{"id":"https://openalex.org/W1990322565","doi":"https://doi.org/10.1016/j.egypro.2012.07.031","title":"Light Induced Degradation in mc-Si Based on Compensated Silicon","display_name":"Light Induced Degradation in mc-Si Based on Compensated Silicon","publication_year":2012,"publication_date":"2012-01-01","ids":{"openalex":"https://openalex.org/W1990322565","doi":"https://doi.org/10.1016/j.egypro.2012.07.031","mag":"1990322565"},"language":"en","primary_location":{"id":"doi:10.1016/j.egypro.2012.07.031","doi":"https://doi.org/10.1016/j.egypro.2012.07.031","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.egypro.2012.07.031","pdf_url":"https://www.sciencedirect.com/science/article/pii/S1876610212012441/pdf","source":{"id":"https://openalex.org/S75069817","display_name":"Energy Procedia","issn_l":"1876-6102","issn":["1876-6102"],"is_oa":true,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","jufo-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Energy Procedia","raw_type":"journal-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.sciencedirect.com/science/article/pii/S1876610212012441/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5015986179","display_name":"Rune S\u00f8nden\u00e5","orcid":"https://orcid.org/0000-0001-7533-3676","observed_orcids":["https://orcid.org/0000-0001-7533-3676"]},"institutions":[{"id":"https://openalex.org/I3130438513","display_name":"Institute for Energy Technology","ror":"https://ror.org/02jqtg033","country_code":"NO","type":"facility","lineage":["https://openalex.org/I3130438513"]}],"countries":["NO"],"is_corresponding":true,"raw_author_name":"R. S\u00f8nden\u00e5","raw_affiliation_strings":["Institute for Energy Technology, P.O.Box 40, N-2027 Kjeller, Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Energy Technology, P.O.Box 40, N-2027 Kjeller, Norway","institution_ids":["https://openalex.org/I3130438513"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111673076","display_name":"A.-K. S\u00f8iland","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210110568","display_name":"Elkem (Norway)","ror":"https://ror.org/01rbqr638","country_code":"NO","type":"company","lineage":["https://openalex.org/I4210110568"]}],"countries":["NO"],"is_corresponding":false,"raw_author_name":"A.-K. S\u00f8iland","raw_affiliation_strings":["Elkem Solar AS, P.O.Box 8040, N-4675 V\u00e5gsbygd, Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Elkem Solar AS, P.O.Box 8040, N-4675 V\u00e5gsbygd, Norway","institution_ids":["https://openalex.org/I4210110568"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110765385","display_name":"Hallvard Angelsk\u00e5r","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I3130438513","display_name":"Institute for Energy Technology","ror":"https://ror.org/02jqtg033","country_code":"NO","type":"facility","lineage":["https://openalex.org/I3130438513"]}],"countries":["NO"],"is_corresponding":false,"raw_author_name":"H. Angelsk\u00e5r","raw_affiliation_strings":["Institute for Energy Technology, P.O.Box 40, N-2027 Kjeller, Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Energy Technology, P.O.Box 40, N-2027 Kjeller, Norway","institution_ids":["https://openalex.org/I3130438513"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109890310","display_name":"Arve Holt","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I3130438513","display_name":"Institute for Energy Technology","ror":"https://ror.org/02jqtg033","country_code":"NO","type":"facility","lineage":["https://openalex.org/I3130438513"]}],"countries":["NO"],"is_corresponding":false,"raw_author_name":"A. Holt","raw_affiliation_strings":["Institute for Energy Technology, P.O.Box 40, N-2027 Kjeller, Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Energy Technology, P.O.Box 40, N-2027 Kjeller, Norway","institution_ids":["https://openalex.org/I3130438513"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5015986179"],"corresponding_institution_ids":["https://openalex.org/I3130438513"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":1,"citation_normalized_percentile":{"value":0.07886864,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"27","issue":null,"first_page":"70","last_page":"75"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/light-induced-degradation","display_name":"light-induced degradation","score":0.8500000238418579},{"id":"https://openalex.org/keywords/polycrystalline-silicon","display_name":"polycrystalline silicon","score":0.9470000267028809},{"id":"https://openalex.org/keywords/compensated-silicon","display_name":"compensated silicon","score":0.8299999833106995},{"id":"https://openalex.org/keywords/boron-oxygen-defects","display_name":"boron-oxygen defects","score":0.9480000138282776},{"id":"https://openalex.org/keywords/minority-carrier-lifetime","display_name":"minority carrier lifetime","score":0.972000002861023},{"id":"https://openalex.org/keywords/solar-cell-degradation","display_name":"solar cell degradation","score":0.5379999876022339},{"id":"https://openalex.org/keywords/photoluminescence-imaging","display_name":"photoluminescence imaging","score":0.8999999761581421},{"id":"https://openalex.org/keywords/grain-boundaries","display_name":"grain boundaries","score":0.6830000281333923},{"id":"https://openalex.org/keywords/dislocations","display_name":"dislocations","score":0.5799999833106995},{"id":"https://openalex.org/keywords/metal-impurities","display_name":"metal impurities","score":0.5830000042915344},{"id":"https://openalex.org/keywords/czochralski-silicon","display_name":"Czochralski silicon","score":0.8130000233650208}],"concepts":[{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.8587486743927002},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8359909057617188},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.7994375228881836},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.7457053661346436},{"id":"https://openalex.org/C501308230","wikidata":"https://www.wikidata.org/wiki/Q618","display_name":"Boron","level":2,"score":0.7007586359977722},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6724209785461426},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5317296981811523},{"id":"https://openalex.org/C2780824857","wikidata":"https://www.wikidata.org/wiki/Q58803","display_name":"Solar cell","level":2,"score":0.5157492756843567},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5153831243515015},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5097247958183289},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.5031945109367371},{"id":"https://openalex.org/C47908070","wikidata":"https://www.wikidata.org/wiki/Q900515","display_name":"Grain boundary","level":3,"score":0.47760531306266785},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.37462401390075684},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.20941376686096191},{"id":"https://openalex.org/C87976508","wikidata":"https://www.wikidata.org/wiki/Q1498213","display_name":"Microstructure","level":2,"score":0.11118140816688538},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.07160618901252747},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.egypro.2012.07.031","doi":"https://doi.org/10.1016/j.egypro.2012.07.031","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.egypro.2012.07.031","pdf_url":"https://www.sciencedirect.com/science/article/pii/S1876610212012441/pdf","source":{"id":"https://openalex.org/S75069817","display_name":"Energy Procedia","issn_l":"1876-6102","issn":["1876-6102"],"is_oa":true,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","jufo-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Energy Procedia","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1016/j.egypro.2012.07.031","doi":"https://doi.org/10.1016/j.egypro.2012.07.031","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.egypro.2012.07.031","pdf_url":"https://www.sciencedirect.com/science/article/pii/S1876610212012441/pdf","source":{"id":"https://openalex.org/S75069817","display_name":"Energy Procedia","issn_l":"1876-6102","issn":["1876-6102"],"is_oa":true,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","jufo-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Energy Procedia","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1990322565.pdf","grobid_xml":"https://content.openalex.org/works/W1990322565.grobid-xml"},"referenced_works_count":19,"referenced_works":["https://openalex.org/W947545068","https://openalex.org/W1985375874","https://openalex.org/W1993260610","https://openalex.org/W1995470854","https://openalex.org/W2000553194","https://openalex.org/W2000681769","https://openalex.org/W2003811349","https://openalex.org/W2007705649","https://openalex.org/W2013725769","https://openalex.org/W2033227672","https://openalex.org/W2038142050","https://openalex.org/W2045332311","https://openalex.org/W2062719212","https://openalex.org/W2065569650","https://openalex.org/W2073231755","https://openalex.org/W2078581897","https://openalex.org/W2084997550","https://openalex.org/W2123564460","https://openalex.org/W2151154508"],"related_works":["https://openalex.org/W135501539","https://openalex.org/W3034917671","https://openalex.org/W2086356297","https://openalex.org/W7057633954","https://openalex.org/W2059743869","https://openalex.org/W1663383707","https://openalex.org/W1965085536","https://openalex.org/W2169202687","https://openalex.org/W2917910969","https://openalex.org/W2037288815"],"abstract_inverted_index":{"Light":[0],"induced":[1,99],"degradation":[2,82,100,121],"caused":[3],"by":[4,35],"boron-oxygen":[5],"related":[6],"defects":[7],"in":[8,92,101],"boron":[9,67],"doped":[10,68],"Czochralski":[11],"silicon":[12,28,70,79,107],"is":[13,33,83],"known":[14,60],"to":[15,49,61],"considerably":[16],"reduce":[17],"the":[18,29,63,78,90,97,120],"solar":[19],"cell":[20],"conversion":[21],"efficiency":[22],"upon":[23],"initial":[24],"use.":[25],"In":[26,47],"multicrystalline":[27,69,93],"minority":[30],"carrier":[31],"lifetime":[32,64,91,112],"determined":[34],"grain":[36],"boundaries,":[37],"twins,":[38],"dislocations":[39],"as":[40,42,53],"well":[41],"intentional":[43],"and":[44,56],"unintentional":[45],"contaminants.":[46],"addition":[48],"metallic":[50],"impurities":[51],"such":[52],"iron,":[54],"chromium":[55],"copper,":[57],"which":[58],"are":[59,108],"degrade":[62],"under":[65],"illumination,":[66],"also":[71],"contains":[72],"oxygen.":[73],"With":[74],"increasing":[75],"quality":[76],"of":[77,119],"feedstock":[80],"BO-related":[81],"becoming":[84],"an":[85],"increasingly":[86],"important":[87],"factor":[88],"limiting":[89],"wafers.":[94,123],"Using":[95],"photoluminescence-imaging":[96],"light":[98],"mc-Si":[102],"wafers":[103],"based":[104],"on":[105],"compensated":[106],"studied.":[109],"High":[110],"resolution":[111],"maps":[113],"allow":[114],"for":[115],"a":[116],"spatial":[117],"evaluation":[118],"across":[122]},"counts_by_year":[{"year":2016,"cited_by_count":1}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}