{"id":"https://openalex.org/W1997128690","doi":"https://doi.org/10.1016/s0022-0248(96)01202-x","title":"Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces","display_name":"Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces","publication_year":1997,"publication_date":"1997-05-01","ids":{"openalex":"https://openalex.org/W1997128690","doi":"https://doi.org/10.1016/s0022-0248(96)01202-x","mag":"1997128690"},"language":"en","primary_location":{"id":"doi:10.1016/s0022-0248(96)01202-x","doi":"https://doi.org/10.1016/s0022-0248(96)01202-x","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(96)01202-x","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5037419608","display_name":"Minghwei Hong","orcid":"https://orcid.org/0000-0003-4657-0933","observed_orcids":["https://orcid.org/0000-0003-4657-0933"]},"institutions":[{"id":"https://openalex.org/I4387152956","display_name":"Alcatel-Lucent (France)","ror":"https://ror.org/024850w61","country_code":"FR","type":"company","lineage":["https://openalex.org/I2738502077","https://openalex.org/I4210149358","https://openalex.org/I4387152956"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"M. Hong","raw_affiliation_strings":["Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA","institution_ids":["https://openalex.org/I4387152956"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112590456","display_name":"Joseph P. Mannaerts","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4387152956","display_name":"Alcatel-Lucent (France)","ror":"https://ror.org/024850w61","country_code":"FR","type":"company","lineage":["https://openalex.org/I2738502077","https://openalex.org/I4210149358","https://openalex.org/I4387152956"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.P. Mannaerts","raw_affiliation_strings":["Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA","institution_ids":["https://openalex.org/I4387152956"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111334680","display_name":"J. E. Bower","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4387152956","display_name":"Alcatel-Lucent (France)","ror":"https://ror.org/024850w61","country_code":"FR","type":"company","lineage":["https://openalex.org/I2738502077","https://openalex.org/I4210149358","https://openalex.org/I4387152956"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.E. Bower","raw_affiliation_strings":["Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA","institution_ids":["https://openalex.org/I4387152956"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065370235","display_name":"J. Kwo","orcid":"https://orcid.org/0000-0002-5088-6677","observed_orcids":["https://orcid.org/0000-0002-5088-6677"]},"institutions":[{"id":"https://openalex.org/I4387152956","display_name":"Alcatel-Lucent (France)","ror":"https://ror.org/024850w61","country_code":"FR","type":"company","lineage":["https://openalex.org/I2738502077","https://openalex.org/I4210149358","https://openalex.org/I4387152956"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J. Kwo","raw_affiliation_strings":["Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA","institution_ids":["https://openalex.org/I4387152956"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014663392","display_name":"M. Passlack","orcid":"https://orcid.org/0000-0003-3654-2250","observed_orcids":["https://orcid.org/0000-0003-3654-2250"]},"institutions":[{"id":"https://openalex.org/I4387152956","display_name":"Alcatel-Lucent (France)","ror":"https://ror.org/024850w61","country_code":"FR","type":"company","lineage":["https://openalex.org/I2738502077","https://openalex.org/I4210149358","https://openalex.org/I4387152956"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"M. Passlack","raw_affiliation_strings":["Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA","institution_ids":["https://openalex.org/I4387152956"]}]},{"author_position":"middle","author":{"id":null,"display_name":"W.-Y. Hwang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4387152956","display_name":"Alcatel-Lucent (France)","ror":"https://ror.org/024850w61","country_code":"FR","type":"company","lineage":["https://openalex.org/I2738502077","https://openalex.org/I4210149358","https://openalex.org/I4387152956"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"W.-Y. Hwang","raw_affiliation_strings":["Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA","institution_ids":["https://openalex.org/I4387152956"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5107441728","display_name":"Li-Wei Tu","orcid":"https://orcid.org/0000-0001-8462-7203","observed_orcids":["https://orcid.org/0000-0001-8462-7203"]},"institutions":[{"id":"https://openalex.org/I4387152956","display_name":"Alcatel-Lucent (France)","ror":"https://ror.org/024850w61","country_code":"FR","type":"company","lineage":["https://openalex.org/I2738502077","https://openalex.org/I4210149358","https://openalex.org/I4387152956"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"L.W. Tu","raw_affiliation_strings":["Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA","institution_ids":["https://openalex.org/I4387152956"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5037419608"],"corresponding_institution_ids":["https://openalex.org/I4387152956"],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":0.4808,"has_fulltext":false,"cited_by_count":72,"citation_normalized_percentile":{"value":0.6309557,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"175-176","issue":null,"first_page":"422","last_page":"427"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8755000233650208,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8755000233650208,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.1071000024676323,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.01080000028014183,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ga2o3","display_name":"gallium oxide","score":0.8059999942779541},{"id":"https://openalex.org/keywords/gadolinium-oxide","display_name":"gadolinium oxide","score":0.8519999980926514},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"GaAs","score":0.753000020980835},{"id":"https://openalex.org/keywords/interface-passivation","display_name":"interface passivation","score":0.7480000257492065},{"id":"https://openalex.org/keywords/interface-state-density","display_name":"interface state density","score":0.8149999976158142},{"id":"https://openalex.org/keywords/interface-recombination-velocity","display_name":"interface recombination velocity","score":0.9710000157356262},{"id":"https://openalex.org/keywords/heterostructures","display_name":"heterostructures","score":0.6629999876022339},{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"molecular beam epitaxy","score":0.7289999723434448}],"concepts":[{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.8561563491821289},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.7448021173477173},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.7075985074043274},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.69694983959198},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6537063121795654},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.602320671081543},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5889226198196411},{"id":"https://openalex.org/C2777822432","wikidata":"https://www.wikidata.org/wiki/Q216681","display_name":"In situ","level":2,"score":0.49584969878196716},{"id":"https://openalex.org/C2781059571","wikidata":"https://www.wikidata.org/wiki/Q3706001","display_name":"Thermal desorption","level":4,"score":0.4458956718444824},{"id":"https://openalex.org/C162711632","wikidata":"https://www.wikidata.org/wiki/Q905514","display_name":"Desorption","level":3,"score":0.4354701042175293},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.4318179488182068},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.3902674913406372},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.34941375255584717},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.29079025983810425},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.22181043028831482},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2215312421321869},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0760335624217987},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.05825388431549072},{"id":"https://openalex.org/C150394285","wikidata":"https://www.wikidata.org/wiki/Q180254","display_name":"Adsorption","level":2,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0022-0248(96)01202-x","doi":"https://doi.org/10.1016/s0022-0248(96)01202-x","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(96)01202-x","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320879","display_name":"Deutsche Forschungsgemeinschaft","ror":"https://ror.org/018mejw64"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W645842219","https://openalex.org/W1964321827","https://openalex.org/W1964370306","https://openalex.org/W1965403895","https://openalex.org/W1979899700","https://openalex.org/W1993695440","https://openalex.org/W2018374841","https://openalex.org/W2027603968","https://openalex.org/W2027706680","https://openalex.org/W2030724864","https://openalex.org/W2040306421","https://openalex.org/W2057334963","https://openalex.org/W2065191063","https://openalex.org/W2070982010","https://openalex.org/W2079867775","https://openalex.org/W2087774071"],"related_works":["https://openalex.org/W1989469703","https://openalex.org/W2112762124","https://openalex.org/W2500988369","https://openalex.org/W2067627506","https://openalex.org/W2150131409","https://openalex.org/W2053876801","https://openalex.org/W2081294238","https://openalex.org/W2069491031","https://openalex.org/W1733264050","https://openalex.org/W2083196051"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":6},{"year":2014,"cited_by_count":5},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":3}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}