{"id":"https://openalex.org/W1996797318","doi":"https://doi.org/10.1109/icmens.2009.21","title":"Design of SiGe BiCMOS LNA with ESD Protection for Multi-band Navigation Receiver Front-End","display_name":"Design of SiGe BiCMOS LNA with ESD Protection for Multi-band Navigation Receiver Front-End","publication_year":2009,"publication_date":"2009-12-01","ids":{"openalex":"https://openalex.org/W1996797318","doi":"https://doi.org/10.1109/icmens.2009.21","mag":"1996797318"},"language":"en","primary_location":{"id":"doi:10.1109/icmens.2009.21","doi":"https://doi.org/10.1109/icmens.2009.21","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icmens.2009.21","pdf_url":null,"source":{"id":"https://openalex.org/S4306419674","display_name":"International Conference on MEMS, NANO, and Smart Systems","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 Fifth International Conference on MEMS NANO, and Smart Systems","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050305349","display_name":"Xunping Hou","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xunping Hou","raw_affiliation_strings":["Beijing Microelectron. Technol. Inst., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectron. Technol. Inst., Beijing, China","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030647669","display_name":"Yuanfu Zhao","orcid":"https://orcid.org/0000-0002-2097-7172","observed_orcids":["https://orcid.org/0000-0002-2097-7172","https://orcid.org/0000-0002-6786-6293"]},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuanfu Zhao","raw_affiliation_strings":["Beijing Microelectron. Technol. Inst., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectron. Technol. Inst., Beijing, China","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100367603","display_name":"Weimin Li","orcid":"https://orcid.org/0000-0001-8134-2157","observed_orcids":["https://orcid.org/0000-0001-8134-2157"]},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weimin Li","raw_affiliation_strings":["Beijing Microelectron. Technol. Inst., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectron. Technol. Inst., Beijing, China","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101388422","display_name":"Wen Wu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wu Wen","raw_affiliation_strings":["Beijing Microelectron. Technol. Inst., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectron. Technol. Inst., Beijing, China","institution_ids":["https://openalex.org/I4210089056"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210089056"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.06280773,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"51","issue":null,"first_page":"93","last_page":"96"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.0017000000225380063,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sige-bicmos","display_name":"SiGe BiCMOS","score":0.9070000052452087},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"low noise amplifier","score":0.972000002861023},{"id":"https://openalex.org/keywords/esd-protection","display_name":"electrostatic discharge protection","score":0.9679999947547913},{"id":"https://openalex.org/keywords/front-end","display_name":"frontend","score":0.546999990940094},{"id":"https://openalex.org/keywords/noise-figure","display_name":"noise figure","score":0.9169999957084656},{"id":"https://openalex.org/keywords/linearity","display_name":"linearity","score":0.6539999842643738},{"id":"https://openalex.org/keywords/process-corners","display_name":"process corners","score":0.6759999990463257},{"id":"https://openalex.org/keywords/temperature-variation","display_name":"temperature variation","score":0.8029999732971191},{"id":"https://openalex.org/keywords/power-supply-variation","display_name":"power supply variation","score":0.7369999885559082}],"concepts":[{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.7681972980499268},{"id":"https://openalex.org/C2780389399","wikidata":"https://www.wikidata.org/wiki/Q367849","display_name":"Silicon-germanium","level":3,"score":0.6756879091262817},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5651670098304749},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.5292985439300537},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.48808276653289795},{"id":"https://openalex.org/C74524168","wikidata":"https://www.wikidata.org/wiki/Q1074539","display_name":"Integrated circuit design","level":2,"score":0.4756345748901367},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.4474301338195801},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4082477390766144},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4052485227584839},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33603501319885254},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.3298308849334717},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3216237425804138},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.29236048460006714},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.28311991691589355},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2730502784252167},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.184699147939682},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.11564868688583374},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.1027635931968689}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icmens.2009.21","doi":"https://doi.org/10.1109/icmens.2009.21","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icmens.2009.21","pdf_url":null,"source":{"id":"https://openalex.org/S4306419674","display_name":"International Conference on MEMS, NANO, and Smart Systems","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 Fifth International Conference on MEMS NANO, and Smart Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2065707837","https://openalex.org/W2104907878","https://openalex.org/W2121035442","https://openalex.org/W2126206133","https://openalex.org/W2153697456"],"related_works":["https://openalex.org/W2126206133","https://openalex.org/W2902778139","https://openalex.org/W1966488624","https://openalex.org/W2537619541","https://openalex.org/W2136307388","https://openalex.org/W2038733426","https://openalex.org/W2141341100","https://openalex.org/W2149977089","https://openalex.org/W2156526661","https://openalex.org/W2140513313"],"abstract_inverted_index":{"An":[0],"ESD":[1,36],"protected,":[2],"SiGe":[3,50],"BiCMOS":[4,51],"wide-band":[5],"LNA":[6,19,44],"operating":[7],"at":[8],"1.1-1.7":[9],"GHz":[10],"is":[11,30,45,66,90],"presented":[12],"in":[13,47],"this":[14],"paper.":[15],"The":[16,32,43,57,88],"cascoded":[17],"common-emitter":[18],"with":[20,53,69,84],"an":[21,85],"LC":[22],"input":[23],"matching":[24],"network":[25],"and":[26,74,98,102],"shunt":[27],"peaked":[28],"load":[29],"adopted.":[31],"effects":[33],"of":[34,76,81,95,100],"the":[35,39,63,93],"protection":[37],"on":[38],"performance":[40],"are":[41],"discussed.":[42],"implemented":[46],"a":[48,70],"0.35-\u03bcm":[49],"process":[52,96],"fT=":[54],"45":[55],"GHz.":[56],"post":[58],"simulation":[59],"results":[60],"show":[61],"that":[62],"noise":[64],"figure":[65],"1.7":[67],"dB":[68],"high":[71],"S21":[72],"(22.5dB)":[73],"IIP3":[75],"-17dBm,":[77],"consuming":[78],"total":[79],"current":[80],"8.1":[82],"mA":[83],"output":[86],"buffer.":[87],"circuit":[89],"simulated":[91],"under":[92],"combination":[94],"corners":[97],"variation":[99],"temperature":[101],"power":[103],"supply":[104],"voltage.":[105]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}