{"id":"https://openalex.org/W1991543337","doi":"https://doi.org/10.1063/1.125840","title":"Analysis of submicron carbon nanotube field-effect transistors","display_name":"Analysis of submicron carbon nanotube field-effect transistors","publication_year":2000,"publication_date":"2000-01-31","ids":{"openalex":"https://openalex.org/W1991543337","doi":"https://doi.org/10.1063/1.125840","mag":"1991543337"},"language":"en","primary_location":{"id":"doi:10.1063/1.125840","doi":"https://doi.org/10.1063/1.125840","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.125840","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002321082","display_name":"Toshishige Yamada","orcid":"https://orcid.org/0000-0001-7145-9212","observed_orcids":["https://orcid.org/0000-0001-7145-9212"]},"institutions":[{"id":"https://openalex.org/I1280536761","display_name":"Ames Research Center","ror":"https://ror.org/02acart68","country_code":"US","type":"facility","lineage":["https://openalex.org/I1280536761","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Toshishige Yamada","raw_affiliation_strings":["MRJ, T27A-1, NASA Ames Research Center, Moffett Field, California 94035-1000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MRJ, T27A-1, NASA Ames Research Center, Moffett Field, California 94035-1000","institution_ids":["https://openalex.org/I1280536761"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5002321082"],"corresponding_institution_ids":["https://openalex.org/I1280536761"],"apc_list":null,"apc_paid":null,"fwci":1.5913,"has_fulltext":false,"cited_by_count":32,"citation_normalized_percentile":{"value":0.80902798,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"76","issue":"5","first_page":"628","last_page":"630"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.4066999852657318,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.4066999852657318,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.28780001401901245,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.2281000018119812,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistors","display_name":"carbon nanotube field-effect transistors","score":0.9919999837875366},{"id":"https://openalex.org/keywords/metal-semiconductor-junction","display_name":"metal-semiconductor contacts","score":0.8820000290870667},{"id":"https://openalex.org/keywords/weak-localization","display_name":"weak localization","score":0.7229999899864197},{"id":"https://openalex.org/keywords/carrier-carrier-scattering","display_name":"carrier-carrier scattering","score":0.6610000133514404},{"id":"https://openalex.org/keywords/pinch-off","display_name":"pinch-off","score":0.8500000238418579},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.7419999837875366},{"id":"https://openalex.org/keywords/saturation-drain-current","display_name":"saturation drain current","score":0.7540000081062317},{"id":"https://openalex.org/keywords/density-of-states","display_name":"density of states","score":0.6200000047683716}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.831342339515686},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.75551438331604},{"id":"https://openalex.org/C2777619693","wikidata":"https://www.wikidata.org/wiki/Q539430","display_name":"Nanotube","level":3,"score":0.6747379899024963},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.6298282146453857},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6217131614685059},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.615632951259613},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5513184666633606},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.533912718296051},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.5041860342025757},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4800737500190735},{"id":"https://openalex.org/C154267886","wikidata":"https://www.wikidata.org/wiki/Q5037978","display_name":"Carbon nanotube quantum dot","level":4,"score":0.47972384095191956},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4375998079776764},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.38598203659057617},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.29770636558532715},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23178809881210327},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12984901666641235},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.125840","doi":"https://doi.org/10.1063/1.125840","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.125840","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1545541147","https://openalex.org/W1646294624","https://openalex.org/W1977963257","https://openalex.org/W2024360896","https://openalex.org/W2041986849","https://openalex.org/W2043736652","https://openalex.org/W2044116101","https://openalex.org/W2050296939","https://openalex.org/W2058585669","https://openalex.org/W2136595562","https://openalex.org/W2147577254","https://openalex.org/W2152199549"],"related_works":["https://openalex.org/W2022410685","https://openalex.org/W2075488668","https://openalex.org/W2049446640","https://openalex.org/W2147413270","https://openalex.org/W2016959088","https://openalex.org/W1972992477","https://openalex.org/W2051019899","https://openalex.org/W2019545516","https://openalex.org/W2120621778","https://openalex.org/W1547936566"],"abstract_inverted_index":{"A":[0],"theoretical":[1],"analysis":[2],"of":[3,50,93],"carbon":[4],"nanotube":[5,75,109],"based":[6],"field-effect":[7],"transistors":[8,110],"fabricated":[9],"by":[10],"two":[11],"different":[12],"groups":[13],"[Tans":[14],"et":[15,23],"al.,":[16,24],"Nature":[17],"(London)":[18],"393,":[19],"49":[20],"(1998);":[21],"Martel":[22],"Appl.":[25],"Phys.":[26],"Lett.":[27],"73,":[28],"2447":[29],"(1998)]":[30],"is":[31],"presented.":[32],"The":[33],"metal":[34],"(electrode)-semiconductor":[35],"(nanotube)":[36],"contact":[37],"influences":[38],"subthreshold":[39],"channel":[40],"conductance":[41],"versus":[42,80],"gate":[43],"voltage":[44,82],"VG,":[45],"such":[46],"that":[47,97],"the":[48,55,63,74,87,91],"occurrence":[49],"a":[51],"kink":[52],"depends":[53],"on":[54],"transport":[56,85],"mechanism":[57],"across":[58],"this":[59],"contact.":[60],"Saturation":[61],"in":[62,71,86,90,106],"turn-on":[64],"drain":[65,81],"current":[66],"ID":[67,79],"vs":[68],"VG":[69],"seen":[70],"experiments":[72],"reflects":[73],"state":[76],"density.":[77],"Saturationless":[78],"VD":[83],"indicates":[84],"weak-localization":[88],"regime":[89],"absence":[92],"carrier\u2013carrier":[94],"scattering":[95],"so":[96],"pinch-off":[98],"cannot":[99],"occur.":[100],"To":[101],"compensate":[102],"for":[103],"saturationless":[104],"ID(VD)":[105],"digital":[107],"applications,":[108],"need":[111],"to":[112,115],"be":[113],"designed":[114],"maximize":[116],"their":[117],"transconductance.":[118]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}