{"id":"https://openalex.org/W1990245281","doi":"https://doi.org/10.1016/j.mee.2009.03.019","title":"Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications","display_name":"Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications","publication_year":2009,"publication_date":"2009-03-11","ids":{"openalex":"https://openalex.org/W1990245281","doi":"https://doi.org/10.1016/j.mee.2009.03.019","mag":"1990245281"},"language":"en","primary_location":{"id":"doi:10.1016/j.mee.2009.03.019","doi":"https://doi.org/10.1016/j.mee.2009.03.019","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mee.2009.03.019","pdf_url":null,"source":{"id":"https://openalex.org/S158028765","display_name":"Microelectronic Engineering","issn_l":"0167-9317","issn":["0167-9317","1873-5568"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronic Engineering","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085655176","display_name":"Grzegorz \u0141upina","orcid":"https://orcid.org/0000-0002-2197-2488","observed_orcids":["https://orcid.org/0000-0002-2197-2488"]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"G. \u0141upina","raw_affiliation_strings":["IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]},{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023969140","display_name":"Olaf Seifarth","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"O. Seifarth","raw_affiliation_strings":["IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]},{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010403620","display_name":"Grzegorz Koz\u0142owski","orcid":"https://orcid.org/0000-0002-2025-007X","observed_orcids":["https://orcid.org/0000-0002-2025-007X"]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"G. Koz\u0142owski","raw_affiliation_strings":["IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]},{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":null,"display_name":"P. Dudek","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"P. Dudek","raw_affiliation_strings":["IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]},{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103220250","display_name":"J. D\u0105browski","orcid":"https://orcid.org/0000-0001-8810-8021","observed_orcids":["https://orcid.org/0000-0001-8810-8021"]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. D\u0105browski","raw_affiliation_strings":["IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]},{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054294412","display_name":"G. Lippert","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"G. Lippert","raw_affiliation_strings":["IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]},{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110140175","display_name":"H.\u2010J. M\u00fcssig","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H.-J. M\u00fcssig","raw_affiliation_strings":["IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]},{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany#TAB#","institution_ids":["https://openalex.org/I92894754"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5085655176"],"corresponding_institution_ids":["https://openalex.org/I92894754"],"apc_list":{"value":2860,"currency":"USD","value_usd":2860},"apc_paid":null,"fwci":1.5466,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.82567055,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":"86","issue":"7-9","first_page":"1842","last_page":"1844"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.5922999978065491,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.5922999978065491,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.37619999051094055,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13249","display_name":"Dielectric properties of ceramics","score":0.006000000052154064,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectric-memory","display_name":"ferroelectric memory","score":0.7789999842643738},{"id":"https://openalex.org/keywords/dielectric-constant","display_name":"dielectric constant","score":0.8009999990463257},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.6710000038146973},{"id":"https://openalex.org/keywords/tin-substrate","display_name":"TiN substrate","score":0.7269999980926514},{"id":"https://openalex.org/keywords/bahfo3","display_name":"BaHfO3","score":0.8270000219345093},{"id":"https://openalex.org/keywords/bazro3","display_name":"BaZrO3","score":0.9789999723434448},{"id":"https://openalex.org/keywords/srhfo3","display_name":"SrHfO3","score":1.0},{"id":"https://openalex.org/keywords/titanium-substitution","display_name":"titanium substitution","score":0.7300000190734863},{"id":"https://openalex.org/keywords/crystallization-temperature","display_name":"crystallization temperature","score":0.9750000238418579},{"id":"https://openalex.org/keywords/capacitance-density","display_name":"capacitance density","score":0.8790000081062317},{"id":"https://openalex.org/keywords/thin-films","display_name":"thin films","score":0.4180000126361847}],"concepts":[{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.8813748359680176},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.788361132144928},{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.7402627468109131},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.7052305936813354},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.5736443400382996},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.493101567029953},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4915378987789154},{"id":"https://openalex.org/C155011858","wikidata":"https://www.wikidata.org/wiki/Q3036449","display_name":"Perovskite (structure)","level":2,"score":0.46814802289009094},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.4436872899532318},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3894154727458954},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2696126699447632},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.13757622241973877},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.12902286648750305},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.12652915716171265},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.060291945934295654},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.mee.2009.03.019","doi":"https://doi.org/10.1016/j.mee.2009.03.019","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mee.2009.03.019","pdf_url":null,"source":{"id":"https://openalex.org/S158028765","display_name":"Microelectronic Engineering","issn_l":"0167-9317","issn":["0167-9317","1873-5568"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronic Engineering","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321114","display_name":"Bundesministerium f\u00fcr Bildung und Forschung","ror":"https://ror.org/04pz7b180"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W253779177","https://openalex.org/W1665645693","https://openalex.org/W1998320671","https://openalex.org/W2003265539","https://openalex.org/W2012335616","https://openalex.org/W2024803671","https://openalex.org/W2059450000","https://openalex.org/W2093417831"],"related_works":["https://openalex.org/W7099210904","https://openalex.org/W2011679832","https://openalex.org/W2003265539","https://openalex.org/W2043038000","https://openalex.org/W7046416336","https://openalex.org/W2015583972","https://openalex.org/W2024676997","https://openalex.org/W2069582928","https://openalex.org/W4392699775","https://openalex.org/W7162402452"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}