{"id":"https://openalex.org/W1985391807","doi":"https://doi.org/10.1109/irws.2006.305212","title":"Impact of Hot Carrier Degradation Modes on I/O nMOSFETS Aging Prediction","display_name":"Impact of Hot Carrier Degradation Modes on I/O nMOSFETS Aging Prediction","publication_year":2006,"publication_date":"2006-10-01","ids":{"openalex":"https://openalex.org/W1985391807","doi":"https://doi.org/10.1109/irws.2006.305212","mag":"1985391807"},"language":"en","primary_location":{"id":"doi:10.1109/irws.2006.305212","doi":"https://doi.org/10.1109/irws.2006.305212","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irws.2006.305212","pdf_url":null,"source":{"id":"https://openalex.org/S4210230073","display_name":"IEEE International Integrated Reliability Workshop final report","issn_l":"1930-8841","issn":["1930-8841","2374-8036"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2006 IEEE International Integrated Reliability Workshop Final Report","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5057926730","display_name":"Chloe Guerin","orcid":"https://orcid.org/0000-0002-0148-9966","observed_orcids":["https://orcid.org/0000-0002-0148-9966"]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Guerin","raw_affiliation_strings":["STMicroelectronics, France","STMicroelectronics, Crolles2 alliance, 850 rue Jean Monnet, 38926 Crolles, France. e-mail: chloe.guerin@st.com, ph. +33.4.38.92.32.27"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics, Crolles2 alliance, 850 rue Jean Monnet, 38926 Crolles, France. e-mail: chloe.guerin@st.com, ph. +33.4.38.92.32.27","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109198256","display_name":"V. Huard","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"V. Huard","raw_affiliation_strings":["NXP Semiconductors, Crolles, France","NXP Semiconductors, Crolles2 alliance, 850 rue Jean Monnet, 38926 Crolles, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Crolles, France","institution_ids":[]},{"raw_affiliation_string":"NXP Semiconductors, Crolles2 alliance, 850 rue Jean Monnet, 38926 Crolles, France","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104439073","display_name":"A. Bravaix","orcid":"https://orcid.org/0000-0002-2308-3537","observed_orcids":["https://orcid.org/0000-0002-2308-3537"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I3132279224","display_name":"Institut Sup\u00e9rieur de l'\u00c9lectronique et du Num\u00e9rique","ror":"https://ror.org/017h2rd72","country_code":"FR","type":"education","lineage":["https://openalex.org/I3132279224"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A. Bravaix","raw_affiliation_strings":["L2MP-ISEN, Maison des Technologies, UMR CNRS, Toulon, France","L2MP-ISEN, UMR CNRS 6137, Maison des Technologies, place G. Pompidou, 83000 Toulon, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"L2MP-ISEN, Maison des Technologies, UMR CNRS, Toulon, France","institution_ids":["https://openalex.org/I1294671590"]},{"raw_affiliation_string":"L2MP-ISEN, UMR CNRS 6137, Maison des Technologies, place G. Pompidou, 83000 Toulon, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I3132279224"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111342387","display_name":"M. Denais","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"M. Denais","raw_affiliation_strings":["STMicroelectronics, France","STMicroelectronics, Crolles2 Alliance, 850 rue Jean Monnet, 38926 Crolles, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics, Crolles2 Alliance, 850 rue Jean Monnet, 38926 Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.5826,"has_fulltext":false,"cited_by_count":17,"citation_normalized_percentile":{"value":0.79184131,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"63","last_page":"67"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8119999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8119999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.05939999967813492,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.037700001150369644,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/n-mosfet","display_name":"nMOSFET","score":0.9440000057220459},{"id":"https://openalex.org/keywords/lifetime-extrapolation","display_name":"lifetime extrapolation","score":0.7519999742507935},{"id":"https://openalex.org/keywords/gate-voltage-dependence","display_name":"gate voltage dependence","score":0.7390000224113464},{"id":"https://openalex.org/keywords/interface-states","display_name":"interface states","score":0.6349999904632568},{"id":"https://openalex.org/keywords/charge-pumping","display_name":"charge pumping","score":0.7919999957084656}],"concepts":[{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.7201762795448303},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.43361160159111023},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40062570571899414},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.38348639011383057},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38195928931236267},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3535432815551758},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.330274760723114},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3253386318683624},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2794807553291321},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17266911268234253}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irws.2006.305212","doi":"https://doi.org/10.1109/irws.2006.305212","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irws.2006.305212","pdf_url":null,"source":{"id":"https://openalex.org/S4210230073","display_name":"IEEE International Integrated Reliability Workshop final report","issn_l":"1930-8841","issn":["1930-8841","2374-8036"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2006 IEEE International Integrated Reliability Workshop Final Report","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1592943953","https://openalex.org/W1979006344","https://openalex.org/W2031517912","https://openalex.org/W2078482863","https://openalex.org/W2094976605","https://openalex.org/W2100766508","https://openalex.org/W2131483513","https://openalex.org/W2150050345","https://openalex.org/W2896025504"],"related_works":["https://openalex.org/W2087017833","https://openalex.org/W2053889244","https://openalex.org/W1964497131","https://openalex.org/W2087640475","https://openalex.org/W2345683463","https://openalex.org/W1592943953","https://openalex.org/W2118620304","https://openalex.org/W2168813654","https://openalex.org/W2160318243","https://openalex.org/W2319164209"],"abstract_inverted_index":{"This":[0,56],"work":[1,57],"shows":[2],"that":[3],"channel":[4],"hot":[5],"carrier":[6],"(CHC)":[7],"in":[8,11,74],"nMOSFET":[9],"consists":[10],"two":[12],"different":[13],"regimes":[14],"depending":[15,53],"on":[16,54,59,69,109,112],"the":[17,47,60,66,70,77,100],"gate":[18],"voltage":[19,94],"(Vg).":[20],"At":[21,44],"low":[22],"Vg,":[23,46],"a":[24],"simple":[25],"way":[26],"to":[27,76,98],"extrapolate":[28],"lifetime":[29,72],"at":[30],"nominal":[31],"bias":[32],"conditions":[33,40],"from":[34],"data":[35],"get":[36],"under":[37],"accelerated":[38],"stress":[39],"will":[41],"be":[42],"detailed.":[43],"high":[45],"second":[48],"degradation":[49,63,79,116],"mode":[50],"becomes":[51],"worse":[52],"Vd.":[55],"focuses":[58],"worst":[61],"case":[62],"determination":[64],"and":[65,83,90],"model":[67],"effects":[68],"device":[71],"prediction":[73],"relation":[75],"CHC":[78],"mechanisms.":[80],"A":[81],"combined":[82],"complementary":[84],"use":[85],"of":[86],"charge":[87],"pumping":[88],"(CP)":[89],"direct":[91],"current":[92,93],"(DCIV)":[95],"allows":[96],"us":[97],"obtain":[99],"spatial":[101],"interface":[102],"traps":[103],"(Nit)":[104],"localization":[105],"giving":[106],"more":[107],"information":[108],"Nit":[110],"impact":[111],"linear":[113],"transistor":[114],"parameters":[115]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}