{"id":"https://openalex.org/W1994913640","doi":"https://doi.org/10.1002/pssc.201200657","title":"Mechanisms behind efficiency droop and degradation in InGaN/GaN LEDs","display_name":"Mechanisms behind efficiency droop and degradation in InGaN/GaN LEDs","publication_year":2013,"publication_date":"2013-01-22","ids":{"openalex":"https://openalex.org/W1994913640","doi":"https://doi.org/10.1002/pssc.201200657","mag":"1994913640"},"language":"en","primary_location":{"id":"doi:10.1002/pssc.201200657","doi":"https://doi.org/10.1002/pssc.201200657","is_oa":false,"landing_page_url":"https://doi.org/10.1002/pssc.201200657","pdf_url":null,"source":{"id":"https://openalex.org/S4210174949","display_name":"Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics","issn_l":"1610-1634","issn":["1610-1634","1610-1642","1862-6351"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","norway-1","poland-40"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"physica status solidi c","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010163929","display_name":"Natalia M. Shmidt","orcid":"https://orcid.org/0000-0003-3585-5116","observed_orcids":["https://orcid.org/0000-0003-3585-5116"]},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":true,"raw_author_name":"Natalia Shmidt","raw_affiliation_strings":["Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024658252","display_name":"A. A. Greshnov","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Andrew Greshnov","raw_affiliation_strings":["Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017999760","display_name":"A. E. Chernyakov","orcid":"https://orcid.org/0000-0002-8153-9512","observed_orcids":["https://orcid.org/0000-0002-8153-9512"]},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Anton Chernyakov","raw_affiliation_strings":["Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017963404","display_name":"M. E. Levinshte\u012dn","orcid":"https://orcid.org/0000-0002-9712-7387","observed_orcids":["https://orcid.org/0000-0002-9712-7387"]},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Michael Levinshtein","raw_affiliation_strings":["Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Alexander Zakgeim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Alexander Zakgeim","raw_affiliation_strings":["Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030154040","display_name":"E. I. Shabunina","orcid":"https://orcid.org/0000-0003-4457-8149","observed_orcids":["https://orcid.org/0000-0003-4457-8149"]},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Evgeniia Shabunina","raw_affiliation_strings":["Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5010163929"],"corresponding_institution_ids":["https://openalex.org/I95568926"],"apc_list":null,"apc_paid":null,"fwci":0.8765,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.71293442,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"10","issue":"3","first_page":"332","last_page":"334"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ingan-gan-leds","display_name":"InGaN/GaN LEDs","score":0.9639999866485596},{"id":"https://openalex.org/keywords/efficiency-droop","display_name":"efficiency roll-off","score":0.972000002861023},{"id":"https://openalex.org/keywords/device-degradation","display_name":"device degradation","score":0.7760000228881836},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.7590000033378601},{"id":"https://openalex.org/keywords/nonradiative-recombination","display_name":"nonradiative recombination","score":0.9539999961853027},{"id":"https://openalex.org/keywords/low-frequency-noise","display_name":"low-frequency noise","score":0.765999972820282},{"id":"https://openalex.org/keywords/tunneling-current","display_name":"tunneling current","score":0.8579999804496765},{"id":"https://openalex.org/keywords/dislocation-boundaries","display_name":"dislocation boundaries","score":0.8009999990463257},{"id":"https://openalex.org/keywords/local-overheating","display_name":"local overheating","score":0.847000002861023}],"concepts":[{"id":"https://openalex.org/C40760162","wikidata":"https://www.wikidata.org/wiki/Q10920295","display_name":"Voltage droop","level":4,"score":0.9389309883117676},{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.8603297472000122},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7262290120124817},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6616494059562683},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.502547025680542},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.1920870840549469},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13786211609840393},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.07163390517234802},{"id":"https://openalex.org/C49324399","wikidata":"https://www.wikidata.org/wiki/Q466758","display_name":"Voltage divider","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/pssc.201200657","doi":"https://doi.org/10.1002/pssc.201200657","is_oa":false,"landing_page_url":"https://doi.org/10.1002/pssc.201200657","pdf_url":null,"source":{"id":"https://openalex.org/S4210174949","display_name":"Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics","issn_l":"1610-1634","issn":["1610-1634","1610-1642","1862-6351"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","norway-1","poland-40"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"physica status solidi c","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3045503160","https://openalex.org/W3020321188","https://openalex.org/W3114381968","https://openalex.org/W1968976027","https://openalex.org/W2243317582","https://openalex.org/W2793135635","https://openalex.org/W4205614338","https://openalex.org/W3006114209","https://openalex.org/W2000794208","https://openalex.org/W4241922613"],"abstract_inverted_index":{"Abstract":[0],"The":[1,30,51,94,156],"results":[2],"of":[3,40,54,59,87,97,119,126,135,142,170],"low":[4],"frequency":[5],"noise":[6],"studies":[7],"in":[8,78,84,104,133,178],"power":[9,179],"blue":[10],"InGaN/GaN":[11,49,180],"LEDs":[12,88,181],"with":[13,109],"external":[14],"quantum":[15],"efficiency":[16,85,171],"30\u201045%":[17],"classified":[18],"by":[19],"leakage":[20],"current":[21,106,136],"(LC)":[22],"values":[23,32,107],"before":[24],"and":[25,57,138,162,173],"after":[26],"degradation":[27,98,176],"are":[28,158],"reported.":[29],"LC":[31,65],"at":[33,89,111,146],"V<":[34],"2V":[35],"integrally":[36],"characterize":[37],"electrical":[38],"properties":[39],"extended":[41,55,79],"defect":[42,80],"system":[43,81],"(EDS)":[44,82],"that":[45,72],"is":[46],"typical":[47],"for":[48],"LEDs.":[50],"smaller":[52],"concentration":[53],"defects":[56],"length":[58],"dilatation,":[60],"dislocation":[61],"boundaries,":[62],"the":[63,140,174],"lower":[64],"value":[66],"is.":[67],"It":[68],"has":[69],"been":[70,154],"demonstrated":[71],"non\u2010radiative":[73],"recombination":[74],"processes":[75,99],"(NRRP)":[76],"localized":[77,159],"contribute":[83],"droop":[86,172],"j":[90,147],"\u2265":[91],"10":[92,149],"A/cm2.":[93],"main":[95],"characteristics":[96],"such":[100],"as:":[101],"(1)":[102],"increase":[103,132],"tunneling":[105],"related":[108],"EDS,":[110],"U":[112],"\u2264":[113],"2":[114],"V,":[115],"(2)":[116],"strong":[117],"deterioration":[118],"p\u2010n":[120],"junction":[121],"rectification":[122],"properties,":[123],"(3)":[124],"formation":[125,141],"conductive":[127],"paths":[128],"along":[129,151,160],"EDS;":[130],"(4)":[131],"non\u2010uniformity":[134],"distribution,":[137],"(5)":[139],"local":[143],"overheating":[144],"channels":[145],">":[148],"A/cm2":[150],"EDS":[152,161],"had":[153],"revealed.":[155],"NRRP":[157],"can":[163],"be":[164],"considered":[165],"as":[166],"a":[167],"general":[168],"mechanism":[169],"ambiguous":[175],"process":[177],"(\u00a9":[182],"2013":[183],"WILEY\u2010VCH":[184],"Verlag":[185],"GmbH":[186],"&":[187],"Co.":[188],"KGaA,":[189],"Weinheim)":[190]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":3}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}
