{"id":"https://openalex.org/W1995079718","doi":"https://doi.org/10.1063/1.4729154","title":"Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors","display_name":"Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors","publication_year":2012,"publication_date":"2012-06-11","ids":{"openalex":"https://openalex.org/W1995079718","doi":"https://doi.org/10.1063/1.4729154","mag":"1995079718"},"language":"en","primary_location":{"id":"doi:10.1063/1.4729154","doi":"https://doi.org/10.1063/1.4729154","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.4729154","pdf_url":"https://aip.scitation.org/doi/pdf/10.1063/1.4729154","source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://aip.scitation.org/doi/pdf/10.1063/1.4729154","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011266235","display_name":"Vinod Ravindran","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1288283403","display_name":"Georgia Tech-Europe","ror":"https://ror.org/02m5dy175","country_code":"FR","type":"education","lineage":["https://openalex.org/I1288283403"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]},{"id":"https://openalex.org/I4210089931","display_name":"Georgia Tech-CNRS Laboratory","ror":"https://ror.org/00avmbz91","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931","https://openalex.org/I4210095849","https://openalex.org/I4405256580"]}],"countries":["FR","US"],"is_corresponding":false,"raw_author_name":"Vinod Ravindran","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30324-0250, USA","UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30324-0250, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France","institution_ids":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Mohamed Boucherit","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]},{"id":"https://openalex.org/I59807433","display_name":"Universit\u00e9 Lille Nord de France","ror":"https://ror.org/03btvgn05","country_code":"FR","type":"education","lineage":["https://openalex.org/I2279609970","https://openalex.org/I59807433"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Mohamed Boucherit","raw_affiliation_strings":["IEMN-CNRS 8520, PRES Universit\u00e9 Lille Nord de France 3 , Avenue Poincar\u00e9, Cit\u00e9 Scientifique, 59652 Villeneuve d\u2019Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IEMN-CNRS 8520, PRES Universit\u00e9 Lille Nord de France 3 , Avenue Poincar\u00e9, Cit\u00e9 Scientifique, 59652 Villeneuve d\u2019Ascq, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210123471","https://openalex.org/I59807433"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077038155","display_name":"Ali Soltani","orcid":"https://orcid.org/0000-0001-6185-0760","observed_orcids":["https://orcid.org/0000-0001-6185-0760"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]},{"id":"https://openalex.org/I59807433","display_name":"Universit\u00e9 Lille Nord de France","ror":"https://ror.org/03btvgn05","country_code":"FR","type":"education","lineage":["https://openalex.org/I2279609970","https://openalex.org/I59807433"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Ali Soltani","raw_affiliation_strings":["IEMN-CNRS 8520, PRES Universit\u00e9 Lille Nord de France 3 , Avenue Poincar\u00e9, Cit\u00e9 Scientifique, 59652 Villeneuve d\u2019Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IEMN-CNRS 8520, PRES Universit\u00e9 Lille Nord de France 3 , Avenue Poincar\u00e9, Cit\u00e9 Scientifique, 59652 Villeneuve d\u2019Ascq, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210123471","https://openalex.org/I59807433"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109584863","display_name":"S. Gautier","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102475099","display_name":"Sup\u00e9lec","ror":"https://ror.org/00n7gwn90","country_code":"FR","type":"education","lineage":["https://openalex.org/I102475099","https://openalex.org/I277688954","https://openalex.org/I4210107720"]},{"id":"https://openalex.org/I1288283403","display_name":"Georgia Tech-Europe","ror":"https://ror.org/02m5dy175","country_code":"FR","type":"education","lineage":["https://openalex.org/I1288283403"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]},{"id":"https://openalex.org/I4210089931","display_name":"Georgia Tech-CNRS Laboratory","ror":"https://ror.org/00avmbz91","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931","https://openalex.org/I4210095849","https://openalex.org/I4405256580"]},{"id":"https://openalex.org/I4210148061","display_name":"Laboratoire Mat\u00e9riaux, Optique, Photonique et Syst\u00e8mes","ror":"https://ror.org/055swm364","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I277688954","https://openalex.org/I4210107720","https://openalex.org/I4210110412","https://openalex.org/I4210139971","https://openalex.org/I4210148061","https://openalex.org/I90183372"]},{"id":"https://openalex.org/I4405264049","display_name":"Universit\u00e9 Paul Verlaine - Metz","ror":"https://ror.org/00t8qmx52","country_code":"FR","type":"education","lineage":["https://openalex.org/I4405264049","https://openalex.org/I90183372"]}],"countries":["FR","US"],"is_corresponding":false,"raw_author_name":"Simon Gautier","raw_affiliation_strings":["Laboratoire Mat\u00e9riaux Optiques, Photonique et Syst\u00e8me 4 , EA 4423, Universit\u00e9 Paul Verlaine and Sup\u00e9lec, 2 rue E. Belin 57070 Metz, France","UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire Mat\u00e9riaux Optiques, Photonique et Syst\u00e8me 4 , EA 4423, Universit\u00e9 Paul Verlaine and Sup\u00e9lec, 2 rue E. Belin 57070 Metz, France","institution_ids":["https://openalex.org/I102475099","https://openalex.org/I4210148061","https://openalex.org/I4405264049"]},{"raw_affiliation_string":"UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France","institution_ids":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105361338","display_name":"Tarik Moudakir","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1288283403","display_name":"Georgia Tech-Europe","ror":"https://ror.org/02m5dy175","country_code":"FR","type":"education","lineage":["https://openalex.org/I1288283403"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]},{"id":"https://openalex.org/I4210089931","display_name":"Georgia Tech-CNRS Laboratory","ror":"https://ror.org/00avmbz91","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931","https://openalex.org/I4210095849","https://openalex.org/I4405256580"]}],"countries":["FR","US"],"is_corresponding":false,"raw_author_name":"Tarik Moudakir","raw_affiliation_strings":["UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France","institution_ids":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049176654","display_name":"Jeramy Ray Dickerson","orcid":"https://orcid.org/0000-0002-7954-542X","observed_orcids":["https://orcid.org/0000-0002-7954-542X"]},"institutions":[{"id":"https://openalex.org/I1288283403","display_name":"Georgia Tech-Europe","ror":"https://ror.org/02m5dy175","country_code":"FR","type":"education","lineage":["https://openalex.org/I1288283403"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]},{"id":"https://openalex.org/I4210089931","display_name":"Georgia Tech-CNRS Laboratory","ror":"https://ror.org/00avmbz91","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931","https://openalex.org/I4210095849","https://openalex.org/I4405256580"]}],"countries":["FR","US"],"is_corresponding":false,"raw_author_name":"Jeramy Dickerson","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30324-0250, USA","UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30324-0250, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France","institution_ids":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058800678","display_name":"Paul L. Voss","orcid":"https://orcid.org/0000-0002-3127-4085","observed_orcids":["https://orcid.org/0000-0002-3127-4085"]},"institutions":[{"id":"https://openalex.org/I1288283403","display_name":"Georgia Tech-Europe","ror":"https://ror.org/02m5dy175","country_code":"FR","type":"education","lineage":["https://openalex.org/I1288283403"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]},{"id":"https://openalex.org/I4210089931","display_name":"Georgia Tech-CNRS Laboratory","ror":"https://ror.org/00avmbz91","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931","https://openalex.org/I4210095849","https://openalex.org/I4405256580"]}],"countries":["FR","US"],"is_corresponding":false,"raw_author_name":"Paul L. Voss","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30324-0250, USA","UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30324-0250, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France","institution_ids":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031304266","display_name":"Marie\u2010Antoinette di Forte\u2010Poisson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210152719","display_name":"III V Lab","ror":"https://ror.org/0509ggw88","country_code":"FR","type":"facility","lineage":["https://openalex.org/I4210152719"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Marie-Antoinette di Forte-Poisson","raw_affiliation_strings":["Alcatel-Thales III-V Laboratory 5 , 91461 Marcoussis, France","III-V Lab - Alcatel-Thales III-V Lab (Campus de Polytechnique \r\n1, avenue Augustin Fresnel \r\nF-91767 Palaiseau - France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Alcatel-Thales III-V Laboratory 5 , 91461 Marcoussis, France","institution_ids":["https://openalex.org/I4210152719"]},{"raw_affiliation_string":"III-V Lab - Alcatel-Thales III-V Lab (Campus de Polytechnique \r\n1, avenue Augustin Fresnel \r\nF-91767 Palaiseau - France)","institution_ids":["https://openalex.org/I4210152719"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111829464","display_name":"J.C. de Jaeger","orcid":"https://orcid.org/0000-0002-9033-7672","observed_orcids":["https://orcid.org/0000-0002-9033-7672"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]},{"id":"https://openalex.org/I59807433","display_name":"Universit\u00e9 Lille Nord de France","ror":"https://ror.org/03btvgn05","country_code":"FR","type":"education","lineage":["https://openalex.org/I2279609970","https://openalex.org/I59807433"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Jean-Claude De Jaeger","raw_affiliation_strings":["IEMN-CNRS 8520, PRES Universit\u00e9 Lille Nord de France 3 , Avenue Poincar\u00e9, Cit\u00e9 Scientifique, 59652 Villeneuve d\u2019Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IEMN-CNRS 8520, PRES Universit\u00e9 Lille Nord de France 3 , Avenue Poincar\u00e9, Cit\u00e9 Scientifique, 59652 Villeneuve d\u2019Ascq, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210123471","https://openalex.org/I59807433"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075317216","display_name":"A. Ougazzaden","orcid":"https://orcid.org/0000-0002-9959-5280","observed_orcids":["https://orcid.org/0000-0002-9959-5280"]},"institutions":[{"id":"https://openalex.org/I1288283403","display_name":"Georgia Tech-Europe","ror":"https://ror.org/02m5dy175","country_code":"FR","type":"education","lineage":["https://openalex.org/I1288283403"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]},{"id":"https://openalex.org/I4210089931","display_name":"Georgia Tech-CNRS Laboratory","ror":"https://ror.org/00avmbz91","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931","https://openalex.org/I4210095849","https://openalex.org/I4405256580"]}],"countries":["FR","US"],"is_corresponding":false,"raw_author_name":"Abdallah Ougazzaden","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30324-0250, USA","UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30324-0250, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine 2 , 2-3 rue Marconi, 57070 Metz-Technop\u00f4le, France","institution_ids":["https://openalex.org/I1288283403","https://openalex.org/I1294671590","https://openalex.org/I130701444","https://openalex.org/I4210089931"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":10,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4842,"has_fulltext":true,"cited_by_count":32,"citation_normalized_percentile":{"value":0.60762032,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"100","issue":"24","first_page":"243503-1-4","last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/algan-gan-heterostructures","display_name":"AlGaN/GaN heterostructures","score":0.7580000162124634},{"id":"https://openalex.org/keywords/high-electron-mobility-transistors","display_name":"high electron mobility transistors","score":0.9860000014305115},{"id":"https://openalex.org/keywords/leakage-current-reduction","display_name":"leakage current reduction","score":0.6309999823570251},{"id":"https://openalex.org/keywords/current-collapse","display_name":"current collapse","score":0.7710000276565552},{"id":"https://openalex.org/keywords/charge-trapping","display_name":"charge trapping","score":0.675000011920929},{"id":"https://openalex.org/keywords/gan-buffer","display_name":"GaN buffer","score":0.43799999356269836}],"concepts":[{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7337733507156372},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.718305230140686},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6286336183547974},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5978078246116638},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5369550585746765},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.4926524758338928},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4388180673122406},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.4383031129837036},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.41122496128082275},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23837628960609436},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1304645836353302},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1292770504951477},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.09592685103416443},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06138730049133301},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1063/1.4729154","doi":"https://doi.org/10.1063/1.4729154","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.4729154","pdf_url":"https://aip.scitation.org/doi/pdf/10.1063/1.4729154","source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},{"id":"pmh:oai:HAL:hal-00787871v1","doi":null,"is_oa":true,"landing_page_url":"https://hal.science/hal-00787871","pdf_url":"https://hal.science/hal-00787871v1/file/Ravindran_2012_1.4729154.pdf","source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":{"id":"doi:10.1063/1.4729154","doi":"https://doi.org/10.1063/1.4729154","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.4729154","pdf_url":"https://aip.scitation.org/doi/pdf/10.1063/1.4729154","source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1995079718.pdf","grobid_xml":"https://content.openalex.org/works/W1995079718.grobid-xml"},"referenced_works_count":23,"referenced_works":["https://openalex.org/W1975745402","https://openalex.org/W1985453002","https://openalex.org/W1989282407","https://openalex.org/W1993852442","https://openalex.org/W1996729420","https://openalex.org/W1998144789","https://openalex.org/W1998591663","https://openalex.org/W2011269449","https://openalex.org/W2021699682","https://openalex.org/W2024211701","https://openalex.org/W2044139969","https://openalex.org/W2047060911","https://openalex.org/W2054951753","https://openalex.org/W2063865028","https://openalex.org/W2072239646","https://openalex.org/W2072910558","https://openalex.org/W2081456112","https://openalex.org/W2085628726","https://openalex.org/W2111795186","https://openalex.org/W2123595383","https://openalex.org/W2150959124","https://openalex.org/W2151628329","https://openalex.org/W2171489710"],"related_works":["https://openalex.org/W2103135199","https://openalex.org/W2344001707","https://openalex.org/W3164687637","https://openalex.org/W2904966238","https://openalex.org/W2596845277","https://openalex.org/W2111795186","https://openalex.org/W2972738625","https://openalex.org/W1989778585","https://openalex.org/W4288074013","https://openalex.org/W4413918356"],"abstract_inverted_index":{"A":[0,88],"GaN/ultrathin":[1],"BGaN/GaN":[2],"heterojunction":[3],"is":[4],"used":[5],"in":[6,35,85],"AlGaN/GaN":[7,61],"high":[8],"electron":[9,28],"mobility":[10],"transistors":[11],"(HEMTs)":[12],"to":[13,18,21,40,59],"provide":[14],"an":[15],"electrostatic":[16],"barrier":[17,50],"electrons":[19],"and":[20,47,77],"improve":[22],"the":[23,26,36],"confinement":[24],"of":[25,56,72,93],"2-dimensional":[27],"gas.":[29],"BGaN":[30,66],"back-barrier":[31,67],"layers":[32],"limit":[33],"leakage":[34],"GaN":[37],"buffer":[38],"thanks":[39],"two":[41],"effects:":[42],"a":[43,48,69,81],"polarization-induced":[44],"band":[45],"discontinuity":[46],"resistive":[49],"originating":[51],"from":[52],"excellent":[53],"insulation":[54],"properties":[55],"BGaN.":[57],"Compared":[58],"conventional":[60],"HEMTs,":[62],"structures":[63],"grown":[64],"with":[65],"showed":[68],"significant":[70],"improvement":[71],"static":[73],"performances,":[74],"transport":[75],"properties,":[76],"trapping":[78],"effects":[79],"involving":[80],"limited":[82],"current":[83,91],"collapse":[84],"dynamic":[86],"regime.":[87],"DC":[89],"maximum":[90],"increase":[92],"58.7%":[94],"was":[95],"observed.":[96]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":6},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}