{"id":"https://openalex.org/W1986320163","doi":"https://doi.org/10.1016/s0022-0248(97)00247-9","title":"In situ substrate preparation for high-quality SiC chemical vapour deposition","display_name":"In situ substrate preparation for high-quality SiC chemical vapour deposition","publication_year":1997,"publication_date":"1997-11-01","ids":{"openalex":"https://openalex.org/W1986320163","doi":"https://doi.org/10.1016/s0022-0248(97)00247-9","mag":"1986320163"},"language":"en","primary_location":{"id":"doi:10.1016/s0022-0248(97)00247-9","doi":"https://doi.org/10.1016/s0022-0248(97)00247-9","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(97)00247-9","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023135896","display_name":"Christer Hallin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102134673","display_name":"Link\u00f6ping University","ror":"https://ror.org/05ynxx418","country_code":"SE","type":"education","lineage":["https://openalex.org/I102134673"]}],"countries":["SE"],"is_corresponding":true,"raw_author_name":"C. Hallin","raw_affiliation_strings":["Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden","institution_ids":["https://openalex.org/I102134673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030323388","display_name":"Fredrik Owman","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102134673","display_name":"Link\u00f6ping University","ror":"https://ror.org/05ynxx418","country_code":"SE","type":"education","lineage":["https://openalex.org/I102134673"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"F. Owman","raw_affiliation_strings":["Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden","institution_ids":["https://openalex.org/I102134673"]}]},{"author_position":"middle","author":{"id":null,"display_name":"P. M\u00e5rtensson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102134673","display_name":"Link\u00f6ping University","ror":"https://ror.org/05ynxx418","country_code":"SE","type":"education","lineage":["https://openalex.org/I102134673"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"P. M\u00e5rtensson","raw_affiliation_strings":["Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden","institution_ids":["https://openalex.org/I102134673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111946187","display_name":"A. Ellison","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102134673","display_name":"Link\u00f6ping University","ror":"https://ror.org/05ynxx418","country_code":"SE","type":"education","lineage":["https://openalex.org/I102134673"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"A. Ellison","raw_affiliation_strings":["Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden","institution_ids":["https://openalex.org/I102134673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009363380","display_name":"Andrey O. Konstantinov","orcid":"https://orcid.org/0000-0001-9502-9495","observed_orcids":["https://orcid.org/0000-0001-9502-9495"]},"institutions":[{"id":"https://openalex.org/I102134673","display_name":"Link\u00f6ping University","ror":"https://ror.org/05ynxx418","country_code":"SE","type":"education","lineage":["https://openalex.org/I102134673"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"A. Konstantinov","raw_affiliation_strings":["Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden","institution_ids":["https://openalex.org/I102134673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012294014","display_name":"Olof Kordina","orcid":"https://orcid.org/0000-0002-8265-8230","observed_orcids":["https://orcid.org/0000-0002-8265-8230"]},"institutions":[{"id":"https://openalex.org/I102134673","display_name":"Link\u00f6ping University","ror":"https://ror.org/05ynxx418","country_code":"SE","type":"education","lineage":["https://openalex.org/I102134673"]},{"id":"https://openalex.org/I4210086503","display_name":"ABB (Sweden)","ror":"https://ror.org/0033n4009","country_code":"SE","type":"company","lineage":["https://openalex.org/I4210086503","https://openalex.org/I885143765"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"O. Kordina","raw_affiliation_strings":["ABB Corporate Research, S-721 78 V\u00e4ster\u00e5s, Sweden","Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ABB Corporate Research, S-721 78 V\u00e4ster\u00e5s, Sweden","institution_ids":["https://openalex.org/I4210086503"]},{"raw_affiliation_string":"Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden","institution_ids":["https://openalex.org/I102134673"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030833419","display_name":"Erik Janz\u00e9n","orcid":"https://orcid.org/0000-0001-7721-5091","observed_orcids":["https://orcid.org/0000-0001-7721-5091"]},"institutions":[{"id":"https://openalex.org/I102134673","display_name":"Link\u00f6ping University","ror":"https://ror.org/05ynxx418","country_code":"SE","type":"education","lineage":["https://openalex.org/I102134673"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"E. Janz\u00e9n","raw_affiliation_strings":["Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics and Measurement Technology, Link\u00f6ping University, S-58183 Link\u00f6ping, Sweden","institution_ids":["https://openalex.org/I102134673"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5023135896"],"corresponding_institution_ids":["https://openalex.org/I102134673"],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":5.2886,"has_fulltext":false,"cited_by_count":124,"citation_normalized_percentile":{"value":0.9531903,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"181","issue":"3","first_page":"241","last_page":"253"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10132","display_name":"Advanced ceramic materials synthesis","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2503","display_name":"Ceramics and Composites"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"silicon carbide","score":0.9169999957084656},{"id":"https://openalex.org/keywords/chemical-vapor-deposition","display_name":"chemical vapor deposition","score":0.7369999885559082},{"id":"https://openalex.org/keywords/substrate-preparation","display_name":"substrate preparation","score":0.75},{"id":"https://openalex.org/keywords/hydrogen-etching","display_name":"hydrogen etching","score":0.8270000219345093},{"id":"https://openalex.org/keywords/4h-sic","display_name":"4H-SiC","score":0.9459999799728394},{"id":"https://openalex.org/keywords/6h-sic","display_name":"6H-SiC","score":1.0},{"id":"https://openalex.org/keywords/0001-surface","display_name":"(0001) surface","score":0.7279999852180481},{"id":"https://openalex.org/keywords/off-axis-substrates","display_name":"off-axis substrates","score":0.8100000023841858},{"id":"https://openalex.org/keywords/stacking-faults","display_name":"stacking faults","score":0.7509999871253967},{"id":"https://openalex.org/keywords/step-bunching","display_name":"step bunching","score":0.890999972820282},{"id":"https://openalex.org/keywords/surface-roughening","display_name":"surface roughening","score":0.9710000157356262},{"id":"https://openalex.org/keywords/epitaxial-quality","display_name":"epitaxial quality","score":0.9139999747276306},{"id":"https://openalex.org/keywords/surface-defects","display_name":"surface defects","score":0.3149999976158142}],"concepts":[{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.7647157907485962},{"id":"https://openalex.org/C33347731","wikidata":"https://www.wikidata.org/wiki/Q285210","display_name":"Stacking","level":2,"score":0.6958739757537842},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6927339434623718},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.6843211054801941},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6764370799064636},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6233043074607849},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6040438413619995},{"id":"https://openalex.org/C2777822432","wikidata":"https://www.wikidata.org/wiki/Q216681","display_name":"In situ","level":2,"score":0.5389092564582825},{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.5369624495506287},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4857635796070099},{"id":"https://openalex.org/C33220542","wikidata":"https://www.wikidata.org/wiki/Q6086567","display_name":"Isotropic etching","level":4,"score":0.4519292712211609},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.4474400281906128},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.4447180926799774},{"id":"https://openalex.org/C134121241","wikidata":"https://www.wikidata.org/wiki/Q899301","display_name":"Yield (engineering)","level":2,"score":0.419264554977417},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.388388067483902},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.3821846842765808},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.37891796231269836},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34486499428749084},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2970617413520813},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.251911461353302},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0845457911491394},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0022-0248(97)00247-9","doi":"https://doi.org/10.1016/s0022-0248(97)00247-9","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(97)00247-9","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1571455188","https://openalex.org/W1967675696","https://openalex.org/W1974273406","https://openalex.org/W1977702483","https://openalex.org/W1993660582","https://openalex.org/W2011657563","https://openalex.org/W2018691491","https://openalex.org/W2025516977","https://openalex.org/W2026984262","https://openalex.org/W2031208286","https://openalex.org/W2031839685","https://openalex.org/W2032851827","https://openalex.org/W2035941801","https://openalex.org/W2037189182","https://openalex.org/W2040447820","https://openalex.org/W2045110553","https://openalex.org/W2054412050","https://openalex.org/W2060898294","https://openalex.org/W2077502897","https://openalex.org/W2082184386","https://openalex.org/W2112575049","https://openalex.org/W4237826404"],"related_works":["https://openalex.org/W2001749973","https://openalex.org/W2017772636","https://openalex.org/W2613373189","https://openalex.org/W2076993962","https://openalex.org/W2054412050","https://openalex.org/W1993640344","https://openalex.org/W7196951340","https://openalex.org/W804286058","https://openalex.org/W2522514493","https://openalex.org/W1994806579"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":8},{"year":2013,"cited_by_count":8},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}