{"id":"https://openalex.org/W1986237948","doi":"https://doi.org/10.1007/s13391-013-3154-7","title":"Static induction transistor using TaN thin film as gate electrode for high-performance application","display_name":"Static induction transistor using TaN thin film as gate electrode for high-performance application","publication_year":2014,"publication_date":"2014-03-01","ids":{"openalex":"https://openalex.org/W1986237948","doi":"https://doi.org/10.1007/s13391-013-3154-7","mag":"1986237948"},"language":"en","primary_location":{"id":"doi:10.1007/s13391-013-3154-7","doi":"https://doi.org/10.1007/s13391-013-3154-7","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s13391-013-3154-7","pdf_url":null,"source":{"id":"https://openalex.org/S177378842","display_name":"Electronic Materials Letters","issn_l":"1738-8090","issn":["1738-8090","2093-6788"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","kci-registered","poland-100","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronic Materials Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5017852276","display_name":"Zhi-Wei Zheng","orcid":"https://orcid.org/0000-0002-9725-9566","observed_orcids":["https://orcid.org/0000-0002-9725-9566"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Z. W. Zheng","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China","Chinese Academy of Sciences"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Chinese Academy of Sciences","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5047851031","display_name":"Y. C. Chen","orcid":"https://orcid.org/0009-0001-6549-7885","observed_orcids":["https://orcid.org/0009-0001-6549-7885"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y. C. Chen","raw_affiliation_strings":["Institute of Photonic System, National Chiao Tung University, Hsinchu, 300, Taiwan","National Chiao-Tung University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Photonic System, National Chiao Tung University, Hsinchu, 300, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"National Chiao-Tung University","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5017852276"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"],"apc_list":{"value":3490,"currency":"USD","value_usd":3490},"apc_paid":null,"fwci":0.1622,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.53952067,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"10","issue":"2","first_page":"383","last_page":"385"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7153000235557556,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7153000235557556,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.09769999980926514,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.06019999831914902,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-induction-transistor","display_name":"static induction transistor","score":0.9990000128746033},{"id":"https://openalex.org/keywords/gate-electrode","display_name":"gate electrode","score":0.9919999837875366},{"id":"https://openalex.org/keywords/drain-current","display_name":"drain current","score":0.6959999799728394},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.7570000290870667},{"id":"https://openalex.org/keywords/low-driving-voltage","display_name":"low driving voltage","score":0.7940000295639038},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.699999988079071}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8805392980575562},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.6987335085868835},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6913695335388184},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.6555449366569519},{"id":"https://openalex.org/C158470141","wikidata":"https://www.wikidata.org/wiki/Q7604169","display_name":"Static induction transistor","level":5,"score":0.6471449136734009},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6301896572113037},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5644065737724304},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5360690951347351},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.4499253034591675},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44068247079849243},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.4364219605922699},{"id":"https://openalex.org/C155891486","wikidata":"https://www.wikidata.org/wiki/Q3694418","display_name":"Saturation current","level":3,"score":0.4357033967971802},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.41183188557624817},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17166489362716675},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.1715865433216095},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.05770242214202881},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/s13391-013-3154-7","doi":"https://doi.org/10.1007/s13391-013-3154-7","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s13391-013-3154-7","pdf_url":null,"source":{"id":"https://openalex.org/S177378842","display_name":"Electronic Materials Letters","issn_l":"1738-8090","issn":["1738-8090","2093-6788"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","kci-registered","poland-100","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronic Materials Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1963515687","https://openalex.org/W1966127966","https://openalex.org/W1970845633","https://openalex.org/W1986821476","https://openalex.org/W2001004606","https://openalex.org/W2009874435","https://openalex.org/W2019576773","https://openalex.org/W2026427714","https://openalex.org/W2032221385","https://openalex.org/W2048135807","https://openalex.org/W2066149397","https://openalex.org/W2075271800","https://openalex.org/W2103714775","https://openalex.org/W2110537853","https://openalex.org/W2124776968","https://openalex.org/W2134683456","https://openalex.org/W2146101168"],"related_works":["https://openalex.org/W1985198415","https://openalex.org/W4386692916","https://openalex.org/W2066149397","https://openalex.org/W2555071841","https://openalex.org/W2109067505","https://openalex.org/W2371374110","https://openalex.org/W1996081795","https://openalex.org/W2084954910","https://openalex.org/W2009874435","https://openalex.org/W2026209295"],"abstract_inverted_index":null,"counts_by_year":[{"year":2016,"cited_by_count":1}],"updated_date":"2026-09-09T07:26:56.047234","created_date":"2016-06-24T00:00:00"}