{"id":"https://openalex.org/W1986018632","doi":"https://doi.org/10.1063/1.333806","title":"X-ray diffraction study and electrical characterization of boron-implanted low-pressure chemical vapor deposited polycrystalline silicon layers","display_name":"X-ray diffraction study and electrical characterization of boron-implanted low-pressure chemical vapor deposited polycrystalline silicon layers","publication_year":1984,"publication_date":"1984-11-15","ids":{"openalex":"https://openalex.org/W1986018632","doi":"https://doi.org/10.1063/1.333806","mag":"1986018632"},"language":"en","primary_location":{"id":"doi:10.1063/1.333806","doi":"https://doi.org/10.1063/1.333806","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.333806","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113853732","display_name":"M. Hendriks","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"M. Hendriks","raw_affiliation_strings":["Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111964887","display_name":"Rob Delhez","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"R. Delhez","raw_affiliation_strings":["Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113587058","display_name":"Th. H. de Keijser","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Th. H. de Keijser","raw_affiliation_strings":["Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040543767","display_name":"Sybrand Radelaar","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"S. Radelaar","raw_affiliation_strings":["Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111535099","display_name":"F.H.P.M. Habraken","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210122849","display_name":"Philips (Netherlands)","ror":"https://ror.org/02p2bgp27","country_code":"NL","type":"company","lineage":["https://openalex.org/I4210122849"]},{"id":"https://openalex.org/I4210163196","display_name":"Signify (Netherlands)","ror":"https://ror.org/0532vdr17","country_code":"NL","type":"company","lineage":["https://openalex.org/I4210163196"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"F. H. P. M. Habraken","raw_affiliation_strings":["Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands","institution_ids":["https://openalex.org/I4210122849","https://openalex.org/I4210163196"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038996522","display_name":"A. E. T. Kuiper","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210122849","display_name":"Philips (Netherlands)","ror":"https://ror.org/02p2bgp27","country_code":"NL","type":"company","lineage":["https://openalex.org/I4210122849"]},{"id":"https://openalex.org/I4210163196","display_name":"Signify (Netherlands)","ror":"https://ror.org/0532vdr17","country_code":"NL","type":"company","lineage":["https://openalex.org/I4210163196"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"A. E. T. Kuiper","raw_affiliation_strings":["Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands","institution_ids":["https://openalex.org/I4210122849","https://openalex.org/I4210163196"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112077407","display_name":"P. R. Boudewijn","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210122849","display_name":"Philips (Netherlands)","ror":"https://ror.org/02p2bgp27","country_code":"NL","type":"company","lineage":["https://openalex.org/I4210122849"]},{"id":"https://openalex.org/I4210163196","display_name":"Signify (Netherlands)","ror":"https://ror.org/0532vdr17","country_code":"NL","type":"company","lineage":["https://openalex.org/I4210163196"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"P. R. Boudewijn","raw_affiliation_strings":["Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands","institution_ids":["https://openalex.org/I4210122849","https://openalex.org/I4210163196"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":0.2781,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.45904645,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"56","issue":"10","first_page":"2751","last_page":"2761"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.6830999851226807,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.6830999851226807,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.2687999904155731,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.015200000256299973,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/boron-implantation","display_name":"boron implantation","score":0.9229999780654907},{"id":"https://openalex.org/keywords/polycrystalline-silicon","display_name":"polycrystalline silicon","score":0.9350000023841858},{"id":"https://openalex.org/keywords/low-pressure-chemical-vapor-deposition","display_name":"low-pressure chemical vapor deposition","score":0.9459999799728394},{"id":"https://openalex.org/keywords/dopant-redistribution","display_name":"dopant redistribution","score":0.7429999709129333},{"id":"https://openalex.org/keywords/crystallographic-texture","display_name":"crystallographic texture","score":0.6549999713897705},{"id":"https://openalex.org/keywords/crystallite-size","display_name":"crystallite size","score":0.9819999933242798},{"id":"https://openalex.org/keywords/lattice-parameters","display_name":"lattice parameters","score":0.6660000085830688},{"id":"https://openalex.org/keywords/annealing-temperature","display_name":"annealing temperature","score":0.7179999947547913},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.8500000238418579},{"id":"https://openalex.org/keywords/electrical-resistivity","display_name":"electrical resistivity","score":0.7699999809265137},{"id":"https://openalex.org/keywords/hall-effect","display_name":"Hall effect","score":0.7329999804496765},{"id":"https://openalex.org/keywords/thin-films","display_name":"thin films","score":0.3009999990463257}],"concepts":[{"id":"https://openalex.org/C137637335","wikidata":"https://www.wikidata.org/wiki/Q899604","display_name":"Crystallite","level":2,"score":0.8639631271362305},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7198200225830078},{"id":"https://openalex.org/C2780565262","wikidata":"https://www.wikidata.org/wiki/Q737038","display_name":"Polycrystalline silicon","level":4,"score":0.6377134323120117},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.6104351282119751},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6072274446487427},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5404585003852844},{"id":"https://openalex.org/C501308230","wikidata":"https://www.wikidata.org/wiki/Q618","display_name":"Boron","level":2,"score":0.4346405863761902},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.42012926936149597},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.4015216529369354},{"id":"https://openalex.org/C199289684","wikidata":"https://www.wikidata.org/wiki/Q83353","display_name":"Mineralogy","level":1,"score":0.3306611180305481},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2815919518470764},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1917482614517212},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.18999016284942627},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1529250144958496},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.15207761526107788},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.058772116899490356},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.333806","doi":"https://doi.org/10.1063/1.333806","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.333806","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":36,"referenced_works":["https://openalex.org/W293523308","https://openalex.org/W637079380","https://openalex.org/W1493424511","https://openalex.org/W1970756170","https://openalex.org/W1974085346","https://openalex.org/W1985187644","https://openalex.org/W1989439426","https://openalex.org/W1990244340","https://openalex.org/W1994523365","https://openalex.org/W1994947658","https://openalex.org/W1999361937","https://openalex.org/W1999888080","https://openalex.org/W2004704850","https://openalex.org/W2009238608","https://openalex.org/W2013634243","https://openalex.org/W2023251201","https://openalex.org/W2026088139","https://openalex.org/W2037636275","https://openalex.org/W2038391440","https://openalex.org/W2044489062","https://openalex.org/W2045617844","https://openalex.org/W2052558948","https://openalex.org/W2053747776","https://openalex.org/W2054858723","https://openalex.org/W2061178257","https://openalex.org/W2065028460","https://openalex.org/W2070175293","https://openalex.org/W2076901719","https://openalex.org/W2080240036","https://openalex.org/W2081701162","https://openalex.org/W2085776017","https://openalex.org/W2085829628","https://openalex.org/W2093556155","https://openalex.org/W2121715063","https://openalex.org/W2162643076","https://openalex.org/W2317909330"],"related_works":["https://openalex.org/W2015521991","https://openalex.org/W2044375444","https://openalex.org/W7028315672","https://openalex.org/W1988303458","https://openalex.org/W2018220869","https://openalex.org/W2035770368","https://openalex.org/W3120832366","https://openalex.org/W3147687042","https://openalex.org/W2013099288","https://openalex.org/W1967731314"],"abstract_inverted_index":{"The":[0,41,85,105,122,237,265],"distribution":[1,42],"of":[2,12,26,43,55,63,107,172,223,226,230],"dopant":[3],"atoms":[4,45],"and":[5,8,35,68,75,100,135,161,185,189,201],"the":[6,9,72,80,136,142,155,162,170,211,217,224,228,231,240,244,270,278],"structure":[7],"electrical":[10,96,232],"properties":[11],"low-pressure":[13],"chemical":[14],"vapor":[15],"deposited":[16],"(LPCVD)":[17],"polycrystalline":[18,112],"silicon":[19,113],"layers":[20,213],"were":[21,103],"studied":[22],"as":[23,120],"a":[24,129,182,197,252],"function":[25],"layer":[27,153],"thickness":[28,154],"(0.35\u20132.0":[29],"\u03bcm),":[30],"annealing":[31,191,243],"temperature":[32],"(800\u20131100":[33],"\u00b0C),":[34],"boron":[36,44,109],"implantation":[37],"dose":[38],"(1015\u20131016":[39],"cm\u22122).":[40],"was":[46,83,89,133],"determined":[47,90],"by":[48,91,277],"secondary":[49],"ion":[50],"mass":[51],"spectrometry.":[52],"By":[53],"means":[54],"x-ray":[56],"diffraction,":[57],"information":[58],"about":[59],"(i)":[60],"preferred":[61],"orientation":[62],"crystallites,":[64],"(ii)":[65],"crystallite":[66,208,282],"size":[67,88,171,209,283],"short-range":[69],"strain":[70],"form":[71],"peak":[73,81],"broadening,":[74],"(iii)":[76],"lattice":[77,256],"parameter":[78,257],"from":[79],"position":[82],"obtained.":[84],"lateral":[86],"grain":[87],"transmission":[92],"electron":[93],"microscopy.":[94],"For":[95],"characterization":[97],"Hall-effect":[98],"measurements":[99,102],"resistivity":[101],"performed.":[104],"redistribution":[106],"implanted":[108,212,245],"in":[110,117,167,196,207,239,255,267,281],"LPCVD":[111],"proceeds":[114],"faster":[115],"than":[116,146],"monocrystalline":[118],"silicon,":[119],"expected.":[121],"as-deposited":[123],"films":[124],"exhibit":[125],"an":[126],"anisotropic":[127],"structure:":[128],"\u3008110\u3009":[130,139,156,163,199],"fiber":[131],"texture":[132,157,184,200],"found":[134],"crystallites":[137,147,165,173],"with":[138,148,174,251],"perpendicular":[140],"to":[141,181],"surface":[143],"are":[144],"larger":[145,186],"other":[149,175],"orientations.":[150],"With":[151],"increasing":[152],"becomes":[158],"more":[159],"pronounced":[160,253],"oriented":[164],"increase":[166,206,266,280],"size,":[168],"whereas":[169],"orientations":[176],"slightly":[177],"decreases.":[178],"Annealing":[179],"leads":[180],"weaker":[183,198],"crystallites.":[187,203],"Implantation":[188],"subsequent":[190],"at":[192,247],"800":[193],"\u00b0C":[194,219,249,272],"results":[195],"smaller":[202],"A":[204],"significant":[205,279],"for":[210],"is":[214,234,261],"noted":[215],"after":[216,242,269],"1100":[218,271],"anneal":[220,273],"only.":[221],"Because":[222],"multitude":[225],"parameters":[227],"interpretation":[229],"data":[233],"necessarily":[235],"qualitative.":[236],"minimum":[238],"mobility":[241,268],"samples":[246],"1000":[248],"correlates":[250],"change":[254],"but":[258],"its":[259],"origin":[260],"not":[262],"yet":[263],"understood.":[264],"can":[274],"be":[275],"explained":[276],"mentioned":[284],"above.":[285]},"counts_by_year":[],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}