{"id":"https://openalex.org/W1985608913","doi":"https://doi.org/10.1116/1.4764473","title":"HfxZr1\u2212xO2 compositional control using co-injection atomic layer deposition","display_name":"HfxZr1\u2212xO2 compositional control using co-injection atomic layer deposition","publication_year":2012,"publication_date":"2012-10-30","ids":{"openalex":"https://openalex.org/W1985608913","doi":"https://doi.org/10.1116/1.4764473","mag":"1985608913"},"language":"en","primary_location":{"id":"doi:10.1116/1.4764473","doi":"https://doi.org/10.1116/1.4764473","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.4764473","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5042931698","display_name":"Steven P. Consiglio","orcid":"https://orcid.org/0000-0001-8543-5879","observed_orcids":["https://orcid.org/0000-0001-8543-5879"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Steven Consiglio","raw_affiliation_strings":["TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063843304","display_name":"Kandabara Tapily","orcid":"https://orcid.org/0000-0001-8805-0704","observed_orcids":["https://orcid.org/0000-0001-8805-0704"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kandabara Tapily","raw_affiliation_strings":["TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060825080","display_name":"Robert D. Clark","orcid":"https://orcid.org/0000-0002-8090-1049","observed_orcids":["https://orcid.org/0000-0002-8090-1049"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Robert D. Clark","raw_affiliation_strings":["TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108627031","display_name":"Genji Nakamura","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Genji Nakamura","raw_affiliation_strings":["TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040404739","display_name":"Cory S. Wajda","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Cory S. Wajda","raw_affiliation_strings":["TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5020029437","display_name":"Gert J. Leusink","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Gert J. Leusink","raw_affiliation_strings":["TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center , America, LLC, 255 Fuller Road, Albany, New York 12203","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.6002,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.70459562,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"31","issue":"1","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.0008999999845400453,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hafnium-zirconium-oxide","display_name":"hafnium zirconium oxide","score":0.8859999775886536},{"id":"https://openalex.org/keywords/composition-control","display_name":"composition control","score":0.7099999785423279},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"gate dielectric","score":0.7789999842643738},{"id":"https://openalex.org/keywords/high-k-dielectrics","display_name":"high-k dielectrics","score":0.8830000162124634},{"id":"https://openalex.org/keywords/chemisorption","display_name":"chemisorption","score":0.6790000200271606},{"id":"https://openalex.org/keywords/mos-capacitors","display_name":"MOS capacitors","score":0.8460000157356262},{"id":"https://openalex.org/keywords/within-wafer-uniformity","display_name":"within-wafer uniformity","score":0.8809999823570251},{"id":"https://openalex.org/keywords/dielectric-constant","display_name":"dielectric constant","score":0.5870000123977661}],"concepts":[{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.7919449210166931},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7224115133285522},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6751573085784912},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5032479166984558},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.4871056079864502},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.47925782203674316},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.47821900248527527},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.46951669454574585},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.46335721015930176},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.41639846563339233},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.4148212969303131},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.38960254192352295},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.32403504848480225},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.31771644949913025},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.20294994115829468},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.18398389220237732},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18016991019248962},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.11791956424713135},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.4764473","doi":"https://doi.org/10.1116/1.4764473","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.4764473","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1567996011","https://openalex.org/W1968406658","https://openalex.org/W1975862404","https://openalex.org/W1977741730","https://openalex.org/W1984503675","https://openalex.org/W1987119064","https://openalex.org/W1987665867","https://openalex.org/W1988644795","https://openalex.org/W1989131024","https://openalex.org/W2041246757","https://openalex.org/W2050002217","https://openalex.org/W2053550864","https://openalex.org/W2071989647","https://openalex.org/W2085024863","https://openalex.org/W2086126257","https://openalex.org/W2108159416","https://openalex.org/W2111138496","https://openalex.org/W2112554416","https://openalex.org/W2123181442","https://openalex.org/W2314133685","https://openalex.org/W2322142754","https://openalex.org/W2324199244"],"related_works":["https://openalex.org/W2322142754","https://openalex.org/W4220834766","https://openalex.org/W7221611210","https://openalex.org/W3000469792","https://openalex.org/W2055078489","https://openalex.org/W2089667642","https://openalex.org/W2131254411","https://openalex.org/W2039039661","https://openalex.org/W2005826182","https://openalex.org/W2625955716"],"abstract_inverted_index":{"As":[0],"a":[1,19,41],"replacement":[2],"for":[3,92],"SiO2":[4],"based":[5],"gate":[6],"dielectrics,":[7],"HfO2":[8,25,98],"with":[9,83,96],"an":[10],"admixture":[11],"of":[12,28,30,46,127,152],"ZrO2":[13,100],"has":[14],"the":[15,37,63,69,74,89,114,119,145],"potential":[16],"to":[17,43,106,130],"provide":[18],"higher":[20],"dielectric":[21],"constant":[22],"than":[23],"pure":[24],"by":[26,50,54],"means":[27,42],"stabilization":[29],"higher-k":[31],"phases.":[32],"Accordingly,":[33],"in":[34,139],"this":[35],"study":[36],"authors":[38,133],"have":[39,134],"pursued":[40],"control":[44],"composition":[45,111],"HfxZr1\u2212xO2":[47,93],"films":[48,138],"grown":[49],"atomic":[51],"layer":[52],"deposition":[53],"simultaneously":[55],"flowing":[56],"Hf":[57,76],"and":[58,67,77,81,99,103,109,143,148],"Zr":[59,78],"metal":[60],"precursors":[61],"during":[62],"precursor":[64],"exposure":[65],"step":[66],"varying":[68],"molar":[70],"flow":[71],"ratio.":[72],"Using":[73],"tetrakis(ethylmethylamino)":[75],"precursors,":[79],"TEMAH":[80],"TEMAZ,":[82],"either":[84],"H2O":[85],"or":[86],"O3":[87],"co-reactants,":[88],"co-injection":[90,115],"approach":[91],"was":[94,104],"compared":[95,129],"alternating":[97],"growth":[101],"cycles":[102],"observed":[105],"allow":[107],"uniform":[108],"tunable":[110],"control.":[112],"For":[113],"process,":[116],"deviation":[117],"from":[118,155],"cycle":[120],"ratio":[121],"trendline":[122],"suggests":[123],"more":[124],"efficient":[125],"chemisorption":[126],"TEMAZ":[128],"TEMAH.":[131],"The":[132],"also":[135],"evaluated":[136],"these":[137],"metal\u2013oxide\u2013semiconductor":[140],"capacitor":[141],"structures":[142],"verified":[144],"electrical":[146],"equivalence":[147],"similar":[149],"within-wafer":[150],"distributions":[151],"Hf0.2Zr0.8O2":[153],"obtained":[154],"both":[156],"processing":[157],"schemes.":[158]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2026-10-17T09:40:24.721904","created_date":"2016-06-24T00:00:00"}