{"id":"https://openalex.org/W1992713239","doi":"https://doi.org/10.1117/12.686732","title":"Chemical flare long-range proximity effects in photomask manufacturing with chemically amplified resists","display_name":"Chemical flare long-range proximity effects in photomask manufacturing with chemically amplified resists","publication_year":2006,"publication_date":"2006-10-06","ids":{"openalex":"https://openalex.org/W1992713239","doi":"https://doi.org/10.1117/12.686732","mag":"1992713239"},"language":"en","primary_location":{"id":"doi:10.1117/12.686732","doi":"https://doi.org/10.1117/12.686732","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.686732","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Daniel Sullivan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Daniel Sullivan","raw_affiliation_strings":["IBM, United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, United States","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Yusuke Okawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210145730","display_name":"Toppan (United States)","ror":"https://ror.org/044xdg011","country_code":"US","type":"company","lineage":["https://openalex.org/I4210110394","https://openalex.org/I4210145730"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yusuke Okawa","raw_affiliation_strings":["Toppan Electronics, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toppan Electronics, Inc. (United States)","institution_ids":["https://openalex.org/I4210145730"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Kazuhiko Sugawara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210145730","display_name":"Toppan (United States)","ror":"https://ror.org/044xdg011","country_code":"US","type":"company","lineage":["https://openalex.org/I4210110394","https://openalex.org/I4210145730"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kazuhiko Sugawara","raw_affiliation_strings":["Toppan Electronics, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toppan Electronics, Inc. (United States)","institution_ids":["https://openalex.org/I4210145730"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018304174","display_name":"Zdenek Benes","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zdenek Benes","raw_affiliation_strings":["IBM, United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, United States","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5004027905","display_name":"Jun Kotani","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210145730","display_name":"Toppan (United States)","ror":"https://ror.org/044xdg011","country_code":"US","type":"company","lineage":["https://openalex.org/I4210110394","https://openalex.org/I4210145730"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jun Kotani","raw_affiliation_strings":["Toppan Electronics, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toppan Electronics, Inc. (United States)","institution_ids":["https://openalex.org/I4210145730"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.09170062,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"6349","issue":null,"first_page":"634905","last_page":"634905"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12224","display_name":"Nanofabrication and Lithography Techniques","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11517","display_name":"Advanced optical system design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/long-range-proximity-effect","display_name":"long-range proximity effect","score":0.9760000109672546},{"id":"https://openalex.org/keywords/photomask-fabrication","display_name":"photomask fabrication","score":0.8820000290870667},{"id":"https://openalex.org/keywords/chemically-amplified-resists","display_name":"chemically amplified resists","score":0.9879999756813049},{"id":"https://openalex.org/keywords/critical-dimension-uniformity","display_name":"critical dimension uniformity","score":0.8519999980926514},{"id":"https://openalex.org/keywords/electron-beam-lithography","display_name":"electron beam lithography","score":0.7870000004768372},{"id":"https://openalex.org/keywords/antireflection-coatings","display_name":"antireflection coatings","score":0.7860000133514404}],"concepts":[{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.9420818090438843},{"id":"https://openalex.org/C14737013","wikidata":"https://www.wikidata.org/wiki/Q1319657","display_name":"Photomask","level":4,"score":0.8888005018234253},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.7589401006698608},{"id":"https://openalex.org/C207789793","wikidata":"https://www.wikidata.org/wiki/Q3028070","display_name":"Critical dimension","level":2,"score":0.664529025554657},{"id":"https://openalex.org/C2779588948","wikidata":"https://www.wikidata.org/wiki/Q628261","display_name":"Flare","level":2,"score":0.5829780101776123},{"id":"https://openalex.org/C105487726","wikidata":"https://www.wikidata.org/wiki/Q622938","display_name":"Photolithography","level":2,"score":0.5729237198829651},{"id":"https://openalex.org/C162996421","wikidata":"https://www.wikidata.org/wiki/Q371965","display_name":"Extreme ultraviolet lithography","level":2,"score":0.5646536946296692},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5621788501739502},{"id":"https://openalex.org/C124223222","wikidata":"https://www.wikidata.org/wiki/Q2281940","display_name":"Chemical process","level":2,"score":0.5169050693511963},{"id":"https://openalex.org/C56200935","wikidata":"https://www.wikidata.org/wiki/Q250840","display_name":"Nozzle","level":2,"score":0.43293485045433044},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4262394905090332},{"id":"https://openalex.org/C184133267","wikidata":"https://www.wikidata.org/wiki/Q5090480","display_name":"Chemical modification","level":2,"score":0.41164109110832214},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.30258646607398987},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.2774888873100281},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.15304720401763916},{"id":"https://openalex.org/C146978453","wikidata":"https://www.wikidata.org/wiki/Q3798668","display_name":"Aerospace engineering","level":1,"score":0.15004962682724},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11719626188278198},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11378493905067444},{"id":"https://openalex.org/C188027245","wikidata":"https://www.wikidata.org/wiki/Q750446","display_name":"Polymer chemistry","level":1,"score":0.10574027895927429},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.686732","doi":"https://doi.org/10.1117/12.686732","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.686732","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2038911983","https://openalex.org/W2091387673","https://openalex.org/W2036843270","https://openalex.org/W3210314467","https://openalex.org/W1998709091","https://openalex.org/W2093579163","https://openalex.org/W2090862696","https://openalex.org/W2070311138","https://openalex.org/W2012378084","https://openalex.org/W4250309625"],"abstract_inverted_index":{"As":[0],"critical":[1,22],"dimension":[2,23],"uniformity":[3],"requirements":[4],"tighten":[5],"for":[6,18,125],"advanced":[7],"technology":[8],"nodes,":[9],"it":[10],"becomes":[11],"increasingly":[12],"important":[13],"to":[14,40,48,51,64,81],"characterize":[15],"and":[16,55,71,92,95,114,123],"correct":[17],"systematic":[19],"sources":[20],"of":[21,104],"error":[24],"in":[25,37,42,109],"mask":[26],"manufacturing.":[27],"A":[28],"long":[29],"range":[30],"proximity":[31],"effect":[32,67],"has":[33,78],"been":[34,69,79,100,121],"previously":[35],"reported":[36],"the":[38,52],"industry":[39],"occur":[41],"chemically":[43,116],"amplified":[44,117],"resists":[45,119],"that":[46],"appears":[47],"be":[49],"related":[50],"develop":[53,75,89,91],"process":[54],"we":[56],"call":[57],"this":[58,66,126],"phenomenon":[59],"chemical":[60,83,106],"flare.":[61],"Several":[62],"attempts":[63],"modulate":[65],"have":[68,99,120],"characterized":[70,124],"at":[72],"least":[73],"one":[74],"nozzle":[76],"modification":[77],"found":[80],"reduce":[82],"flare":[84,107],"by":[85],"~50%.":[86],"In":[87],"addition,":[88],"time,":[90],"rinse":[93],"processes,":[94],"top":[96],"anti-reflective":[97],"coatings":[98],"evaluated":[101,122],"as":[102],"methods":[103],"minimizing":[105],"effects":[108],"e-beam":[110],"lithography":[111],"applications.":[112],"Positive":[113],"negative":[115],"ebeam":[118],"effect.":[127]},"counts_by_year":[],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}