{"id":"https://openalex.org/W1994863929","doi":"https://doi.org/10.1063/1.2717141","title":"Controlling line-edge roughness and reactive ion etch lag in sub-150 nm features in borophosphosilicate glass","display_name":"Controlling line-edge roughness and reactive ion etch lag in sub-150 nm features in borophosphosilicate glass","publication_year":2007,"publication_date":"2007-04-01","ids":{"openalex":"https://openalex.org/W1994863929","doi":"https://doi.org/10.1063/1.2717141","mag":"1994863929"},"language":"en","primary_location":{"id":"doi:10.1063/1.2717141","doi":"https://doi.org/10.1063/1.2717141","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2717141","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5078438587","display_name":"Parijat Bhatnagar","orcid":"https://orcid.org/0000-0001-9783-3364","observed_orcids":["https://orcid.org/0000-0001-9783-3364"]},"institutions":[{"id":"https://openalex.org/I205783295","display_name":"Cornell University","ror":"https://ror.org/05bnh6r87","country_code":"US","type":"education","lineage":["https://openalex.org/I205783295"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Parijat Bhatnagar","raw_affiliation_strings":["Cornell University Department of Biomedical Engineering, , Ithaca, New York 14853"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Cornell University Department of Biomedical Engineering, , Ithaca, New York 14853","institution_ids":["https://openalex.org/I205783295"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Siddhartha Panda","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Siddhartha Panda","raw_affiliation_strings":["IBM Microelectronics , 2070 Route 52, Hopewell Junction, New York 12533"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics , 2070 Route 52, Hopewell Junction, New York 12533","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072919249","display_name":"Nikki L. Edleman","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nikki L. Edleman","raw_affiliation_strings":["IBM Microelectronics , 2070 Route 52, Hopewell Junction, New York 12533"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics , 2070 Route 52, Hopewell Junction, New York 12533","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Scott D. Allen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Scott D. Allen","raw_affiliation_strings":["IBM Microelectronics , 2070 Route 52, Hopewell Junction, New York 12533"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics , 2070 Route 52, Hopewell Junction, New York 12533","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006601362","display_name":"Richard B. Wise","orcid":"https://orcid.org/0000-0001-9797-0828","observed_orcids":["https://orcid.org/0000-0001-9797-0828"]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Richard Wise","raw_affiliation_strings":["IBM Microelectronics , 2070 Route 52, Hopewell Junction, New York 12533"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics , 2070 Route 52, Hopewell Junction, New York 12533","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5076079172","display_name":"Arpan P. Mahorowala","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Arpan Mahorowala","raw_affiliation_strings":["IBM Thomas J Watson Research Center , P.O. Box 218, Yorktown Height, New York 10598"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Thomas J Watson Research Center , P.O. Box 218, Yorktown Height, New York 10598","institution_ids":["https://openalex.org/I4210114115"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":0.6305,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.73108638,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"101","issue":"7","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.43630000948905945,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.43630000948905945,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.41260001063346863,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.05959999933838844,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/borophosphosilicate-glass","display_name":"borophosphosilicate glass","score":0.9359999895095825},{"id":"https://openalex.org/keywords/reactive-ion-etching","display_name":"reactive ion etching","score":0.9440000057220459},{"id":"https://openalex.org/keywords/line-edge-roughness","display_name":"line edge roughness","score":0.9990000128746033},{"id":"https://openalex.org/keywords/line-and-space-patterns","display_name":"line/space patterning","score":0.8159999847412109},{"id":"https://openalex.org/keywords/flow-rate","display_name":"flow rate","score":0.4690000116825104},{"id":"https://openalex.org/keywords/rf-power","display_name":"RF power","score":0.8579999804496765},{"id":"https://openalex.org/keywords/process-window","display_name":"process window","score":0.8640000224113464}],"concepts":[{"id":"https://openalex.org/C71039073","wikidata":"https://www.wikidata.org/wiki/Q3439090","display_name":"Surface finish","level":2,"score":0.598032534122467},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.5614197850227356},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.535503625869751},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.4901755452156067},{"id":"https://openalex.org/C198352243","wikidata":"https://www.wikidata.org/wiki/Q37105","display_name":"Line (geometry)","level":2,"score":0.48429837822914124},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.4751448631286621},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4740726053714752},{"id":"https://openalex.org/C75778745","wikidata":"https://www.wikidata.org/wiki/Q342626","display_name":"Lag","level":2,"score":0.46772515773773193},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.4525047540664673},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.3748389780521393},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3215925097465515},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.3178878426551819},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.25294047594070435},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.23651161789894104},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.22483184933662415},{"id":"https://openalex.org/C107872376","wikidata":"https://www.wikidata.org/wiki/Q321355","display_name":"Environmental chemistry","level":1,"score":0.11063748598098755},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.07693979144096375},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.06857717037200928},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.2717141","doi":"https://doi.org/10.1063/1.2717141","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2717141","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1518204862","https://openalex.org/W1629759244","https://openalex.org/W1680053728","https://openalex.org/W1973061894","https://openalex.org/W1992574978","https://openalex.org/W2002856613","https://openalex.org/W2016399002","https://openalex.org/W2025237377","https://openalex.org/W2032731497","https://openalex.org/W2044635761","https://openalex.org/W2055438194","https://openalex.org/W2071482129","https://openalex.org/W2090485119","https://openalex.org/W2094652511","https://openalex.org/W2129999479","https://openalex.org/W2150109955"],"related_works":["https://openalex.org/W2053026629","https://openalex.org/W2044635761","https://openalex.org/W4242176754","https://openalex.org/W1537501037","https://openalex.org/W2042498298","https://openalex.org/W2792353670","https://openalex.org/W2032731497","https://openalex.org/W2474077497","https://openalex.org/W2931964496","https://openalex.org/W2093807201"],"abstract_inverted_index":{"We":[0],"have":[1],"developed":[2],"a":[3,27],"reactive":[4],"ion":[5],"etch":[6],"(RIE)":[7],"process":[8,46],"in":[9,60],"borophosphosilicate":[10],"glass":[11],"(BPSG)":[12],"for":[13],"150":[14],"nm":[15],"line-and-space":[16],"features,":[17],"where":[18],"line-edge":[19],"roughness":[20],"(LER)":[21],"complemented":[22],"with":[23],"RIE":[24,58],"lag":[25,59],"becomes":[26],"major":[28],"issue.":[29],"Effect":[30],"of":[31,38],"flow":[32],"rates":[33],"and":[34,57],"carbon-to-fluorine":[35],"atomic":[36],"ratio":[37],"fluorohydrocarbon":[39],"gases":[40],"was":[41],"utilized":[42],"to":[43],"achieve":[44],"acceptable":[45,55],"window":[47],"allowing":[48],"lower":[49],"radio":[50],"frequency":[51],"powers":[52],"therefore":[53],"obtaining":[54],"LER":[56],"the":[61],"high-resolution":[62],"features":[63],"etched":[64],"into":[65],"BPSG.":[66]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}