{"id":"https://openalex.org/W1987112466","doi":"https://doi.org/10.1049/el:19790111","title":"Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold current","display_name":"Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold current","publication_year":1979,"publication_date":"1979-03-01","ids":{"openalex":"https://openalex.org/W1987112466","doi":"https://doi.org/10.1049/el:19790111","mag":"1987112466"},"language":"en","primary_location":{"id":"doi:10.1049/el:19790111","doi":"https://doi.org/10.1049/el:19790111","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19790111","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5000288516","display_name":"Edward J. Thrush","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"E.J. Thrush","raw_affiliation_strings":["Standard Telecommunication Laboratories Limited, Landon Road, Harlow, Essex CM17 9NA, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Standard Telecommunication Laboratories Limited, Landon Road, Harlow, Essex CM17 9NA, UK","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020602486","display_name":"Peter R. Selway","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P.R. Selway","raw_affiliation_strings":["Standard Telecommunication Laboratories Limited, Landon Road, Harlow, Essex CM17 9NA, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Standard Telecommunication Laboratories Limited, Landon Road, Harlow, Essex CM17 9NA, UK","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036702192","display_name":"Gordon D. Henshall","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"G.D. Henshall","raw_affiliation_strings":["Standard Telecommunication Laboratories Limited, Landon Road, Harlow, Essex CM17 9NA, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Standard Telecommunication Laboratories Limited, Landon Road, Harlow, Essex CM17 9NA, UK","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2590,"currency":"USD","value_usd":2590},"apc_paid":null,"fwci":5.7433,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.95510034,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"15","issue":"5","first_page":"156","last_page":"158"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9609000086784363,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9609000086784363,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.02280000038444996,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.006899999920278788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/threshold-current","display_name":"threshold current","score":0.7279999852180481},{"id":"https://openalex.org/keywords/interfacial-recombination","display_name":"interfacial recombination","score":0.8090000152587891},{"id":"https://openalex.org/keywords/nonradiative-recombination","display_name":"nonradiative recombination","score":0.9480000138282776},{"id":"https://openalex.org/keywords/carrier-lifetime","display_name":"carrier lifetime","score":0.9800000190734863},{"id":"https://openalex.org/keywords/interface-recombination-velocity","display_name":"interface recombination velocity","score":0.7879999876022339},{"id":"https://openalex.org/keywords/semiconductor-lasers","display_name":"semiconductor lasers","score":0.5379999876022339}],"concepts":[{"id":"https://openalex.org/C156695909","wikidata":"https://www.wikidata.org/wiki/Q3373825","display_name":"Recombination","level":3,"score":0.7622722387313843},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6907497644424438},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6131818294525146},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6086739897727966},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.5820978879928589},{"id":"https://openalex.org/C111154242","wikidata":"https://www.wikidata.org/wiki/Q923545","display_name":"Spontaneous emission","level":3,"score":0.5414931178092957},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.5369197130203247},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.5060598254203796},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.47359493374824524},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.4716711938381195},{"id":"https://openalex.org/C14174561","wikidata":"https://www.wikidata.org/wiki/Q3037612","display_name":"Double heterostructure","level":4,"score":0.43868938088417053},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.42323940992355347},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.4165361225605011},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.4111374318599701},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.23977187275886536},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.20950335264205933},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.1784566044807434},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.16502121090888977},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14868029952049255},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10724806785583496},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.10449427366256714},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1049/el:19790111","doi":"https://doi.org/10.1049/el:19790111","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19790111","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W2037623818"],"related_works":["https://openalex.org/W2043026276","https://openalex.org/W2085478805","https://openalex.org/W1992075996","https://openalex.org/W2045060185","https://openalex.org/W2025634846","https://openalex.org/W2061448145","https://openalex.org/W2007545269","https://openalex.org/W2092380442","https://openalex.org/W1991477201","https://openalex.org/W2081635985"],"abstract_inverted_index":{"Double":[0],"heterostructure":[1],"laser":[2],"junctions":[3,57],"have":[4],"been":[5],"prepared":[6],"by":[7,59],"the":[8],"metalorganic":[9],"vapour":[10],"deposition":[11],"process":[12],"and":[13,18,31,36,62],"evaluated":[14],"for":[15,19],"threshold":[16],"current":[17],"nonradiative":[20,44],"recombination":[21,69],"characteristics.":[22],"Threshold":[23],"currents":[24],"around":[25],"850":[26],"A":[27],"cm\u22122":[28],"were":[29],"obtained,":[30],"measurements":[32],"of":[33,46,71],"carrier":[34],"lifetime":[35,45],"spontaneous":[37],"emission":[38],"efficiency":[39],"correlate":[40],"well":[41],"with":[42],"a":[43],"20":[47],"ns.":[48],"This":[49],"value":[50],"is":[51],"similar":[52],"to":[53],"those":[54],"obtained":[55],"in":[56],"grown":[58],"liquid-phase":[60],"epitaxy":[61],"puts":[63],"an":[64],"upper":[65],"limit":[66],"on":[67],"interface":[68],"velocity":[70],"500":[72],"cm":[73],"s\u22121.":[74]},"counts_by_year":[{"year":2023,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}