{"id":"https://openalex.org/W1987553804","doi":"https://doi.org/10.1016/s0022-0248(96)00623-9","title":"Growth of and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium","display_name":"Growth of and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium","publication_year":1997,"publication_date":"1997-01-01","ids":{"openalex":"https://openalex.org/W1987553804","doi":"https://doi.org/10.1016/s0022-0248(96)00623-9","mag":"1987553804"},"language":"en","primary_location":{"id":"doi:10.1016/s0022-0248(96)00623-9","doi":"https://doi.org/10.1016/s0022-0248(96)00623-9","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(96)00623-9","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5031355089","display_name":"O. Ambacher","orcid":"https://orcid.org/0000-0001-5193-9016","observed_orcids":["https://orcid.org/0000-0001-5193-9016"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"O. Ambacher","raw_affiliation_strings":["Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032823976","display_name":"Roman Dimitrov","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R. Dimitrov","raw_affiliation_strings":["Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"D. Lentz","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"D. Lentz","raw_affiliation_strings":["Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009436495","display_name":"T. Metzger","orcid":"https://orcid.org/0000-0001-7052-3016","observed_orcids":["https://orcid.org/0000-0001-7052-3016"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Metzger","raw_affiliation_strings":["Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049302923","display_name":"Walter Rieger","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"W. Rieger","raw_affiliation_strings":["Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5004139860","display_name":"M. Stutzmann","orcid":"https://orcid.org/0000-0002-0068-3505","observed_orcids":["https://orcid.org/0000-0002-0068-3505"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Stutzmann","raw_affiliation_strings":["Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Am Coulombwall, D-85748 Garching, Germany","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":1.9052,"has_fulltext":false,"cited_by_count":22,"citation_normalized_percentile":{"value":0.85007429,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"170","issue":"1-4","first_page":"335","last_page":"339"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/aluminum-nitride","display_name":"aluminum nitride","score":0.7919999957084656},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"gallium nitride","score":0.9810000061988831},{"id":"https://openalex.org/keywords/mocvd-growth","display_name":"MOCVD growth","score":0.6579999923706055},{"id":"https://openalex.org/keywords/triethylgallium","display_name":"triethylgallium","score":0.9570000171661377},{"id":"https://openalex.org/keywords/ammonia-precursor","display_name":"ammonia precursor","score":0.6959999799728394},{"id":"https://openalex.org/keywords/buffer-layer","display_name":"buffer layer","score":0.7080000042915344},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.8180000185966492},{"id":"https://openalex.org/keywords/thin-film-growth","display_name":"thin film growth","score":0.4410000145435333},{"id":"https://openalex.org/keywords/structural-properties","display_name":"structural properties","score":0.625},{"id":"https://openalex.org/keywords/optical-properties","display_name":"optical properties","score":0.8560000061988831},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":0.7960000038146973},{"id":"https://openalex.org/keywords/photoconductivity","display_name":"photoconductivity","score":0.6759999990463257},{"id":"https://openalex.org/keywords/photothermal-deflection","display_name":"photothermal deflection","score":0.9829999804496765}],"concepts":[{"id":"https://openalex.org/C2780464664","wikidata":"https://www.wikidata.org/wiki/Q2346835","display_name":"Triethylgallium","level":5,"score":0.9823440313339233},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.8385246396064758},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4292469024658203},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.37706947326660156},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20365571975708008},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.11843147873878479},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.06070950627326965}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0022-0248(96)00623-9","doi":"https://doi.org/10.1016/s0022-0248(96)00623-9","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(96)00623-9","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1966608527","https://openalex.org/W1974307205","https://openalex.org/W1989349689","https://openalex.org/W2009891531","https://openalex.org/W2019011101","https://openalex.org/W2019300557","https://openalex.org/W2019854687","https://openalex.org/W2035760900","https://openalex.org/W2037561827","https://openalex.org/W2045359186","https://openalex.org/W2047378758","https://openalex.org/W2054898241","https://openalex.org/W2057216300","https://openalex.org/W2063365076","https://openalex.org/W2066760180","https://openalex.org/W2072555039","https://openalex.org/W2081456112"],"related_works":["https://openalex.org/W1977111967","https://openalex.org/W1969194333","https://openalex.org/W2020952708","https://openalex.org/W107099208","https://openalex.org/W2024784390","https://openalex.org/W2587031997","https://openalex.org/W2081750025","https://openalex.org/W1977665989","https://openalex.org/W2037561827","https://openalex.org/W2325258135"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}