{"id":"https://openalex.org/W1988186272","doi":"https://doi.org/10.1116/1.584977","title":"I n s i t u x-ray photoelectron spectroscopic study of remote plasma enhanced chemical vapor deposition of silicon nitride on sulfide passivated InP","display_name":"I n s i t u x-ray photoelectron spectroscopic study of remote plasma enhanced chemical vapor deposition of silicon nitride on sulfide passivated InP","publication_year":1990,"publication_date":"1990-07-01","ids":{"openalex":"https://openalex.org/W1988186272","doi":"https://doi.org/10.1116/1.584977","mag":"1988186272"},"language":"en","primary_location":{"id":"doi:10.1116/1.584977","doi":"https://doi.org/10.1116/1.584977","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.584977","pdf_url":null,"source":{"id":"https://openalex.org/S4210191927","display_name":"Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena","issn_l":"0734-211X","issn":["0734-211X","2327-9877"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320061","host_organization_name":"AIP Publishing","host_organization_lineage":["https://openalex.org/P4310320061","https://openalex.org/P4310320257"],"host_organization_lineage_names":["AIP Publishing","American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055758017","display_name":"Woon\u2010Ming Lau","orcid":"https://orcid.org/0000-0002-9813-5215","observed_orcids":["https://orcid.org/0000-0002-9813-5215"]},"institutions":[{"id":"https://openalex.org/I125749732","display_name":"Western University","ror":"https://ror.org/02grkyz14","country_code":"CA","type":"education","lineage":["https://openalex.org/I125749732"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"W. M. Lau","raw_affiliation_strings":["Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7, Canada","institution_ids":["https://openalex.org/I125749732"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102776924","display_name":"S. Jin","orcid":"https://orcid.org/0009-0001-7018-5675","observed_orcids":["https://orcid.org/0009-0001-7018-5675"]},"institutions":[{"id":"https://openalex.org/I125749732","display_name":"Western University","ror":"https://ror.org/02grkyz14","country_code":"CA","type":"education","lineage":["https://openalex.org/I125749732"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"S. Jin","raw_affiliation_strings":["Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7, Canada","institution_ids":["https://openalex.org/I125749732"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044696400","display_name":"Xueyin Wu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I125749732","display_name":"Western University","ror":"https://ror.org/02grkyz14","country_code":"CA","type":"education","lineage":["https://openalex.org/I125749732"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"X.-W. Wu","raw_affiliation_strings":["Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7, Canada","institution_ids":["https://openalex.org/I125749732"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113581102","display_name":"S. J. Ingrey","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Ingrey","raw_affiliation_strings":["Bell-Northern Research Ltd., Station C, Ottawa K1Y 4H7, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bell-Northern Research Ltd., Station C, Ottawa K1Y 4H7, Canada","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.7824,"has_fulltext":false,"cited_by_count":46,"citation_normalized_percentile":{"value":0.90291163,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"8","issue":"4","first_page":"848","last_page":"855"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.45210000872612,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.45210000872612,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.42260000109672546,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.031700000166893005,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"indium phosphide","score":0.9240000247955322},{"id":"https://openalex.org/keywords/silicon-nitride","display_name":"silicon nitride","score":0.8069999814033508},{"id":"https://openalex.org/keywords/remote-plasma-enhanced-chemical-vapor-deposition","display_name":"remote plasma-enhanced chemical vapor deposition","score":0.8320000171661377},{"id":"https://openalex.org/keywords/sulfide-passivation","display_name":"sulfide passivation","score":0.8600000143051147},{"id":"https://openalex.org/keywords/sodium-sulfide","display_name":"sodium sulfide","score":0.8330000042915344},{"id":"https://openalex.org/keywords/ammonium-sulfide","display_name":"ammonium sulfide","score":0.9929999709129333},{"id":"https://openalex.org/keywords/in2s3","display_name":"indium sulfide","score":0.9459999799728394},{"id":"https://openalex.org/keywords/phosphorus-sulfides","display_name":"phosphorus sulfides","score":0.8159999847412109},{"id":"https://openalex.org/keywords/surface-states","display_name":"surface states","score":0.5759999752044678},{"id":"https://openalex.org/keywords/fermi-level","display_name":"Fermi level","score":0.7200000286102295},{"id":"https://openalex.org/keywords/sulfur-doping","display_name":"sulfur doping","score":0.8109999895095825},{"id":"https://openalex.org/keywords/interface-state-density","display_name":"interface state density","score":0.8569999933242798},{"id":"https://openalex.org/keywords/surface-band-bending","display_name":"surface band bending","score":0.7049999833106995},{"id":"https://openalex.org/keywords/capacitance-voltage-characteristics","display_name":"capacitance-voltage characteristics","score":0.656000018119812}],"concepts":[{"id":"https://openalex.org/C175708663","wikidata":"https://www.wikidata.org/wiki/Q899559","display_name":"X-ray photoelectron spectroscopy","level":2,"score":0.8270147442817688},{"id":"https://openalex.org/C2780596425","wikidata":"https://www.wikidata.org/wiki/Q221205","display_name":"Sulfide","level":2,"score":0.8056495189666748},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5819087624549866},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.49449393153190613},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.4414270222187042},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.43901464343070984},{"id":"https://openalex.org/C179104552","wikidata":"https://www.wikidata.org/wiki/Q11165","display_name":"Inorganic chemistry","level":1,"score":0.4389871656894684},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4386085867881775},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4307232201099396},{"id":"https://openalex.org/C19181183","wikidata":"https://www.wikidata.org/wiki/Q4854235","display_name":"Band bending","level":2,"score":0.4296726584434509},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.41806408762931824},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.4109564423561096},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.17605334520339966},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13370919227600098},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.1052597165107727},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.07731649279594421},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.584977","doi":"https://doi.org/10.1116/1.584977","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.584977","pdf_url":null,"source":{"id":"https://openalex.org/S4210191927","display_name":"Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena","issn_l":"0734-211X","issn":["0734-211X","2327-9877"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320061","host_organization_name":"AIP Publishing","host_organization_lineage":["https://openalex.org/P4310320061","https://openalex.org/P4310320257"],"host_organization_lineage_names":["AIP Publishing","American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2016758225","https://openalex.org/W2090998486","https://openalex.org/W2025255607","https://openalex.org/W2026499583","https://openalex.org/W2087547028","https://openalex.org/W2142229132","https://openalex.org/W2040764890","https://openalex.org/W2091002967","https://openalex.org/W2121107771","https://openalex.org/W4409183406"],"abstract_inverted_index":{"The":[0],"changes":[1,254],"in":[2,40,95,113,116,136,255],"chemical":[3,58],"composition":[4],"and":[5,11,20,24,69,97],"Fermi":[6],"level":[7],"position":[8],"of":[9,61,78,89,108,154,161,170,223,227,232],"n-":[10],"p-InP":[12],"surfaces":[13,53],"induced":[14],"by":[15,34,54,123,176,243],"reactions":[16],"with":[17,25,104,149,194],"sodium":[18],"sulfide":[19,22,29,51,71,82,125,130,156,190],"ammonium":[21,28],"solutions":[23],"vapor":[26,59,83],"from":[27],"solution":[30],"have":[31],"been":[32],"characterized":[33],"x-ray":[35],"photoelectron":[36],"spectroscopy":[37],"(XPS).":[38],"Further,":[39,111],"situ":[41],"XPS":[42,244],"analysis":[43],"was":[44,101,121,142,271],"used":[45],"to":[46,81,258],"study":[47,160],"interfaces":[48],"formed":[49,74],"on":[50,191,216,235,241,267],"passivated":[52,131,219],"remote":[55],"plasma":[56],"enhanced":[57],"deposition":[60],"silicon":[62,162,197,217,239],"nitride.":[63,198],"We":[64],"found":[65,166,185],"that":[66,167,186,207,246],"both":[67],"indium":[68,109],"phosphorus":[70],"phases":[72],"were":[73,250],"as":[75,229],"a":[76,208,230,236],"result":[77],"exposing":[79],"InP":[80,147,192,228,242],"at":[84,203],"room":[85],"temperature.":[86],"However,":[87,127,221],"most":[88],"the":[90,98,117,129,150,155,159,168,178,187,195,264,268],"surface":[91,100,137,188,224,248],"native":[92,171,189],"sulfides":[93],"dissolved":[94],"water":[96],"resultant":[99],"then":[102],"covered":[103,148],"about":[105],"one":[106],"monolayer":[107],"sulfide.":[110],"reduction":[112],"donor":[114],"states":[115,249],"upper":[118],"band":[119,225,256],"gap":[120],"evident":[122],"these":[124],"treatments.":[126],"heating":[128,146],"sample":[132],"caused":[133],"an":[134],"increase":[135],"states.":[138],"Sulfur":[139],"doping":[140],"effect":[141],"also":[143,184],"observed":[144],"upon":[145],"air":[151],"oxidation":[152],"products":[153],"vapor.":[157],"In":[158,181],"nitride":[163,172,240],"deposition,":[164],"we":[165,183],"formation":[169],"could":[173,213],"be":[174,214],"avoided":[175],"optimizing":[177],"processing":[179],"parameters.":[180],"addition,":[182],"reacted":[193],"deposited":[196],"Capitance\u2013voltage":[199],"(C\u2013V)":[200],"data":[201],"collected":[202],"1":[204],"MHz":[205],"indicate":[206,245],"low":[209],"interface":[210],"state":[211],"density":[212],"obtained":[215],"nitride/sulfide":[218],"InP.":[220],"measurements":[222],"bending":[226,257],"function":[231],"charging":[233],"potential":[234],"10":[237],"nm":[238],"slow":[247],"present":[251],"which":[252],"restricted":[253],"less":[259],"than":[260],"0.3":[261],"eV":[262],"when":[263],"applied":[265],"voltage":[266],"thin":[269],"dielectric":[270],"\u22122":[272],"V.":[273]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-10-17T09:40:24.721904","created_date":"2016-06-24T00:00:00"}