{"id":"https://openalex.org/W1993339999","doi":"https://doi.org/10.1143/apex.3.121001","title":"Low Threshold Current Density InGaN Based 520\u2013530 nm Green Laser Diodes on Semi-Polar {20\\bar21} Free-Standing GaN Substrates","display_name":"Low Threshold Current Density InGaN Based 520\u2013530 nm Green Laser Diodes on Semi-Polar {20\\bar21} Free-Standing GaN Substrates","publication_year":2010,"publication_date":"2010-11-19","ids":{"openalex":"https://openalex.org/W1993339999","doi":"https://doi.org/10.1143/apex.3.121001","mag":"1993339999"},"language":"en","primary_location":{"id":"doi:10.1143/apex.3.121001","doi":"https://doi.org/10.1143/apex.3.121001","is_oa":true,"landing_page_url":"https://doi.org/10.1143/apex.3.121001","pdf_url":"https://iopscience.iop.org/article/10.1143/APEX.3.121001/pdf","source":{"id":"https://openalex.org/S54409865","display_name":"Applied Physics Express","issn_l":"1882-0778","issn":["1882-0778","1882-0786"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","norway-1","oarl","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Express","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/APEX.3.121001/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5061678838","display_name":"Masahiro Adachi","orcid":"https://orcid.org/0000-0002-9369-6435","observed_orcids":["https://orcid.org/0000-0002-9369-6435"]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masahiro Adachi","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036908378","display_name":"Yusuke Yoshizumi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yusuke Yoshizumi","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086201430","display_name":"Yohei Enya","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yohei Enya","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101009156","display_name":"Takashi Kyono","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takashi Kyono","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084518835","display_name":"Takamichi Sumitomo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takamichi Sumitomo","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Shinji Tokuyama","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinji Tokuyama","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061392564","display_name":"Shinpei Takagi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinpei Takagi","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077678833","display_name":"Kazuhide Sumiyoshi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuhide Sumiyoshi","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028119622","display_name":"Nobuhiro Saga","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Nobuhiro Saga","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056888130","display_name":"Takatoshi Ikegami","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takatoshi Ikegami","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Masaki Ueno","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masaki Ueno","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110222716","display_name":"Koji Katayama","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koji Katayama","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"last","author":{"id":null,"display_name":"Takao Nakamura","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takao Nakamura","raw_affiliation_strings":["Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan","institution_ids":["https://openalex.org/I4210166210"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210166210"],"apc_list":{"value":2365,"currency":"USD","value_usd":2365},"apc_paid":null,"fwci":7.3142,"has_fulltext":true,"cited_by_count":91,"citation_normalized_percentile":{"value":0.97877997,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"3","issue":"12","first_page":"121001","last_page":"121001"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/green-laser-diodes","display_name":"green laser diodes","score":0.8970000147819519},{"id":"https://openalex.org/keywords/ingan","display_name":"InGaN","score":0.9509999752044678},{"id":"https://openalex.org/keywords/semipolar-gan","display_name":"semipolar GaN","score":0.9200000166893005},{"id":"https://openalex.org/keywords/threshold-current-density","display_name":"threshold current density","score":0.8930000066757202},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.7369999885559082},{"id":"https://openalex.org/keywords/beam-divergence","display_name":"beam divergence","score":0.9380000233650208},{"id":"https://openalex.org/keywords/room-temperature-continuous-wave-operation","display_name":"room-temperature continuous-wave operation","score":0.597000002861023}],"concepts":[{"id":"https://openalex.org/C2992667644","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Green laser","level":3,"score":0.7481527328491211},{"id":"https://openalex.org/C40637687","wikidata":"https://www.wikidata.org/wiki/Q676237","display_name":"Lasing threshold","level":3,"score":0.7377979159355164},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7040281891822815},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5994102358818054},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.5971275568008423},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.591895580291748},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5371509194374084},{"id":"https://openalex.org/C2775987729","wikidata":"https://www.wikidata.org/wiki/Q2336758","display_name":"Green-light","level":3,"score":0.5317287445068359},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.4982633590698242},{"id":"https://openalex.org/C199631012","wikidata":"https://www.wikidata.org/wiki/Q205034","display_name":"Perpendicular","level":2,"score":0.4897334575653076},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.43886762857437134},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4327341914176941},{"id":"https://openalex.org/C17825722","wikidata":"https://www.wikidata.org/wiki/Q17285","display_name":"Plane (geometry)","level":2,"score":0.4104391634464264},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3701362609863281},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13450509309768677},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10446429252624512},{"id":"https://openalex.org/C3017965124","wikidata":"https://www.wikidata.org/wiki/Q4929359","display_name":"Blue light","level":2,"score":0.0577007532119751},{"id":"https://openalex.org/C6260449","wikidata":"https://www.wikidata.org/wiki/Q41364","display_name":"Wavelength","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/apex.3.121001","doi":"https://doi.org/10.1143/apex.3.121001","is_oa":true,"landing_page_url":"https://doi.org/10.1143/apex.3.121001","pdf_url":"https://iopscience.iop.org/article/10.1143/APEX.3.121001/pdf","source":{"id":"https://openalex.org/S54409865","display_name":"Applied Physics Express","issn_l":"1882-0778","issn":["1882-0778","1882-0786"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","norway-1","oarl","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1143/apex.3.121001","doi":"https://doi.org/10.1143/apex.3.121001","is_oa":true,"landing_page_url":"https://doi.org/10.1143/apex.3.121001","pdf_url":"https://iopscience.iop.org/article/10.1143/APEX.3.121001/pdf","source":{"id":"https://openalex.org/S54409865","display_name":"Applied Physics Express","issn_l":"1882-0778","issn":["1882-0778","1882-0786"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","norway-1","oarl","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Express","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1993339999.pdf","grobid_xml":"https://content.openalex.org/works/W1993339999.grobid-xml"},"referenced_works_count":22,"referenced_works":["https://openalex.org/W1974255727","https://openalex.org/W1986507621","https://openalex.org/W1990671573","https://openalex.org/W2002285979","https://openalex.org/W2018063973","https://openalex.org/W2018632897","https://openalex.org/W2022800577","https://openalex.org/W2028925919","https://openalex.org/W2030498102","https://openalex.org/W2032674194","https://openalex.org/W2033193623","https://openalex.org/W2047674924","https://openalex.org/W2052564236","https://openalex.org/W2061555142","https://openalex.org/W2067314870","https://openalex.org/W2070176010","https://openalex.org/W2072407117","https://openalex.org/W2081984556","https://openalex.org/W2083136845","https://openalex.org/W2084220832","https://openalex.org/W2095255744","https://openalex.org/W2098720070"],"related_works":["https://openalex.org/W2022800577","https://openalex.org/W2052309388","https://openalex.org/W1511852320","https://openalex.org/W2569794281","https://openalex.org/W2067314870","https://openalex.org/W2027624351","https://openalex.org/W2011907491","https://openalex.org/W2513943968","https://openalex.org/W2569015090","https://openalex.org/W2044244699"],"abstract_inverted_index":{"Green":[0],"laser":[1],"diodes":[2],"(LDs)":[3],"on":[4,17,120],"the":[5,18,22,93,103,106,110,117,121,127],"{2021}":[6,34,94,122],"plane":[7,123],"exhibit":[8],"lower":[9],"threshold":[10,29,53,62,111],"current":[11,30,54,112],"densities,":[12],"nearly":[13],"half":[14,90],"of":[15,31,56,92,105],"those":[16],"c":[19],"-plane":[20],"in":[21],"green":[23,35,95,118,133],"region":[24],"between":[25],"520\u2013530":[26],"nm.":[27],"The":[28,61,67,78],"a":[32,52],"typical":[33],"LD":[36],"lasing":[37],"at":[38,89],"525.5":[39],"nm":[40],"under":[41],"room":[42],"temperature":[43,69],"cw":[44],"operation":[45],"is":[46,64,72],"51.1":[47],"mA,":[48],"which":[49],"corresponds":[50],"to":[51,74],"density":[55],"4.3":[57],"kA/cm":[58],"2":[59],".":[60],"voltage":[63],"6.38":[65],"V.":[66],"characteristics":[68],"T":[70],"0":[71],"measured":[73],"be":[75],"175":[76],"K.":[77],"perpendicular":[79],"\u03b8":[80,84],"\u22a5":[81],"and":[82,99],"parallel":[83],"||":[85],"beam":[86],"divergence":[87],"angles":[88],"power":[91],"LDs":[96,119],"are":[97],"24":[98],"11\u00b0,":[100],"respectively.":[101],"From":[102],"viewpoint":[104],"device":[107],"characteristics,":[108],"especially":[109],"density,":[113],"we":[114],"conclude":[115],"that":[116],"GaN":[124],"substrates":[125],"have":[126],"essential":[128],"advantage":[129],"for":[130],"obtaining":[131],"efficient":[132],"LDs.":[134]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":9},{"year":2015,"cited_by_count":12},{"year":2014,"cited_by_count":6},{"year":2013,"cited_by_count":14},{"year":2012,"cited_by_count":12}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}