{"id":"https://openalex.org/W1994591939","doi":"https://doi.org/10.1016/0022-0248(91)90723-i","title":"Control of composition and deposition rate in Si-Ge CVD epitaxy on Si","display_name":"Control of composition and deposition rate in Si-Ge CVD epitaxy on Si","publication_year":1991,"publication_date":"1991-12-01","ids":{"openalex":"https://openalex.org/W1994591939","doi":"https://doi.org/10.1016/0022-0248(91)90723-i","mag":"1994591939"},"language":"en","primary_location":{"id":"doi:10.1016/0022-0248(91)90723-i","doi":"https://doi.org/10.1016/0022-0248(91)90723-i","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0022-0248(91)90723-i","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111840974","display_name":"Manabu Kato","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4405285984","display_name":"Research Institute of Electrical Communication, Tohoku University","ror":"https://ror.org/00vbrys56","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I4405285984"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Manabu Kato","raw_affiliation_strings":["Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan","institution_ids":["https://openalex.org/I201537933","https://openalex.org/I4405285984"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010213443","display_name":"Junichi Murota","orcid":"https://orcid.org/0000-0001-9493-1962","observed_orcids":["https://orcid.org/0000-0001-9493-1962"]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4405285984","display_name":"Research Institute of Electrical Communication, Tohoku University","ror":"https://ror.org/00vbrys56","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I4405285984"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Junichi Murota","raw_affiliation_strings":["Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan","institution_ids":["https://openalex.org/I201537933","https://openalex.org/I4405285984"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111664520","display_name":"Shoichi Ono","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4405285984","display_name":"Research Institute of Electrical Communication, Tohoku University","ror":"https://ror.org/00vbrys56","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I4405285984"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shoichi Ono","raw_affiliation_strings":["Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan","institution_ids":["https://openalex.org/I201537933","https://openalex.org/I4405285984"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":1.8542,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.82965899,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"115","issue":"1-4","first_page":"117","last_page":"121"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.5692999958992004,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.5692999958992004,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.40230000019073486,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13889","display_name":"Advanced Materials and Semiconductor Technologies","score":0.012400000356137753,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/low-pressure-cvd","display_name":"low-pressure CVD","score":0.7459999918937683},{"id":"https://openalex.org/keywords/deposition-rate-control","display_name":"deposition rate control","score":0.8349999785423279},{"id":"https://openalex.org/keywords/langmuir-isotherm","display_name":"Langmuir isotherm","score":0.9760000109672546},{"id":"https://openalex.org/keywords/substrate-orientation-dependence","display_name":"substrate orientation dependence","score":0.8230000138282776},{"id":"https://openalex.org/keywords/ge-concentration","display_name":"Ge concentration","score":0.4740000069141388},{"id":"https://openalex.org/keywords/adsorption-rate-constant","display_name":"adsorption rate constant","score":0.7670000195503235},{"id":"https://openalex.org/keywords/partial-pressure-dependence","display_name":"partial pressure dependence","score":0.777999997138977}],"concepts":[{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.7279642820358276},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.7224000096321106},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6644754409790039},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.6329845190048218},{"id":"https://openalex.org/C2776154250","wikidata":"https://www.wikidata.org/wiki/Q415811","display_name":"Germane","level":4,"score":0.5560911893844604},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.51446533203125},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5124066472053528},{"id":"https://openalex.org/C150394285","wikidata":"https://www.wikidata.org/wiki/Q180254","display_name":"Adsorption","level":2,"score":0.48287203907966614},{"id":"https://openalex.org/C2776259327","wikidata":"https://www.wikidata.org/wiki/Q116073","display_name":"Disilane","level":3,"score":0.45165857672691345},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.43006038665771484},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4056103527545929},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.3699752688407898},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.34150832891464233},{"id":"https://openalex.org/C199289684","wikidata":"https://www.wikidata.org/wiki/Q83353","display_name":"Mineralogy","level":1,"score":0.3321878910064697},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.2087581753730774},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0900183916091919},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.056218236684799194},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/0022-0248(91)90723-i","doi":"https://doi.org/10.1016/0022-0248(91)90723-i","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0022-0248(91)90723-i","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2008793619","https://openalex.org/W2043971006","https://openalex.org/W2059813681","https://openalex.org/W2083177328","https://openalex.org/W2087037537"],"related_works":["https://openalex.org/W2066320567","https://openalex.org/W1970136709","https://openalex.org/W2015113212","https://openalex.org/W2050697113","https://openalex.org/W2075583344","https://openalex.org/W1978904334","https://openalex.org/W2064932762","https://openalex.org/W1983202720","https://openalex.org/W2094330227","https://openalex.org/W2028640797"],"abstract_inverted_index":null,"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}