{"id":"https://openalex.org/W1990616401","doi":"https://doi.org/10.1063/1.1579114","title":"Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO","display_name":"Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO","publication_year":2003,"publication_date":"2003-06-30","ids":{"openalex":"https://openalex.org/W1990616401","doi":"https://doi.org/10.1063/1.1579114","mag":"1990616401"},"language":"en","primary_location":{"id":"doi:10.1063/1.1579114","doi":"https://doi.org/10.1063/1.1579114","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1579114","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016479284","display_name":"Alexander Y. Polyakov","orcid":"https://orcid.org/0000-0001-6898-6126","observed_orcids":["https://orcid.org/0000-0001-6898-6126"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. Y. Polyakov","raw_affiliation_strings":["Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky per., 5, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky per., 5, Russia","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016164016","display_name":"N. B. Smirnov","orcid":"https://orcid.org/0000-0002-4993-0175","observed_orcids":["https://orcid.org/0000-0002-4993-0175"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"N. B. Smirnov","raw_affiliation_strings":["Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky per., 5, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky per., 5, Russia","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015342153","display_name":"Anatoliy V. Govorkov","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. V. Govorkov","raw_affiliation_strings":["Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky per., 5, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky per., 5, Russia","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008739929","display_name":"Kelly P. Ip","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Ip","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109992366","display_name":"Mark E. Overberg","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. E. Overberg","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023670333","display_name":"Young-Woo Heo","orcid":"https://orcid.org/0000-0002-3196-4174","observed_orcids":["https://orcid.org/0000-0002-3196-4174"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Y. W. Heo","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113504904","display_name":"D. P. Norton","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. P. Norton","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085381025","display_name":"S. J. Pearton","orcid":"https://orcid.org/0000-0001-6498-1256","observed_orcids":["https://orcid.org/0000-0001-6498-1256"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. J. Pearton","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078326554","display_name":"B. Luo","orcid":"https://orcid.org/0009-0004-7773-4966","observed_orcids":["https://orcid.org/0009-0004-7773-4966"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B. Luo","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100641969","display_name":"Fan Ren","orcid":"https://orcid.org/0000-0001-9234-019X","observed_orcids":["https://orcid.org/0000-0001-9234-019X"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"F. Ren","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5091790620","display_name":"John M. Zavada","orcid":"https://orcid.org/0000-0001-6219-6748","observed_orcids":["https://orcid.org/0000-0001-6219-6748"]},"institutions":[{"id":"https://openalex.org/I4210163870","display_name":"United States Army Research Office","ror":"https://ror.org/05epdh915","country_code":"US","type":"government","lineage":["https://openalex.org/I1304082316","https://openalex.org/I1330347796","https://openalex.org/I166416128","https://openalex.org/I2802705668","https://openalex.org/I4210154437","https://openalex.org/I4210163870"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. M. Zavada","raw_affiliation_strings":["U.S. Army Research Office, Research Triangle Park, North Carolina 27709"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"U.S. Army Research Office, Research Triangle Park, North Carolina 27709","institution_ids":["https://openalex.org/I4210163870"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":3.1001,"has_fulltext":false,"cited_by_count":59,"citation_normalized_percentile":{"value":0.91603017,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"94","issue":"1","first_page":"400","last_page":"406"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.0008999999845400453,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hydrogen-plasma-treatment","display_name":"hydrogen plasma treatment","score":0.949999988079071},{"id":"https://openalex.org/keywords/n-type-zno","display_name":"n-type ZnO","score":0.8830000162124634},{"id":"https://openalex.org/keywords/zinc-oxide","display_name":"zinc oxide","score":0.7279999852180481},{"id":"https://openalex.org/keywords/hydrogen-incorporation","display_name":"hydrogen incorporation","score":0.7680000066757202},{"id":"https://openalex.org/keywords/deep-electron-traps","display_name":"deep electron traps","score":0.7850000262260437},{"id":"https://openalex.org/keywords/deep-hole-traps","display_name":"deep hole traps","score":0.7900000214576721},{"id":"https://openalex.org/keywords/surface-damage","display_name":"surface damage","score":0.7080000042915344},{"id":"https://openalex.org/keywords/luminescence","display_name":"luminescence","score":0.6880000233650208},{"id":"https://openalex.org/keywords/near-band-edge-emission","display_name":"near-band-edge emission","score":0.8270000219345093},{"id":"https://openalex.org/keywords/hydrogen-penetration-depth","display_name":"hydrogen penetration depth","score":0.6029999852180481},{"id":"https://openalex.org/keywords/electrical-properties","display_name":"electrical properties","score":0.4650000035762787},{"id":"https://openalex.org/keywords/optical-properties","display_name":"optical properties","score":0.9990000128746033}],"concepts":[{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.8182067275047302},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.7768597602844238},{"id":"https://openalex.org/C193493375","wikidata":"https://www.wikidata.org/wiki/Q1306232","display_name":"Penetration depth","level":2,"score":0.5851309895515442},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5517048835754395},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5240328907966614},{"id":"https://openalex.org/C148869448","wikidata":"https://www.wikidata.org/wiki/Q184240","display_name":"Luminescence","level":2,"score":0.4834235906600952},{"id":"https://openalex.org/C80107235","wikidata":"https://www.wikidata.org/wiki/Q7162625","display_name":"Penetration (warfare)","level":2,"score":0.45444804430007935},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4537113904953003},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.4499375820159912},{"id":"https://openalex.org/C54516573","wikidata":"https://www.wikidata.org/wiki/Q2294","display_name":"Proton","level":2,"score":0.4384266138076782},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.43195319175720215},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.3894508481025696},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.31989482045173645},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.1326686441898346},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.12503039836883545},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06290224194526672},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C42475967","wikidata":"https://www.wikidata.org/wiki/Q194292","display_name":"Operations research","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1579114","doi":"https://doi.org/10.1063/1.1579114","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1579114","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320321079","display_name":"Russian Foundation for Basic Research","ror":"https://ror.org/02mh1ke95"},{"id":"https://openalex.org/F4320338281","display_name":"Army Research Office","ror":"https://ror.org/05epdh915"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":33,"referenced_works":["https://openalex.org/W266175938","https://openalex.org/W1969619515","https://openalex.org/W1970424873","https://openalex.org/W1976296976","https://openalex.org/W1988325907","https://openalex.org/W1995701518","https://openalex.org/W1996041743","https://openalex.org/W1996785357","https://openalex.org/W1997064867","https://openalex.org/W2001406897","https://openalex.org/W2009388090","https://openalex.org/W2014501618","https://openalex.org/W2015152099","https://openalex.org/W2018627945","https://openalex.org/W2029612537","https://openalex.org/W2031180523","https://openalex.org/W2041477931","https://openalex.org/W2043792273","https://openalex.org/W2045789701","https://openalex.org/W2047113048","https://openalex.org/W2047517918","https://openalex.org/W2052668636","https://openalex.org/W2065866545","https://openalex.org/W2066179646","https://openalex.org/W2072993219","https://openalex.org/W2074454695","https://openalex.org/W2074937372","https://openalex.org/W2079662148","https://openalex.org/W2090510234","https://openalex.org/W2090698061","https://openalex.org/W2093086698","https://openalex.org/W2094239340","https://openalex.org/W4240680859"],"related_works":["https://openalex.org/W1968220060","https://openalex.org/W2324092993","https://openalex.org/W2014502352","https://openalex.org/W2630944008","https://openalex.org/W2023289826","https://openalex.org/W7132375219","https://openalex.org/W2090845988","https://openalex.org/W2513923625","https://openalex.org/W2064778294","https://openalex.org/W2318889253"],"abstract_inverted_index":{"The":[0,47,113],"effects":[1],"of":[2,49,69,83,91,134],"hydrogen":[3,27,51,80,156],"plasma":[4,18,81,126],"treatment":[5,82],"on":[6],"high-quality":[7],"bulk":[8],"n-ZnO":[9],"crystals":[10],"were":[11],"studied.":[12],"It":[13],"is":[14,85,115,145],"shown":[15,86,146],"that":[16,45,74],"after":[17],"exposure":[19],"at":[20,116],"200":[21],"\u00b0C":[22],"for":[23],"0.5":[24],"h":[25],"the":[26,30,57,63,67,89,92,121,132,137,141,151,155,160],"penetrates":[28],"into":[29],"material":[31],"down":[32,149],"to":[33,41,61,73,87,100,120,147,150,154],"about":[34,62],"20":[35],"\u03bcm":[36],"and":[37,96,99],"shows":[38],"concentrations":[39],"close":[40],"1017":[42],"cm\u22123":[43],"in":[44,56,75,109,131,140,159],"region.":[46],"incorporation":[48],"this":[50,129],"coincides":[52],"with":[53],"an":[54],"increase":[55,88,130,148],"shallow":[58],"donor":[59],"concentration":[60,68,90],"same":[64],"level":[65],"as":[66],"hydrogen.":[70],"In":[71],"contrast":[72],"most":[76],"other":[77],"semiconductor":[78],"materials,":[79],"ZnO":[84],"already":[93],"existing":[94],"electron":[95,102],"hole":[97],"traps":[98,103],"introduce":[101],"near":[104,142],"0.55":[105],"eV,":[106],"earlier":[107],"observed":[108],"proton":[110],"irradiated":[111],"samples.":[112],"effect":[114],"least":[117],"partially":[118],"due":[119],"surface":[122],"damage":[123],"caused":[124],"by":[125],"exposure.":[127],"Despite":[128],"density":[133],"deep":[135],"traps,":[136],"luminescence":[138],"intensity":[139],"band-edge":[143],"region":[144],"depth":[152,158],"corresponding":[153],"penetration":[157],"material.":[161]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}