{"id":"https://openalex.org/W1991706485","doi":"https://doi.org/10.1088/0022-3719/17/2/014","title":"Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs","display_name":"Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs","publication_year":1984,"publication_date":"1984-01-20","ids":{"openalex":"https://openalex.org/W1991706485","doi":"https://doi.org/10.1088/0022-3719/17/2/014","mag":"1991706485"},"language":"en","primary_location":{"id":"doi:10.1088/0022-3719/17/2/014","doi":"https://doi.org/10.1088/0022-3719/17/2/014","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0022-3719/17/2/014","pdf_url":"https://iopscience.iop.org/article/10.1088/0022-3719/17/2/014/pdf","source":{"id":"https://openalex.org/S164261264","display_name":"Journal of Physics C Solid State Physics","issn_l":"0022-3719","issn":["0022-3719","1747-3802"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics C: Solid State Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1088/0022-3719/17/2/014/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5056864229","display_name":"Zhanguo Wang","orcid":"https://orcid.org/0000-0001-6395-2517","observed_orcids":["https://orcid.org/0000-0001-6395-2517"]},"institutions":[{"id":"https://openalex.org/I187531555","display_name":"Lund University","ror":"https://ror.org/012a77v79","country_code":"SE","type":"education","lineage":["https://openalex.org/I187531555"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"Zhan-Guo Wang","raw_affiliation_strings":["Dept. of Solid State Phys., Univ. of Lund, Lund, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Solid State Phys., Univ. of Lund, Lund, Sweden","institution_ids":["https://openalex.org/I187531555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111533314","display_name":"L -A Ledebo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I187531555","display_name":"Lund University","ror":"https://ror.org/012a77v79","country_code":"SE","type":"education","lineage":["https://openalex.org/I187531555"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"L -A Ledebo","raw_affiliation_strings":["Dept. of Solid State Phys., Univ. of Lund, Lund, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Solid State Phys., Univ. of Lund, Lund, Sweden","institution_ids":["https://openalex.org/I187531555"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113924409","display_name":"Hermann G. Grimmeiss","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I187531555","display_name":"Lund University","ror":"https://ror.org/012a77v79","country_code":"SE","type":"education","lineage":["https://openalex.org/I187531555"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"H G Grimmeiss","raw_affiliation_strings":["Dept. of Solid State Phys., Univ. of Lund, Lund, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Solid State Phys., Univ. of Lund, Lund, Sweden","institution_ids":["https://openalex.org/I187531555"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I187531555"],"apc_list":null,"apc_paid":null,"fwci":3.0591,"has_fulltext":true,"cited_by_count":47,"citation_normalized_percentile":{"value":0.9167176,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"17","issue":"2","first_page":"259","last_page":"272"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9872999787330627,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9872999787330627,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.0038999998942017555,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.003700000001117587,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/deep-level-defects","display_name":"deep levels","score":0.9629999995231628},{"id":"https://openalex.org/keywords/a-level","display_name":"A level","score":0.5910000205039978},{"id":"https://openalex.org/keywords/activation-energy","display_name":"activation energy","score":0.7269999980926514},{"id":"https://openalex.org/keywords/optical-cross-section","display_name":"optical cross section","score":0.8100000023841858},{"id":"https://openalex.org/keywords/photocapacitance","display_name":"photocapacitance","score":0.890999972820282},{"id":"https://openalex.org/keywords/electronic-structure-of-defects","display_name":"defect electronic structure","score":0.367000013589859}],"concepts":[{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.7082828879356384},{"id":"https://openalex.org/C83581075","wikidata":"https://www.wikidata.org/wiki/Q1361503","display_name":"Excitation","level":2,"score":0.6414107084274292},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5486541390419006},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.5157566070556641},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.49472424387931824},{"id":"https://openalex.org/C86025842","wikidata":"https://www.wikidata.org/wiki/Q5358432","display_name":"Electronic structure","level":2,"score":0.4227990210056305},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.41671645641326904},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.41438013315200806},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.3527761995792389},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.30441898107528687},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.26761770248413086},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.26714780926704407},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18291446566581726},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.0752173662185669},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.061736881732940674},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.05638948082923889},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1088/0022-3719/17/2/014","doi":"https://doi.org/10.1088/0022-3719/17/2/014","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0022-3719/17/2/014","pdf_url":"https://iopscience.iop.org/article/10.1088/0022-3719/17/2/014/pdf","source":{"id":"https://openalex.org/S164261264","display_name":"Journal of Physics C Solid State Physics","issn_l":"0022-3719","issn":["0022-3719","1747-3802"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics C: Solid State Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1088/0022-3719/17/2/014","doi":"https://doi.org/10.1088/0022-3719/17/2/014","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0022-3719/17/2/014","pdf_url":"https://iopscience.iop.org/article/10.1088/0022-3719/17/2/014/pdf","source":{"id":"https://openalex.org/S164261264","display_name":"Journal of Physics C Solid State Physics","issn_l":"0022-3719","issn":["0022-3719","1747-3802"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics C: Solid State Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1991706485.pdf","grobid_xml":"https://content.openalex.org/works/W1991706485.grobid-xml"},"referenced_works_count":34,"referenced_works":["https://openalex.org/W192016692","https://openalex.org/W1973441566","https://openalex.org/W1975934658","https://openalex.org/W1976050197","https://openalex.org/W1977309214","https://openalex.org/W1981939711","https://openalex.org/W1993454674","https://openalex.org/W2001896619","https://openalex.org/W2002658560","https://openalex.org/W2003797361","https://openalex.org/W2004904917","https://openalex.org/W2008241143","https://openalex.org/W2011901325","https://openalex.org/W2014414413","https://openalex.org/W2016922596","https://openalex.org/W2017716732","https://openalex.org/W2027018658","https://openalex.org/W2035636866","https://openalex.org/W2038317122","https://openalex.org/W2050780559","https://openalex.org/W2054670966","https://openalex.org/W2057389639","https://openalex.org/W2060041892","https://openalex.org/W2069213501","https://openalex.org/W2072543795","https://openalex.org/W2082120579","https://openalex.org/W2084950095","https://openalex.org/W2092665187","https://openalex.org/W2093037381","https://openalex.org/W2093970301","https://openalex.org/W2147779034","https://openalex.org/W2152065859","https://openalex.org/W2169696767","https://openalex.org/W2567150887"],"related_works":["https://openalex.org/W1963604712","https://openalex.org/W2025316682","https://openalex.org/W2050027565","https://openalex.org/W2025541747","https://openalex.org/W1653572074","https://openalex.org/W2022436975","https://openalex.org/W2055257247","https://openalex.org/W2003179887","https://openalex.org/W2062461672","https://openalex.org/W2047932138"],"abstract_inverted_index":{"GaAs":[0],"grown":[1],"under":[2,129],"Ga-rich":[3],"conditions":[4,128],"often":[5],"contains":[6],"two":[7,110],"dominant":[8],"deep":[9],"levels,":[10,97],"sometimes":[11],"referred":[12],"to":[13,56,106,117,136],"as":[14],"the":[15,24,70,93,109,127,131,137,140,144],"A":[16,62,94,101],"and":[17,32,54,63,89,95,114],"B":[18,68,96],"levels.":[19],"The":[20,35,82,121],"authors":[21],"have":[22,79],"investigated":[23],"electronic":[25,122],"properties":[26],"of":[27,48,50],"these":[28],"levels":[29,111],"in":[30,124],"n-type":[31],"p-type":[33],"material.":[34],"apparent":[36],"activation":[37],"energies":[38],"for":[39,60,66,84,92],"thermal":[40,51],"hole":[41],"emission":[42,52],"were":[43],"measured":[44],"over":[45],"eight":[46],"orders":[47],"magnitude":[49],"rate,":[53],"found":[55],"be":[57,143],"0.40":[58],"eV":[59,65,91],"level":[61,67],"0.70":[64],"after":[69],"T":[71],"2":[72],"correction.":[73],"All":[74],"four":[75],"optical":[76],"cross":[77],"sections":[78],"been":[80],"determined.":[81],"thresholds":[83],"electron":[85],"excitation":[86],"are":[87,112],"1.15":[88],"0.90":[90],"respectively,":[98],"at":[99],"80K.":[100],"photocapacitance":[102],"method":[103],"is":[104,133],"used":[105],"demonstrate":[107],"that":[108,139],"coupled":[113],"thus":[115],"due":[116],"one":[118],"single":[119],"defect.":[120],"properties,":[123],"combination":[125],"with":[126],"which":[130],"defect":[132,141],"formed,":[134],"lead":[135],"suggestion":[138],"may":[142],"Ga":[145],"As":[146],"antisite.":[147]},"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}