{"id":"https://openalex.org/W1992872050","doi":"https://doi.org/10.1063/1.101792","title":"Aluminum selective area deposition on Si using diethylaluminumchloride","display_name":"Aluminum selective area deposition on Si using diethylaluminumchloride","publication_year":1989,"publication_date":"1989-08-21","ids":{"openalex":"https://openalex.org/W1992872050","doi":"https://doi.org/10.1063/1.101792","mag":"1992872050"},"language":"en","primary_location":{"id":"doi:10.1063/1.101792","doi":"https://doi.org/10.1063/1.101792","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.101792","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083438887","display_name":"Chiaki Sasaoka","orcid":"https://orcid.org/0000-0002-0774-8666","observed_orcids":["https://orcid.org/0000-0002-0774-8666"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"C. Sasaoka","raw_affiliation_strings":["Fundamental Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":null,"display_name":"K. Mori","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Mori","raw_affiliation_strings":["Fundamental Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110131831","display_name":"Yoshitake Kato","orcid":"https://orcid.org/0000-0001-9974-6942","observed_orcids":["https://orcid.org/0000-0001-9974-6942"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Kato","raw_affiliation_strings":["Fundamental Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"last","author":{"id":null,"display_name":"A. Usui","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"A. Usui","raw_affiliation_strings":["Fundamental Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213, Japan","institution_ids":["https://openalex.org/I118347220"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I118347220"],"apc_list":null,"apc_paid":null,"fwci":3.2284,"has_fulltext":false,"cited_by_count":32,"citation_normalized_percentile":{"value":0.90780466,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"55","issue":"8","first_page":"741","last_page":"743"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.7153000235557556,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.7153000235557556,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.17090000212192535,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.10000000149011612,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/area-selective-deposition","display_name":"area-selective deposition","score":0.8489999771118164},{"id":"https://openalex.org/keywords/aluminum-thin-films","display_name":"aluminum thin films","score":0.8190000057220459},{"id":"https://openalex.org/keywords/diethylaluminum-chloride","display_name":"diethylaluminum chloride","score":0.8659999966621399},{"id":"https://openalex.org/keywords/chemical-vapor-deposition","display_name":"chemical vapor deposition","score":0.7559999823570251},{"id":"https://openalex.org/keywords/silicon-substrate","display_name":"silicon substrate","score":0.7200000286102295},{"id":"https://openalex.org/keywords/catalytic-decomposition","display_name":"catalytic decomposition","score":0.777999997138977},{"id":"https://openalex.org/keywords/deposition-rate","display_name":"deposition rate","score":0.7390000224113464},{"id":"https://openalex.org/keywords/film-resistivity","display_name":"film resistivity","score":0.7540000081062317}],"concepts":[{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.8317375183105469},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.7020174264907837},{"id":"https://openalex.org/C513153333","wikidata":"https://www.wikidata.org/wiki/Q663","display_name":"Aluminium","level":2,"score":0.6587642431259155},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6102969646453857},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.5876861810684204},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.583381175994873},{"id":"https://openalex.org/C124681953","wikidata":"https://www.wikidata.org/wiki/Q339062","display_name":"Decomposition","level":2,"score":0.5704463124275208},{"id":"https://openalex.org/C7770020","wikidata":"https://www.wikidata.org/wiki/Q460616","display_name":"Electron beam physical vapor deposition","level":3,"score":0.4753803312778473},{"id":"https://openalex.org/C118442862","wikidata":"https://www.wikidata.org/wiki/Q899143","display_name":"Ion plating","level":3,"score":0.47045767307281494},{"id":"https://openalex.org/C118792377","wikidata":"https://www.wikidata.org/wiki/Q108584245","display_name":"Selectivity","level":3,"score":0.4665273129940033},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4581567049026489},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.43722009658813477},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.4280802309513092},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4168471693992615},{"id":"https://openalex.org/C199289684","wikidata":"https://www.wikidata.org/wiki/Q83353","display_name":"Mineralogy","level":1,"score":0.3375406265258789},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.3100903630256653},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.302631139755249},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.21068602800369263},{"id":"https://openalex.org/C107872376","wikidata":"https://www.wikidata.org/wiki/Q321355","display_name":"Environmental chemistry","level":1,"score":0.15206974744796753},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.08033087849617004},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.08013635873794556},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.055585771799087524},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.101792","doi":"https://doi.org/10.1063/1.101792","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.101792","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1997181306","https://openalex.org/W2021333610","https://openalex.org/W2055216892","https://openalex.org/W2060099176","https://openalex.org/W2083449093","https://openalex.org/W2111009606"],"related_works":["https://openalex.org/W3161570771","https://openalex.org/W2029001972","https://openalex.org/W2118904793","https://openalex.org/W2044032463","https://openalex.org/W2054874813","https://openalex.org/W2053337618","https://openalex.org/W2030485203","https://openalex.org/W2024044491","https://openalex.org/W2021333610","https://openalex.org/W2026458585"],"abstract_inverted_index":{"Aluminum":[0],"deposition":[1,15,19,30],"on":[2,59],"Si":[3],"was":[4,20,32],"studied":[5],"using":[6],"diethylaluminumchloride":[7],"(DEAlCl)":[8],"as":[9],"a":[10],"new":[11],"Al":[12,61],"chemical":[13],"vapor":[14],"source.":[16],"Selective":[17],"area":[18],"successfully":[21],"achieved":[22],"at":[23],"substrate":[24],"temperatures":[25],"of":[26,40,48],"313\u2013380":[27],"\u00b0C.":[28],"The":[29],"rate":[31],"higher":[33],"than":[34],"370":[35],"\u00c5/min.":[36],"Reflectance":[37],"and":[38],"resistivity":[39],"the":[41,49,60,66],"deposited":[42],"films":[43],"were":[44],"comparable":[45],"to":[46],"those":[47],"evaporated":[50],"ones.":[51],"Decomposition":[52],"experiments":[53],"suggest":[54],"that":[55],"DEAlCl":[56],"catalytically":[57],"decomposes":[58],"surface,":[62],"which":[63],"would":[64],"explain":[65],"high":[67],"selectivity":[68],"observed.":[69]},"counts_by_year":[{"year":2013,"cited_by_count":1}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}