e9 Pierre-et-Marie-Curie","ror":"https://ror.org/01yvrd251","country_code":"FR","type":"education","lineage":["https://openalex.org/I39804081","https://openalex.org/I4405264447"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"G Sagon","raw_affiliation_strings":["Univ. Pierre et Marie Curie, Paris, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. Pierre et Marie Curie, Paris, France","institution_ids":["https://openalex.org/I4405264447"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021029867","display_name":"C. Carlone","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405264447","display_name":"Universit\u00e9 Pierre-et-Marie-Curie","ror":"https://ror.org/01yvrd251","country_code":"FR","type":"education","lineage":["https://openalex.org/I39804081","https://openalex.org/I4405264447"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C Carlone","raw_affiliation_strings":["Univ. Pierre et Marie Curie, Paris, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. Pierre et Marie Curie, Paris, France","institution_ids":["https://openalex.org/I4405264447"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081576941","display_name":"J. M. Besson","orcid":"https://orcid.org/0000-0003-2445-5491","observed_orcids":["https://orcid.org/0000-0003-2445-5491"]},"institutions":[{"id":"https://openalex.org/I4405264447","display_name":"Universit\u00e9 Pierre-et-Marie-Curie","ror":"https://ror.org/01yvrd251","country_code":"FR","type":"education","lineage":["https://openalex.org/I39804081","https://openalex.org/I4405264447"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J M Besson","raw_affiliation_strings":["Univ. Pierre et Marie Curie, Paris, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. Pierre et Marie Curie, Paris, France","institution_ids":["https://openalex.org/I4405264447"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4405264447"],"apc_list":{"value":3325,"currency":"USD","value_usd":3325},"apc_paid":null,"fwci":0.3321,"has_fulltext":false,"cited_by_count":89,"citation_normalized_percentile":{"value":0.54919028,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"4","issue":"4","first_page":"280","last_page":"282"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10413","display_name":"High-pressure geophysics and materials","score":0.8848000168800354,"subfield":{"id":"https://openalex.org/subfields/1908","display_name":"Geophysics"},"field":{"id":"https://openalex.org/fields/19","display_name":"Earth and Planetary Sciences"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10413","display_name":"High-pressure geophysics and materials","score":0.8848000168800354,"subfield":{"id":"https://openalex.org/subfields/1908","display_name":"Geophysics"},"field":{"id":"https://openalex.org/fields/19","display_name":"Earth and Planetary Sciences"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11341","display_name":"Boron and Carbon Nanomaterials Research","score":0.09369999915361404,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","score":0.010900000110268593,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon","display_name":"silicon","score":0.5820000171661377},{"id":"https://openalex.org/keywords/si-iii","display_name":"Si III","score":0.7279999852180481},{"id":"https://openalex.org/keywords/si-iv","display_name":"Si IV","score":0.9800000190734863},{"id":"https://openalex.org/keywords/metastable-phases","display_name":"metastable phases","score":0.8410000205039978},{"id":"https://openalex.org/keywords/high-pressure-synthesis","display_name":"high-pressure synthesis","score":0.6909999847412109},{"id":"https://openalex.org/keywords/phase-transformation-kinetics","display_name":"phase transformation kinetics","score":0.5730000138282776},{"id":"https://openalex.org/keywords/raman-scattering","display_name":"Raman scattering","score":0.6779999732971191},{"id":"https://openalex.org/keywords/electron-microscopy","display_name":"electron microscopy","score":0.5559999942779541},{"id":"https://openalex.org/keywords/microcrystalline-samples","display_name":"microcrystalline samples","score":0.7139999866485596},{"id":"https://openalex.org/keywords/hexagonal-diamond","display_name":"hexagonal diamond","score":0.5099999904632568}],"concepts":[{"id":"https://openalex.org/C89464430","wikidata":"https://www.wikidata.org/wiki/Q849516","display_name":"Metastability","level":2,"score":0.846583366394043},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7185735702514648},{"id":"https://openalex.org/C201370411","wikidata":"https://www.wikidata.org/wiki/Q388283","display_name":"Microcrystalline","level":2,"score":0.6696798801422119},{"id":"https://openalex.org/C143895478","wikidata":"https://www.wikidata.org/wiki/Q789775","display_name":"Ambient pressure","level":2,"score":0.617084801197052},{"id":"https://openalex.org/C2993184922","wikidata":"https://www.wikidata.org/wiki/Q3960533","display_name":"Microcrystalline silicon","level":5,"score":0.5664792656898499},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.5409302711486816},{"id":"https://openalex.org/C40003534","wikidata":"https://www.wikidata.org/wiki/Q862228","display_name":"Raman spectroscopy","level":2,"score":0.5247802138328552},{"id":"https://openalex.org/C169573571","wikidata":"https://www.wikidata.org/wiki/Q466824","display_name":"Raman scattering","level":3,"score":0.5172215700149536},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5142035484313965},{"id":"https://openalex.org/C2776921476","wikidata":"https://www.wikidata.org/wiki/Q5283","display_name":"Diamond","level":2,"score":0.4817890524864197},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47506090998649597},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.41724759340286255},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.3546578884124756},{"id":"https://openalex.org/C199289684","wikidata":"https://www.wikidata.org/wiki/Q83353","display_name":"Mineralogy","level":1,"score":0.33127543330192566},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.2815896272659302},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.16667762398719788},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.13291078805923462},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.12501683831214905},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1088/0268-1242/4/4/029","doi":"https://doi.org/10.1088/0268-1242/4/4/029","is_oa":false,"landing_page_url":"https://doi.org/10.1088/0268-1242/4/4/029","pdf_url":null,"source":{"id":"https://openalex.org/S106302738","display_name":"Semiconductor Science and Technology","issn_l":"0268-1242","issn":["0268-1242","1361-6641"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductor Science and Technology","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1969958032","https://openalex.org/W1976229637","https://openalex.org/W1986887999","https://openalex.org/W2051213499","https://openalex.org/W2065865592","https://openalex.org/W2069115098","https://openalex.org/W2089521227","https://openalex.org/W2093340546","https://openalex.org/W2105586525","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W2002418651","https://openalex.org/W4211190821","https://openalex.org/W2051213499","https://openalex.org/W2089521227","https://openalex.org/W2058375319","https://openalex.org/W2011780646","https://openalex.org/W4200460003","https://openalex.org/W2951966042","https://openalex.org/W4961603","https://openalex.org/W2775012456"],"abstract_inverted_index":{"Two":[0],"crystalline":[1],"phases":[2],"of":[3,25,48],"silicon:":[4],"Si":[5,9,54,57],"III":[6,55],"(BCC)":[7],"and":[8,59],"IV":[10],"(hexagonal":[11],"diamond)":[12],"are":[13,68],"known":[14],"to":[15,56],"be":[16,29],"metastable":[17],"at":[18,37],"ambient.":[19],"Pure,":[20],"single":[21],"phase,":[22],"microcrystalline":[23],"samples":[24],"both":[26],"varieties":[27],"may":[28],"prepared":[30],"by":[31,73],"high-pressure":[32],"synthesis":[33],"above":[34],"18":[35],"GPa":[36],"300":[38],"K.":[39],"The":[40],"authors":[41],"report":[42],"on":[43,64],"high-resolution":[44],"electron":[45],"microscopy,":[46],"kinetics":[47],"the":[49],"temperature":[50],"driven":[51],"phase-change":[52],"from":[53],"IV,":[58],"Raman":[60],"scattering":[61],"measurements":[62],"performed":[63],"these":[65],"samples.":[66],"Results":[67],"compared":[69],"with":[70],"those":[71],"obtained":[72],"other":[74],"characterisation":[75],"methods":[76],"and/or":[77],"published":[78],"in":[79],"earlier":[80],"works.":[81]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":5},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-08T09:06:37.294493","created_date":"2016-06-24T00:00:00"}